2SJ160, 2SJ161, 2SJ162 Silicon P Channel MOS FET REJ03G0847-0200 (Previous: ADE-208-1182) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ160, 2SJ161, 2SJ162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SJ160 Value –120 2SJ161 2SJ162 –140 –160 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Unit V VGSS ID ±15 –7 V A IDR Note 1 Pch –7 100 A W Tch Tstg 150 –55 to +150 °C °C 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ160 Symbol V (BR) DSX 2SJ161 2SJ162 Min –120 Typ — Max — Unit V –140 –160 — — — — V V Test Conditions ID = –10 mA, VGS = 10 V Gate to source breakdown voltage Gate to source cutoff voltage V (BR) GSS VGS (off) ±15 –0.15 — — — –1.45 V V IG = ±100 µA, VDS = 0 ID = –100 mA, VDS = –10 V Drain to source saturation voltage Forward transfer admittance VDS (sat) |yfs| — 0.7 — 1.0 –12 1.4 V S ID = –7 A, VGS = 0 Note 2 ID = –3 A, VDS = –10 V Input capacitance Output capacitance Ciss Coss — — 900 400 — — pF pF VGS = 5 V, VDS = –10 V, f = 1 MHz Reverse transfer capacitance Turn-on time Crss ton — — 40 230 — — pF ns VDD = –20 V ID = –4 A toff — 110 — ns Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 Note 2 2SJ160, 2SJ161, 2SJ162 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating –20 ID (A) Drain Current Channel Dissipation 100 50 Ta = 25°C –10 I max (Continuous) D (–14.3 V, –7 A) –5 –2 –1 (–120 V, –0.83 A) –0.5 0 50 –0.2 –5 150 100 Case Temperature Tc (°C) –10 –20 –50 –100 –200 Drain to Source Voltage Typical Output Characteristics –500 VDS (V) Typical Transfer Characteristics –1.0 –10 ID (A) –8 VDS = –10 V Tc = 25°C –9 –8 –7 –6 –5 –4 –0.8 Tc = –25°C –0.6 –6 Drain Current ID (A) (–140 V, –0.71 A) (–160 V, –0.63 A) 2SJ160 2SJ161 2SJ162 0 Drain Current ) ot sh 1 s( ) ) m ot sh 5°C 10 1 2 = s( c= m PW 0 n (T 10 = ratio PW Ope DC Pch (W) 150 –4 Pch –3 –2 =1 00 W –2 25°C –0.4 75°C –0.2 –1 V 0 VGS = 0 0 –10 –20 –30 –40 0 75°C –5 25°C –2 Tc = –25°C –1 –0.5 –0.2 VGD = 0 V –0.1 –0.1 –0.2 –0.5 –1 Drain Current Rev.2.00 Sep 07, 2005 page 3 of 5 –2 –5 ID (A) –10 –0.8 –1.2 –1.6 –2.0 VGS (V) Drain to Source Voltage vs. Gate to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Drain Current –10 –0.4 Gate to Source Voltage VDS (V) –10 Drain to Source Voltage Drain to Source Saturation Voltage VDS (sat) (V) Drain to Source Voltage 0 –50 –6 Pulse Test –8 –5 A –4 –2 A ID = –1 A –2 0 0 –2 –4 –6 Gate to Source Voltage –8 –10 VGS (V) 2SJ160, 2SJ161, 2SJ162 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance |yfs| (S) Input Capacitance vs. Gate to Source Voltage Input Capacitance Ciss (pF) 1000 500 200 VDS = –10 V f = 1 MHz 100 0 2 4 6 8 10 3 1 0.3 0.1 0.03 0.01 Tc = 25°C VDS = –10 V ID = –2 A 0.003 10 k 30 k 100 k 300 k 1M 3M 10 M Frequency f (Hz) Gate to Source Voltage VGS (V) Switching Time vs. Drain Current Switching Time ton, toff (ns) 500 ton 200 100 50 toff 20 10 5 –0.1 –0.2 –0.5 –1 Drain Current –2 –5 –10 ID (A) Switching Time Test Circuit Waveform Output 10% Input RL Input 90% ton –20 V PW = 50 µs duty ratio = 1% 50 Ω toff 90% Output 10% Rev.2.00 Sep 07, 2005 page 4 of 5 2SJ160, 2SJ161, 2SJ162 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ160-E 2SJ161-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) 2SJ162-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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