SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 600 V Tc = 25 °C 70 A Tc = 75 °C 51 A 50 A ICnom ICRM SEMITRANS® 2 Superfast NPT-IGBT Modules ICRM = 2xICnom 100 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 75 A Tc = 80 °C 45 A 50 A 100 A -40 ... 150 °C VGES tpsc VCC = 300 V VGE ≤ 20 V VCES ≤ 600 V Tj = 125 °C Tj Inverse diode IF SKM50GB063D IFnom Target Data IFRM IFRM = 2xIFnom Features IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj • NPT = non punch-through IGBT technology • High short circuit capability, self limiting to 6 x IC • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate A Module It(RMS) Tterminal < 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 200 A -40 ... 125 °C 2500 V Characteristics Typical Applications* • Switched mode power supplies • UPS • Three phase inverters for servo / AC motor speed control Symbol Conditions min. typ. max. Unit Tj = 25 °C 2.1 2.5 V Tj = 125 °C 2.4 2.8 V VCE0 Tj = 25 °C 1.05 1.3 V Tj = 125 °C 1 1.2 V rCE Tj = 25 °C 21.0 24.0 mΩ 28.0 32.0 mΩ 5.5 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 2.2 IGBT VCE(sat) IC = 50 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 1 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 20 V RGint Tj = 25 °C VCC = 300 V IC = 50 A VGE = ±15 V RG on = 22 Ω RG off = 22 Ω td(on) tr Eon Tj = 125 °C 4.5 mA nF f = 1 MHz f = 1 MHz nF 0.2 nF nC Ω Tj = 125 °C 50 ns Tj = 125 °C 40 ns Tj = 125 °C 2.5 mJ Tj = 125 °C 300 ns tf Tj = 125 °C 30 ns Eoff Tj = 125 °C 1.8 mJ td(off) Rth(j-c) per IGBT 0.5 K/W GB © by SEMIKRON Rev. 2 – 22.04.2010 1 SKM50GB063D Characteristics Symbol SEMITRANS® 2 rF IRRM Qrr Superfast NPT-IGBT Modules Conditions Inverse diode VF = VEC IF = 50 A VGE = 0 V chip VF0 Err Rth(j-c) IF = 50 A di/dtoff = 50 A/µs VGE = ±15 V VCC = 300 V per diode min. typ. max. Unit Tj = 25 °C 1.35 1.60 V Tj = 125 °C 1.35 1.60 V Tj = 25 °C 1.05 1.2 V Tj = 125 °C 0.9 1 V Tj = 25 °C 6.0 8.0 mΩ Tj = 125 °C 9.0 12.0 mΩ Tj = 125 °C 31 A Tj = 125 °C 3.2 µC Tj = 125 °C 0.48 mJ 1 K/W Module SKM50GB063D LCE RCC'+EE' Target Data Features • NPT = non punch-through IGBT technology • High short circuit capability, self limiting to 6 x IC • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate 30 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt nH TC = 25 °C 0.65 mΩ TC = 125 °C 1 mΩ 0.04 to terminals M5 0.05 K/W 3 5 Nm 2.5 5 Nm Nm w 160 g Typical Applications* • Switched mode power supplies • UPS • Three phase inverters for servo / AC motor speed control GB 2 Rev. 2 – 22.04.2010 © by SEMIKRON SKM50GB063D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 22.04.2010 3 SKM50GB063D Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 2 – 22.04.2010 © by SEMIKRON SKM50GB063D SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 2 – 22.04.2010 5