Data Sheet 10V Drive Nch MOSFET RSJ400N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ400N06 Inner circuit Taping TL 1000 ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Symbol Limits Unit VDSS 60 20 V V Continuous VGSS ID 40 A Pulsed Continuous IDP IS *1 80 40 A A Pulsed ISP PD *1 80 50 A W Tch Tstg 150 55to150 C C Symbol Rth (ch-c) * Limits 2.5 Unit C / W Power dissipation Channel temperature Range of storage temperature *2 *1 Pw10s, Duty cycle1% *2 Tc=25C Thermal resistance Parameter Channel to Case * T c=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A Data Sheet RSJ400N06 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Conditions VGS=20V, VDS=0V 60 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=60V, VGS=0V VGS (th) 1.0 - 3.0 V VDS=10V, ID=1mA RDS (on)* - 11 16 l Yfs l* 14 - - S ID=20A, VDS=10V m ID=40A, VGS=10V Input capacitance Ciss - 2400 - pF VDS=10V Output capacitance Coss - 490 - pF VGS=0V Reverse transfer capacitance Crss - 250 - pF f=1MHz Turn-on delay time td(on) * - 20 - ns ID=20A, VDD 30V tr * - 60 - ns VGS=10V td(off) * - 90 - ns RL=1.5 * - 140 - ns RG=10 Qg * - 52 - nC VDD 30V Gate-source charge Qgs * Gate-drain charge Qgd * - 8 15 - nC nC ID=40A, VGS=10V Rise time Turn-off delay time Fall time tf Total gate charge *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=40A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A Data Sheet RSJ400N06 Electrical characteristic curves (Ta=25C) Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.1 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Ta=25°C VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 10 1 0.01 0.1 1 10 10 1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Drain Current : ID [A] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=4.5V pulsed VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 Drain Current : ID [A] 10 1 0.01 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 100 0.1 Drain Current : ID [A] 1 10 100 Drain Current : ID [A] Fig.5 Forward Transfer Admittance vs. Drain Current Fig.6 Typical Transfer Characteristics 100 100 VDS=10V pulsed VDS=10V pulsed 10 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.1 0.0001 0.01 0.01 0.00001 0.1 1 10 0.0 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Drain Current : ID [A] 3/5 2011.09 - Rev.A Data Sheet RSJ400N06 Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.7 Source Current vs. Source-Drain Voltage 100 50 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed Source Current : Is [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 Ta=25°C pulsed 40 ID=20A 30 ID=40A 20 10 0 0.0001 0.0 0.5 1.0 0 1.5 2 4 6 Source-Drain Voltage : VSD [V] Fig.9 Switching Characteristics VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed 14 16 18 20 tf td(off) 100 td(on) 10 55 60 Ta=25°C VDD=30V ID=40A Pulsed 8 Gate-Source Voltage : VGS [V] Switching Time : t [ns] 12 10 1000 tr 6 4 2 1 0 0.01 0.1 1 10 100 0 5 10 15 Drain Current : ID [A] 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width 100000 10 Ta=25°C f=1MHz VGS=0V Normalized Transient Thermal Resistance : r（t） Capacitance : C [pF] 10 Fig.10 Dynamic Input Characteristics 10000 10000 8 Gate-Source Voltage : VGS [V] Ciss 1000 Coss 100 Crss 10 1 0.01 0.1 1 10 1 0.1 0.01 Rth(ch-c)=2.5°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.001 0.0001 100 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Tc=25°C Single Pulse 4/5 2011.09 - Rev.A Data Sheet RSJ400N06 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. 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