Single N-channel MOSFET ELM34404AA-N ■General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Symbol Vds Vgs Limit 60 ±20 Unit V V Id 5.5 4.5 A Idm 20 A Pd Tj, Tstg 2.5 1.3 -55 to 150 Note 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 50 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4- 1 D G S Single N-channel MOSFET ELM34404AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=48V, Vgs=0V Vds=40V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Ta=25°C Typ. Max. Unit Note 60 1.0 20 V 1.5 1 10 μA ±100 nA 2.5 V A Vgs=10V, Id=5.5A 42 55 mΩ 55 14 75 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=4.5A Vds=10V, Id=5.5A Diode forward voltage Vsd If=1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=25V, f=1MHz 650 80 pF pF Crss 35 pF Qg 12.5 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1 1 1 1 V 1 1.3 2.6 A A 3 18.0 nC 2 2 2 2 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=30V, Id=5.5A Qgd td(on) 2.4 2.6 11 20 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=30V, Id≈1A td(off) Rgen=6Ω 8 19 18 35 ns ns 2 2 6 15 ns 2 Turn-off fall time tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM P5506BVG Single N-channel MOSFET N-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor ELM34404AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V Is - Reverse Drain Current(A) 10 25° C 0.1 -55° C 0.01 0.001 0.0001 4- 3 T A = 125° C 1 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM34404AA-N Mode Field Effect Transistor P5506BVG SOP-8 Lead-Free 4- 4 4 SEP-30-2004