ROHM RB541XN

Data Sheet
Schottky Barrier Diode
RB541XN
Dimensions (Unit : mm)
Applications
Rectify small power
Land size figure (Unit : mm)
0.65
2.0±0.2
各リードとも
Each
lead has same dimension
同寸法
0.25± 0.1
0.15±0.05
0.05
1.6
(2)
3)High reliability
0.9
(1)
(4)
2.1±0.1
(5)
1.25±0.1
Features
1)Small mold type. (UMD6)
2)Low VF
(6)
0.35
0.1Min
0～0.1
(3)
UMD6
0.65
0.65
Construction
Silicon epitaxial planer
0.65
0.7
1.3±0.1
0.9±0.1
Structure
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
Taping dimensions (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VR
Reverse voltage (DC)
Average rectified forward voltage (*1)
Io
IFSM
Forward voltage surge peak (60Hz・1cyc) (*2)
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode:1/3Io
(*2) Rating of per diode
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
Limits
2.4±0.1
8.0±0.2
5.5±0.2
1.15±0.1
Unit
V
mA
mA
C
C
30
100
500
125
40 to 125
Min.
φ1.1±0.1
4.0±0.1
2.2±0.1
0～0.5
2.45±0.1
2.4±0.1
3.5±0.05
1.75±0.1
4.0±0.1
Typ.
Max.
Unit
-
-
0.35
V
-
-
10
μA
Conditions
IF=10mA
VR=10V
*Rating of per diode
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1/4
2011.11 - Rev.A
Data Sheet
RB541XN
1000
10000
Ta=125°C
Ta=125°C
1000
Ta=75°C
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(mA)
100
10
1
Ta=25°C
0.1
0.01
Ta=75°C
100
Ta=25°C
10
1
Ta=-25°C
0.1
Ta=-25°C
0.001
0.01
0
100
200
300
400
500
600
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
20
100
300
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
Ta=25°C
IF=10mA
n=30pcs
290
280
270
AVE:270.2mV
260
1
250
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
30
REVERSE CURRENT:VR(mA)
25
20
15
10
5
Ta=25°C
f=1MHz
VR=0V
n=10pcs
19
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25°C
VR=10V
n=30pcs
18
17
16
AVE:17.34pF
15
14
13
12
AVE:2.037mA
11
10
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
Data Sheet
RB541XN
20
14
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
15
8.3ms
10
AVE:3.90A
5
0
AVE:13.0ns
10
8
6
4
2
0
trr DISPERSION MAP
IFSM DISPERSION MAP
10
10
IFSM
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25°C
IF=IR=100mA
Irr=0.1IR
12
8.3ms
1cyc
5
0
t
5
0
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
1000
On glass-epoxy substrate
D.C.
0.08
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
100
Rth(j-c)
10
D=1/2
Sin(θ＝180)
0.06
0.04
0.02
1
0.001
0
0.01
0.1
1
10
TIME:(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
0
1000
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
3/4
2011.11 - Rev.A
Data Sheet
RB541XN
0.06
0.2
0.05
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D.C.
REVERSE POWER
DISSIPATION:PR (w)
D.C.
0.04
D=1/2
0.03
Sin(θ＝180)
0.02
0.15
D=1/2
0.1
Sin(θ＝180)
0.05
0.01
0
0
0
10
20
30
0
REVERSE VOLTAGE：VR(V)
VR-PR CHARACTERISTICS
50
75
100
125
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
0.2
30
D.C.
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
25
0.15
D=1/2
0.1
Sin(θ＝180)
0.05
20
15
AVE:9.50kV
10
AVE:2.80kV
5
0
0
0
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.11 - Rev.A
Notice
Notes
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R1120A