2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z (Previous ADE-208-847 (Z)) Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting Outline UPAK D 2 3 1 3 1 G 4 2,4 S Note: 1. Gate 2. Source 3. Drain 4. Source Marking is “JX“. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse) Note1 Pch Note2 Tch Tstg 17 ±10 0.3 0.75 5 150 –45 to +150 V V A A W °C °C Notes: 1. PW < 1sec, Tch < 150°C 2. Value at Tc = 25°C Rev.2.00, Apr.14.2004, page 1 of 4 2SK3391 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power IDSS — — 10 µA VDS = 13.7 V, VGS = 0 IGSS VGS(off) Ciss Coss Pout — 2.3 — — 1.6 — — 10 3.5 — ±5 3.1 — — — µA V pF pF W Added Efficiency ηadd 58 — — % VGS = ±10 V, VDS = 0 ID = 1 mA, VDS = 13.7 V VGS = 5 V, VDS = 0, f = 1 MHz VDS = 13.7 V, VGS = 0, f = 1 MHz VDS = 13.7 V, IDO = 0.15 A f = 836 MHz, Pin = 25.1 mW VDS = 13.7 V, IDO = 0.15 A f = 836 MHz, Pin = 25.1 mW Maximum Channel Power Dissipation Curve Typical Output Characteristics 1.5 ID 6 4 2 50 100 150 Case Temperature 1 6V 0.5 5V VGS = 4 V 0 200 Tc (°C) 0.8 8 VDS 10 (V) Tc = 75°C 25°C - 25°C ID 0.4 0.2 VDS = 13.7 V Pulse Test 2 3 4 5 Gate to Source Voltage Rev.2.00, Apr.14.2004, page 2 of 4 6 VGS 7 (V) Forward Transfer Admittance |yfs| (S) 1 0.6 0.0 2 4 6 Drain to Source Voltage Forward Transfer Admittance vs. Drain Current Typical Transfer Characteristics (A) 7V Pulse Test 0 Drain Current 10 V 8V (A) 8 Drain Current Channel Power Dissipation Pch (W) Main Characteristics 0.3 Tc = - 25°C 0.1 25°C 0.03 75°C 0.01 0.003 VDS = 13.7 V Pulse Test 0.001 0.001 0.003 0.01 0.03 0.1 Drain Current ID (A) 0.3 1 Drain to Source Saturation Voltage vs. Drain Current 1 75°C 0.1 25°C 0.03 Tc = - 25°C 0.003 VGS = 10 V Pulse Test 0.001 0.01 0.03 0.1 0.3 1 3 Drain Current ID (A) 10 3.2 10 mA 2.8 1 mA ID = 0.1 2.4 2.0 VDS = 13.7 V 1.6 - 25 Output Capacitance Coss (pF) 10 9.5 9 VDS = 0 f = 1 MHz -6 -2 2 6 75 100 125 Ta (°C) VGS = 0 f = 1 MHz 30 10 3 1 0.1 10 Reverse Transfer Capacitance vs. Drain to Gate Voltage 3 1 3 10 30 (V) Output Power, Added Efficiency vs. Input Power 2.5 10 VGS = 0 f = 1 MHz 0.3 Drain to Source Voltage VDS (V) 100 Pout Output Power Pout (W) Input Capacitance Ciss (pF) 50 100 Gate to Source Voltage VGS Reverse Transfer Capacitance Crss (pF) 25 Output Capacitance vs. Drain to Source Voltage 10.5 1 0.3 0.1 0.1 0 Ambient Temperature Input Capacitance vs. Gate to Source Voltage 8.5 -10 mA 2 80 ηadd 1.5 1 60 40 VDS = 13.7 V IDO = 0.15 A f = 836 MHz 0.5 20 0 0.3 1 3 10 Drain to Gate Voltage VDG (V) Rev.2.00, Apr.14.2004, page 3 of 4 30 0 50 100 150 200 Input power Pin (mW) 250 0 ηadd (%) 0.01 3.6 Added Efficiency 0.3 Gate to Source Cutoff Voltage vs. Ambient Temperature Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Saturation Voltage VDS(sat) (V) 2SK3391 2SK3391 Package Dimensions As of January, 2003 Unit: mm 1.5 1.5 3.0 0.44 Max Package Code JEDEC JEITA Mass (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Ordering Information Part Name Quantity Shipping Container 2SK3391JX 1000 Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Apr.14.2004, page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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