Si3440DV Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • TrenchFET® Power MOSFET • PWM Optimized for Fast Switching In Small Footprint • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch for Low Power DC/DC Converters (1, 2, 5, 6) D TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S Ordering Information: Si3440DV-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 175 °C)a TA = 85 °C ID Single Avalanche Current L = 0.1 mH Single Avalanche Energy (Duty Cycle ≤ 1 %) a 1.5 1.2 0.8 Continuous Source Current (Diode Conduction) Maximum Power Dissipationa TA = 25 °C TA = 85 °C 6 IAS 4 EAS 0.8 IS PD A mJ 1.7 1.0 2.0 1.14 1.0 0.59 TJ, Tstg Operating Junction and Storage Temperature Range V 1.1 IDM Pulsed Drain Current Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72380 S-82114-Rev. C, 08-Sep-08 www.vishay.com 1 Si3440DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 2 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 85 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea 4 ± 100 4 µA A VGS = 10 V, ID = 1.5 A 0.310 0.375 VGS = 6.0 V, ID = 1.4 A 0.330 0.400 gfs VDS = 15 V, ID = 1.5 A 4.1 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 5.4 8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 75 V, VGS = 10 V, ID = 1.5 A f = 1 MHz 4 td(on) Turn-On Delay Time VDD = 75 V, RL = 75 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.1 1.9 IF = 1.7 A, dI/dt = 100 A/µs 9 15 8 15 10 15 20 30 15 25 40 60 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 4.0 VGS = 10 thru 5 V 3.5 3.5 3.0 I D - Drain Current (A) I D - Drain Current (A) 3.0 2.5 2.0 1.5 1.0 2.5 2.0 1.5 1.0 4V 25 °C 0.5 0.5 3V 0.0 0.0 www.vishay.com 2 TC = 125 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 55 °C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Document Number: 72380 S-82114-Rev. C, 08-Sep-08 Si3440DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 320 Ciss 0.4 240 VGS = 6.0 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 0.3 VGS = 10 V 0.2 160 80 Crss 0.1 0.0 0 0 1 2 3 0 4 10 20 ID - Drain Current (A) 30 40 50 60 70 80 125 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.5 VGS = 10 V ID = 1.5 A VDS = 75 V ID = 1.5 A 8 6 4 2.0 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) Coss 1.5 1.0 2 0.5 - 50 0 0 1 2 3 4 5 6 0 25 50 75 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 1.0 TJ = 150 °C TJ = 25 °C 1 0.0 - 25 0.8 ID = 1.5 A 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72380 S-82114-Rev. C, 08-Sep-08 10 www.vishay.com 3 Si3440DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 30 25 ID = 250 µA 20 Power (W) VGS(th) Variance (V) 0.4 0.0 - 0.4 15 10 - 0.8 5 - 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 1 0.1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 10 IDM Limited Limited by R DS(on)* P(t) = 0.0001 I D - Drain Current (A) 1 P(t) = 0.001 0.1 0.01 ID(on) Limited P(t) = 0.01 TA = 25 °C Single Pulse P(t) = 0.1 P(t) = 1 P(t) = 10 DC BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72380 S-82114-Rev. C, 08-Sep-08 Si3440DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72380. Document Number: 72380 S-82114-Rev. C, 08-Sep-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1