RENESAS RJK1529DPK

RJK1529DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0510-0200
Rev.2.00
Jun. 13, 2005
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00 Jun. 13, 2005 page 1 of 6
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
70
210
70
210
35
91.8
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
RJK1529DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
150
—
—
3.0
25
—
Typ
—
—
—
—
43
0.022
Max
—
1
±0.1
4.5
—
0.025
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
2900
600
78
40
270
110
170
74
19
35
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
0.95
140
1.50
—
V
ns
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
0.6
—
µC
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Rev.2.00 Jun. 13, 2005 page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 35 A, VDS = 10 V Note4
ID = 35 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 35 A
VGS = 10 V
RL = 2.14 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 70 A
IF = 70 A, VGS = 0 Note4
IF = 70 A, VGS = 0
diF/dt = 100 A/µs
RJK1529DPK
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
300
ID (A)
100
150
1m
s
30
100
50
Operation in this
3 area is limited by
1 RDS(on)
PW = 10 ms
(1shot)
0.3
0.1
0.03
Ta = 25°C
0.01
0
50
100
150
Case Temperature
1
200
Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
160
60
6V
120
Drain Current
ID (A)
80
100 300 1000
30
3
10
Drain to Source Voltage VDS (V)
200
Pulse Test
10 V
8V
7V
40
20
5V
80
Tc = 75°C
40
−25°C
VGS = 4 V
0
4
8
12
Drain to Source Voltage
25°C
0
16
20
VDS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
4
Pulse Test
3
2
ID = 70 A
1
35 A
10 A
4
8
12
Gate to Source Voltage
Rev.2.00 Jun. 13, 2005 page 3 of 6
16
VGS (V)
20
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0
DC Operation
(Tc = 25°C)
ID (A)
100
Drain Current
10
µ
0µ s
s
10
10
Drain Current
Channel Dissipation
Pch (W)
200
4
8
12
Gate to Source Voltage
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
Pulse Test
0.01
1
3
10
30
Drain Current
100 300
ID (A)
1000
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.1
VGS = 10 V
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
RJK1529DPK
0.08
0.06
20 A
35 A
ID = 70 A
0.04
10 A
3A
0.02
0
−25
0
25
50
75
Case Temperature
100 125
150
100
Tc = −25°C
30
10
25°C
3
75°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
Tc (°C)
100000
500
30000
200
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
50
20
10
5
100
ID (A)
VGS = 0
f = 1 MHz
Ciss
3000
1000
Coss
300
100
Crss
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
30
10
1
0
3
10
30
100 300 1000
Reverse Drain Current IDR (A)
8
4
VDD = 120 V
60 V
30 V
20
40
Gate Charge
60
80
Qg (nC)
Rev.2.00 Jun. 13, 2005 page 4 of 6
0
100
VGS (V)
Switching Time t (ns)
VDS
60
0
12
Gate to Source Voltage
VDD = 30 V
60 V
120 V
180
120
VGS
100
150
VDS (V)
Switching Characteristics
10000
16
ID = 70 A
50
Drain to Source Voltage
Dynamic Input Characteristics
240
VDS (V)
30
10
Typical Capacitance vs.
Drain to Source Voltage
1
Drain to Source Voltage
3
Drain Current
Body-Drain Diode Reverse
Recovery Time
2
1
VGS = 10 V, VDD = 75 V
PW = 5 µs, duty < 1 %
RG = 10 Ω
1000
tf
tr
td(off)
tf
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
RJK1529DPK
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
VDS = 10 V
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
40
10 V
VGS = 0, -5 V
5V
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
ID = 10 mA
4
1 mA
3
2
0.1 mA
1
0
-25
0
VSD (V)
25
50
75
Case Temperature
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
D=
e
PW
uls
p
ot
T
h
1s
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (s)
1
Switching Time Test Circuit
10
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
V DD
= 75 V
Vout
10%
10%
90%
td(on)
Rev.2.00 Jun. 13, 2005 page 5 of 6
tr
10%
90%
td(off)
tf
RJK1529DPK
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-65
PRSS0004ZE-A
TO-3P / TO-3PV
5.0g
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
Unit: mm
5.0 ± 0.3
15.6 ± 0.3
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
RJK1529DPK-E
Quantity
30 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Jun. 13, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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