Data Sheet 4V Drive Nch MOSFET RSJ650N10 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High power package. 3) 4V drive. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application Switching Packaging specifications Package Code Basic ordering unit (pieces) RSJ650N10 Type Inner circuit Taping TL 1000 ∗1 ∗2 (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VGSS ID *3 IDP *1 IS *3 ISP PD *1 Limits Unit 100 20 65 V V A 130 65 130 A A A 100 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit Rth (ch-c)* 1.25 C / W *2 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 PW 10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Thermal resistance Parameter Channel to Case * T C=25°C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.06 - Rev.A Data Sheet RSJ650N10 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Conditions VGS=20V, VDS=0V 100 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=100V, VGS=0V VGS (th) 1 - 2.5 V Static drain-source on-state resistance * RDS (on) - 6.5 9.1 - 7 9.8 Forward transfer admittance l Yfs l* 45 - - S VDS=10V, ID=32.5A Input capacitance Ciss - 10780 - pF VDS=25V Output capacitance Coss - 785 - pF VGS=0V Reverse transfer capacitance Crss - 560 - pF f=1MHz Turn-on delay time td(on)* - 45 - ns VDD 50V, I D=32.5A tr * - 170 - ns VGS=10V td(off)* - 640 - ns RL=1.54 tf * - 480 - ns RG=10 Total gate charge Qg * - 260 - nC VDD 50V, I D=32.5A Gate-source charge Qgs * Qgd * - 24 60 - nC nC VGS=10V Gate-drain charge Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Rise time Turn-off delay time Fall time m VDS=10V, ID=1mA ID=32.5A, VGS=10V ID=32.5A, VGS=4V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit Conditions V Is=65A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A Data Sheet RSJ650N10 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 50 50 VGS=10.0V VGS=3.0V VGS=4.5V VGS=10.0V VGS=4.0V 40 VGS=4.5V 40 VGS=2.5V 30 VGS=4.0V VGS=3.0V Drain Current : ID [A] Drain Current : ID [A] VGS=2.8V 20 10 VGS=2.8V VGS=2.5V 30 20 10 Ta=25°C pulsed Ta=25°C pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C pulsed VGS=4.0V VGS=10V 10 1 0.01 0.1 1 10 10 1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Forward Transfer Admittance vs. Drain Current 1000 100 VGS=4V pulsed VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Forward Transfer Admittance Yfs [S] Static Drain-Source On-State Resistance RDS(on) [mW] 6 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Static Drain-Source On-State Resistance RDS(on) [mW] 4 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 0.01 0.1 1 10 0.01 0.01 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] 3/6 2011.06 - Rev.A Data Sheet RSJ650N10 Fig.7 Typical Transfer Characteristics Fig.8 Source Current vs. Source-Drain Voltage 100 100 VGS=0V pulsed VDS=10V pulsed 10 Source Current : Is [A] Drain Currnt : ID [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 20 100000 VDD≒50V VGS=10V RG=10W Ta=25°C Pulsed tf 10000 15 ID=50A Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C pulsed ID=32.5A 10 td(off) 1000 100 5 td(on) 10 tr 1 0 0 2 4 6 8 0.01 10 0.1 1 10 100 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics 100000 10 Ta=25°C VDD=50V ID=32.5A Pulsed Ciss 10000 Capacitance : C [pF] 8 Gate-Source Voltage : VGS [V] 2.0 6 4 1000 Coss Crss 100 2 Ta=25°C f=1MHz VGS=0V 10 0 0 50 100 150 200 250 0.01 300 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 4/6 2011.06 - Rev.A Data Sheet RSJ650N10 Fig.14 Maximum Safe Operating Area Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width 1000 Ta=25°C Single Pulse Operation in this area is limited by RDS(on) (VGS = 10V) 1 100 Drain Current : ID [ A ] Normalized Transient Thermal Resistance : r (t) 10 0.1 0.01 0.001 Mounted on epoxy board. (25mm × 27mm × 0.8mm) Rth(ch-a)=70.2°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.00001 0.0001 10 PW = 300us PW = 1ms 1 PW = 10ms PW = 1s Ta=25°C Single Pulse Mounted on epoxy board. (25mm × 27mm × 0.8mm) 0.1 0.01 0.001 0.01 0.1 1 10 100 1000 0.1 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 100 1000 Drain-Source Voltage : VDS [ V ] 5/6 2011.06 - Rev.A Data Sheet RSJ650N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A