Single P-channel MOSFET ELM34415AA-N ■General description ■Features ELM34415AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-13A Rds(on) < 10.5mΩ (Vgs=-10V) Rds(on) < 16mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds Vgs Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Limit -30 ±25 -12 Id Ta=25°C Ta=70°C Junction and storage temperature range Pd Tj, Tstg Note A -9 -50 Idm Power dissipation Unit V V A 2.5 1.3 -55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 SOURCE SOURCE 4 GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4- 1 D G S Single P-channel MOSFET ELM34415AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Tj=125°C Vds=0V, Vgs=±25V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) -1.5 μA ±100 nA -3.0 V A 9.0 10.5 mΩ 13.0 29 16.0 mΩ S Forward transconductance Gfs Diode forward voltage Vsd Is=If, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz Crss Vgs=-10V, Vds=-15V Id=-13A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rgen=6Ω Turn-off fall time -1.0 -50 -1 -10 Vgs=-10V, Id=-13A Vgs=-4.5V, Id=-10A Vds=-10V, Id=-13A Qg V Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ta=25°C Typ. Max. Unit Note tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 1 1 -1.2 V 1 -2.7 -4 A A 3 4200 1218 pF pF 504 pF 42.0 1 58.0 nC 2 12.6 15.4 16.8 nC nC ns 2 2 2 22.4 7.0 ns ns 2 2 140.0 ns 2 Single P-channel MOSFET NIKO-SEM ELM34415AA-N P-Channel Logic Level Enhancement Mode Field Effect Transistor ■Typical electrical and thermal characteristics P1003EVG SOP-8 Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS= 0V -Is - Reverse Drain Current(A) 10 T A= 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 3 4- 3 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 MAR-31-2006 Single P-channel MOSFET NIKO-SEM ELM34415AA-N P-Channel Logic Level Enhancement Mode Field Effect Transistor 4 4- 4 P1003EVG SOP-8 Lead-Free MAR-31-2006