2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Source (Flange) 3. Drain G S 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SK1056 Ratings 120 2SK1057 2SK1058 Unit V 140 160 Gate to source voltage Drain current VGSS ID ±15 7 V A Body to drain diode reverse drain current Channel dissipation IDR 1 Pch* 7 100 A W Channel temperature Storage temperature Tch Tstg 150 –55 to +150 °C °C Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1056 Symbol V(BR)DSX 2SK1057 2SK1058 Min 120 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = –10 V 140 160 Gate to source breakdown voltage Gate to source cutoff voltage V(BR)GSS VGS(off) ±15 0.15 — — — 1.45 V V IG = ±100 µA, VDS = 0 ID = 100 mA, VDS = 10 V Drain to source saturation voltage Forward transfer admittance VDS(sat) |yfs| — 0.7 — 1.0 12 1.4 V S ID = 7 A, VGD = 0 * 2 ID = 3 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss — — 600 350 — — pF pF VGS = –5 V, VDS = 10 V, f = 1 MHz Reverse transfer capacitance Turn-on time Crss ton — — 10 180 — — pF ns VDD = 20 V, ID = 4 A toff — 60 — ns Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 2 2SK1056, 2SK1057, 2SK1058 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 20 Ta = 25°C io n (T C = 25 °C ) 0.5 2SK1056 0 50 100 0.2 5 150 10 20 50 2SK1057 2SK1058 100 200 500 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 1.0 7 6 6 5 4 Pch = 4 3 2 100 W –2 5°C 25 75 VDS = 10 V C= 0.8 T TC = 25°C VGS = 10 V 9 8 8 Drain Current ID (A) Drain Current ID (A) t ra 50 pe O 100 ID max (Continuous) P PW 5 PW W = = 1 10 0 m = 0 s 1 m 1 s s sh 1 2 1 ot sh sh ot ot 1.0 C Drain Current ID (A) 10 D Channel Dissipation Pch (W) 150 0.6 0.4 0.2 2 1 0 10 20 30 40 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Drain Current Drain to Source Voltage vs. Gate to Source Voltage 10 5 0 50 VGD = 0 25 °C 75 °C TC 25 =– °C 2 1.0 0.5 0.2 0.1 0.1 0.2 0.5 1.0 2 Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 5 5 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage VDS (on) (V) 0 10 TC = 25°C 8 6 5A 4 2 0 2A ID = 1 A 2 4 6 8 Gate to Source Voltage VGS (V) 10 2SK1056, 2SK1057, 2SK1058 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (S) Input Capacitance vs. Gate Source Voltage Input Capacitance Ciss (pF) 1000 500 200 VDS = 10 V f = 1 MHz 100 0 –2 –4 –6 –8 –10 3.0 1.0 0.3 0.1 0.03 TC = 25°C VDS = 10 V ID = 2 A 0.01 0.003 10 k 30 k 100 k 300 k 1 M 3M 10 M Frequency f (Hz) Gate to Source Voltage VGS (V) Switching Time vs. Drain Current Switching Time ton, toff (ns) 500 ton 200 100 50 toff 20 10 5 0.1 0.2 0.5 1.0 5 2 10 Drain Current ID (A) Switching Time Test Circuit Waveforms Output 90 % R L= 2 Ω Input Input 10 % t on PW = 50 µs duty ratio =1% 50 Ω 10 % 20 V Output 90 % Rev.2.00 Sep 07, 2005 page 4 of 5 t off 2SK1056, 2SK1057, 2SK1058 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name Quantity Shipping Container 2SK1056-E 2SK1057-E 360 pcs 360 pcs Box (Tube) Box (Tube) 2SK1058-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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