V23990-P723-F10/F14-PM preliminary datasheet fast PACK 0 H 2nd gen with capacitor 600V / 60A Features flow 0 housing Ultra fast switching frequency of up to 250kHz AlNi substrate for higher performance Clip-in PCB mounting DC link capacitors for reduction of inductance and losses Target Applications Schematic Power Generation Welding Types V23990-P723-F10 without NTC V23990-P723-F14 with NTC P723-F14 P723-F10 Maximum Ratings Parameter Condition Symbol Value Unit 600 V 43 65 A 180 A 133 266 W ±20 V 10 Ps 150°C °C Transistor H-bridge (IGBT) Collector-emitter break down voltage DC collector current VCE IC Tj=Tjmax Repetitive peak collector current Icpuls tp limited by Tjmax Power dissipation per IGBT Ptot Tj=Tjmax Gate-emitter peak voltage VGE SC withstand time* tSC Maximum junction temperature Tj150°C VGE=15V VCC=360V Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C * It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits Copyright by Vincotech 1 Revision: 1 V23990-P723-F10/F14-PM preliminary datasheet Maximum Ratings Parameter Condition Symbol Value Unit 48 60 A 150 A 72 144 W 150°C °C 500 V Diode H-bridge DC forward current IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum junction temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Tjmax DC Link Capacitor Maximum DC voltage VMAX Tc=25°C Thermal properties Storage temperature Tstg -40…+125 °C Operation temperature Top -40…+125 °C 4000 Vdc Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation properties Insulation voltage Copyright by Vincotech Vis t=1min 2 Revision: 1 V23990-P723-F10/F14-PM preliminary datasheet Characteristic Values Parameter Conditions Symbol VGE(V) or VGS(V) Vr(V) or VCE(V) or VDS(V) Value IC(A) or IF(A) or ID(A) T(C°) Unit Min Typ Max 3 4 5 2,84 3,49 3,7 Transistor H-bridge (IGBT) Gate emitter threshold voltage Collector-emitter saturation voltage VGE(th) 0,0006 VGE=VCE VCE(sat) 15 60 Collector-emitter cut-off ICES 0 600 Gate-emitter leakage current IGES 30 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time** Turn-off delay time Fall time ** tr td(off) tf Turn-on energy loss per pulse** Eon Turn-off energy loss per pulse** Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Rgoff=2 Rgon=4 f=1MHz 15/0 400 0 60 25 15 480 60 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V V 0,35 mA 300 - nA Ohm ns 18,2 ns 17 ns 210 ns 12,7 mWs 1,35 mWs 0,9 3 nF 0,3 nF 0,18 nF 377,3 Thermal grease thickness50um = 0,61 W/mK nC 0,53 K/W 0,26 K/W **Values are measured without built-in DC link capacitors due to measurement restrictions Diode H-bridge Diode forward voltage VF Peak reverse recovery current IRM Reverse recovery time Reverse recovery charge trr 50 Rgon=4 15 dI0/dt=4988 A/us 400 Qrr Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 60 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,56 1,53 2,3 V A 98,65 ns 124,9 Thermal grease thickness50um = 0,61 W/mK 5,56 PC 0,98 K/W 0,49 K/W Capacitor C value C 400 540 680 nFN 22 23,1 kOhm NTC Thermistor Rated resistance R25 Deviation of R100 DR/R Power dissipation given Epcos-Type B-value Copyright by Vincotech Tj=25°C R100=1503 P B(25/100) Tol. ±3% 3 20,9 Tc=100°C 2,9 %/K Tj=25°C 210 mW Tj=25°C 3980 K Revision: 1 V23990-P723-F10/F14-PM preliminary datasheet Package Outline and Pinout Outline Pinout Copyright by Vincotech 4 Revision: 1 V23990-P723-F10/F14-PM preliminary datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER Tyco Electronics reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tyco Electronics does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Tyco Electronics products are not authorised for use as critical components in life support devices or systems without the express written approval of Tyco Electronics As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright by Vincotech 5 Revision: 1