2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351, 2SJ352 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ351 Symbol VDSX Value –180 Unit V VGSS –200 ±20 V ID IDR –8 –8 A A 100 150 W °C –55 to +150 °C 2SJ352 Gate to source voltage Drain current Body to drain diode reverse drain current Note 1 Channel dissipation Channel temperature Pch Tch Storage temperature Note: 1. Value at Tc = 25°C Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSX –180 –200 — — — — V V ID = –10 mA, VGS = 10 V Gate to source breakdown voltage Gate to source cutoff voltage V (BR) GSS VGS (off) ±20 –0.15 — — — –1.45 V V IG = ±100 µA, VDS = 0 ID = –100 mA, VDS = –10 V Drain to source saturation voltage Forward transfer admittance VDS (sat) |yfs| — 0.7 — 1.0 –12 1.4 V S ID = –8 A, VGS = 0 Note 2 ID = –3 A, VDS = –10 V Input capacitance Output capacitance Ciss Coss — — 800 1000 — — pF pF VGS = 5 V, VDS = –10 V, f = 1 MHz Reverse transfer capacitance Turn-on time Crss ton — — 18 320 — — pF ns VDD = –30 V ID = –4 A toff — 120 — ns Drain to source breakdown voltage 2SJ351 2SJ352 Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 Test Conditions Note 2 2SJ351, 2SJ352 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating –20 ID (A) Drain Current Channel Dissipation 100 50 Ta = 25°C –10 ID max (Continuous) ) ot sh 1 ) ot s( m sh 1 ) 10 s ( ot) 5°C = m 2 h 0 s PW 10 (1 Tc = = s ( 1 n PW = atio r PW pe O DC Pch (W) 150 –5 –2 –1 –0.5 2SJ351 0 0 50 100 Case Temperature –0.2 –5 150 Tc (°C) ID (A) S= –1 –7 VDS (V) VGS = –10 V –9 –8 –8 –7 –6 –6 Drain Current Drain Current Tc = 25°C Tc = 25°C –8 VG ID (A) 0V –10 –6 –5 –4 Pch –4 =1 25 W –3 –2 –2 –6 –5 –4 –4 –3 –2 –2 –1 V –1 V 0 VGS = 0 0 –10 –20 –30 –40 Drain to Source Voltage 0 –50 VDS (V) 0 –2 –8 –10 VDS (V) –1.0 VDS = –10 V VDS = –10 V °C C 5° Drain Current –4 –2 0 –2 –4 –6 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 5 –8 –0.8 Tc = –25°C –0.6 7 Tc –6 25 25 °C ID (A) –8 =– ID (A) –6 Typical Transfer Characteristics –10 Drain Current –4 Drain to Source Voltage Typical Transfer Characteristics 0 –500 Typical Output Characteristics –10 –8 –50 –100 –200 Drain to Source Voltage Typical Output Characteristics –9 –10 –20 2SJ352 –10 VGS (V) 25°C –0.4 75°C –0.2 0 0 –0.4 –0.8 –1.2 Gate to Source Voltage –1.6 –2.0 VGS (V) 2SJ351, 2SJ352 Switching Time vs. Drain Current 5 500 Switching Time ton, toff (ns) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Frequency 1 100 m 10 m Tc = 25°C VDS = –10 V ID = –2 A 1m 0.5 m 2k 10 k 100 k 1M ton 200 toff 100 50 20 10 5 –0.1 –0.2 10 M 20 M Frequency f (Hz) –0.5 –1 Drain Current Switching Time Test Circuit –2 –5 –10 ID (A) Waveform Output 10% Input RL Input 90% ton PW = 50 µs duty ratio = 1% VDD = –30 V 50 Ω toff 90% Output 10% Rev.2.00 Sep 07, 2005 page 4 of 5 2SJ351, 2SJ352 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0