< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen .NX SERIES
APPLICATION NOTE
Publication Date : April 2014
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
th
APPLICATION NOTE
6.1 Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen .NX SERIES
APPLICATION NOTE
Index
1. Index
･････････････････････････
2. Features
2
3. Product line-up
･････････････････････････
3
4. Label marking
･････････････････････････
4
5. 2D code specifications
･････････････････････････
5
6. Safety Standard
･････････････････････････
6
7. Internal structure
･････････････････････････
9
8. How to use power module Properly and Safely
･････････････････････････ 10
･････････････････････････ 13
9. Installation of Power Module
9.1 Installing Capacitor
･････････････････････････ 13
9.2 Mounting Instructions
･････････････････････････ 13
9.3 Additional instructions
･････････････････････････ 15
･････････････････････････ 16
9.4 Explanation of Thermal resistance
th
･････････････････････････ 17
9.5 Chip location 6.1 Gen.
1200 V dual switch
･････････････････････････ 17
1200 V sixpack
･････････････････････････ 19
･････････････････････････ 20
1200 V sevenpack
th
･････････････････････････ 21
9.6 Chip location 6 Gen.
1200 V dual switch
･････････････････････････ 21
1200 V sixpack
･････････････････････････ 24
1200 V sevenpack
･････････････････････････ 25
1200 V CIB
･････････････････････････ 27
･････････････････････････ 29
1200 V brake chopper
th
9.7 Chip location 5 Gen.
･････････････････････････ 30
600 V single switch
･････････････････････････ 30
1200 V single switch
･････････････････････････ 30
600 V dual switch
･････････････････････････ 31
600 V sevenpack
･････････････････････････ 32
600 V CIB
･････････････････････････ 33
1200 V dual switch
･････････････････････････ 34
1200 V sevenpack
･････････････････････････ 36
1200 V CIB
･････････････････････････ 37
10. Switching energy
･････････････････････････ 38
11. Parallel Operation
･････････････････････････ 49
12. Test Circuit and Waveforms
･････････････････････････ 50
13. Safe operating Area
･････････････････････････ 51
The company name and product names herein are the trademarks and registered trademarks
of the respective companies.
Publication Date : April 2014
1
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Features
th
2. Features (except for 6.1 S1 series NX type)
sevenpack
7pack
Common Platform
(Basic structure)
CIB
dual
Dual switch
single
Single switch
62
122
M size base plate
M size case
Bush
Pin
Double terminal
Substrate
Cover
Terminal
Publication Date : April 2014
2
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Product line-up
3. Product line-up
th
(a) IGBT Modules 6.1 Gen. S1 series NX type
dual switch
sixpack
1200 V
1200 V
CM225DX-24S1
CM100TX-24S1
CM300DX-24S1
CM150TX-24S1
CM450DX-24S1
CM600DX-24S1
sevenpack
1200 V
CM100RX-24S1
CM150RX-24S1
th
(b) IGBT Modules 6 Gen. S series NX type
dual switch
sixpack
1200 V
1200 V
CM150DX-24S
CM 75TX-24S
CM200DX-24S
CM100TX-24S
CM300DX-24S
CM150TX-24S
CM450DX-24S
CM600DXL-24S
CM1000DXL-24S
sevenpack
1200 V
CM 75RX-24S
CM100RX-24S
CM150RX-24S
CM200RXL-24S
CIB
1200 V
CM35MXA-24S
CM50MXA-24S
CM75MXA-24S
CM100MXA-24S
CIB
600 V
CM75MX-12A
CM100MX-12A
single switch
600 V
CM600HX-12A
1200 V
CM35MXA-24S
CM50MXA-24S
CM75MXA-24S
1200 V
CM400HX-24A
CM600HX-24A
brake chopper
1200 V
CM150EXS-24S
CM200EXS-24S
CM300EXS-24S
th
(c) IGBT Modules 5 Gen. NX series
dual switch
sixpack
600 V
600 V
CM300DX-12A
CM100RX-12A
CM400DX-12A
CM150RX-12A
CM200RX-12A
1200 V
CM150DX-24A
CM200DX-24A
CM300DX-24A
CM450DX-24A
1200 V
CM 75RX-24A
CM100RX-24A
Table A Connection Diagram: without mark on Label
H: single switch
D: dual switch
NTC
E: brake chopper
NTC
NTC
R: sevenpack
M: CIB
Publication Date : April 2014
NTC
NTC
NTC
T: sixpack
3
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Label marking
4. Label marking
(a) A marking example with 2D code and rank symbol
Corporate crest
TYPE
Part number
No
Date code
Company name
MITSUBISHI
ELECTRIC
CORPORATION
D
JAPAN
The origin country
Rank symbol
2D code
th
(b) A marking example with rank symbol for 5 Gen. IGBT modules
Corporate crest
TYPE
No
Part number
Date code
Company name
MITSUBISHI ELECTRIC
CORPORATION JAPAN
D
The origin country
Rank symbol
(c) Date code formation
S 5 1 A A 1 G
C - 0 0 1
| | |
|
|
|
└ ── ── Serial number (not included during mass-production)
| | |
|
|
└ ── ── ── ── ── VCEsat rank symbol (for parallel use only)
| | |
|
└ ── ── ── ── ── ── ── RoHS Directive compliance symbol
| | |
└ ── ── ── ── ── ── ── ── ── Manufacturing management number
| | └ ── ── ── ── ── ── ── ── ── ── ── Manufacturing month: 1 - 9; January - September
| |
O; October, N; November, D; December
| └ ── ── ── ── ── ── ── ── ── ── ── ── Manufacturing year: last digit of A.D.
└ ── ── ── ── ── ── ── ── ── ── ── ── ── Factory code (UL Factory Identification)
Note: Some parametric are optional.
(d) Label position and parts name
Main terminals
Main terminals
Cover
Gate/Emitter auxiliary (signal) terminals
Label
Case
Base plate
Publication Date : April 2014
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< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
2D code specifications
5. 2D code specifications
2D code specifications
Item
Symbology
Data type
Error correction ability
Symbol size
Code size
Cell size
Data size
Specification
Data Matrix (ECC200)
alphanumeric (ASCII) characters
20 - 35 %
6.0 mm × 6.0 mm
24 cell × 24 cell
0.25 mm
32, 35 letters
Data item
Part number
Space
Date code
Space
Total
Letter size
20
2
8
2
32
Data item
Part number
Space
Date code
Space
Rank sumbol
Space
Total
Letter size
20
2
8
1
3
1
35
Data contents example ("SP" means space , equivalent to ASCII code number 32)
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
CM 1 0 0 R X - 2 4 S
SP SP SP SP SP SP SP SP SP SP SP
20
1
2
3
4
5
6
7
8
9
2
SP SP SP
8
2
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
CM 3 0 0 D X - 2 4 S
SP SP SP SP SP SP SP SP SP SP SP
20
Publication Date : April 2014
M 1 2 H A 1 G
2
5
M 1 2 H A 1 G
8
SP SP
1
D
SP SP SP
3
1
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Safety Standard (UL)
6. Safety Standard (UL)
Compliance with international standard UL1557 has already been certified (File No. E323585).
Please refer the certified modules to UL website.
We do not apply the certification, the authorization about other security standards (TUV, VDE, and CSA).
(And do not do a design in consideration of correspondence to the reinforcement insulation of the CE marking.)
(a) Certified modules can be searched through the following website (2013/8/20), click the Online Certifications Directory,
and input the file number E323585 in frame of UL File number, then click the SEARCH button.
Click here
Publication Date : April 2014
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< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Safety Standard (UL)
Input the file number e323585
Click this button
Or directly input the following URL into address bar of IE "http://database.ul.com/cgi-bin/XYV/template/LISEXT/1FRAME/gfilenbr.html"
Input the file number
Click this button
(b) In the search results page as in the below figure, click QQQX2.E323585 shown in cell of Link to File, then the certified module
table will be displayed (refer to the next page).
Click this number
Publication Date : April 2014
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< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Safety Standard (UL)
(c) Certified Modules (Search results example)
* There is a case of the omission of the update delay and the authorization article according to the convenience
of the update of Homepage.
* When a corresponding article isn't found out, please contact us.
* At present, Mitsubishi Electric Corporation don't supply yellow card "E323585".
Publication Date : April 2014
8
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Internal structure
7. Internal structure
(a) Pin terminal types (ex. CIB type)
Case
Cover
Silicone gel
Copper base plate
(b) Screw terminal type (ex. sevenpack type)
Terminal
Silicone gel
Cover
Case
Copper base plate
About the flammable
The epoxy in IGBT module complies with standard of UL 94V-0, but the silicone gel is combustible and does not comply with
94V-0.
The breakdown strength after the hardening is using the product of the characteristics above 10 kV/mm at the 340 °C flash point,
the 450 °C ignition point.
Because there is not self extinguish-ability, too, in case of the fire, a fire must be extinguished using the dry chemicals, the
carbon dioxide extinguishing agent and the bubble extinguishing agent and so on.
Because epoxy has self extinguish-ability, if a burning source is cut off, there is not live danger.
There is not a fireproof standard of UL which corresponds to the other silicon chip, the copper base board and so on.
Publication Date : April 2014
9
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
How to use power module Properly and Safely
8. How to use Power Module properly and safely
Unsuitable operation (such as electrical, mechanical stress and so on) may lead to damage of power modules.
Please pay attention to the following descriptions and use Mitsubishi Electric's IGBT modules according to the guidance.
！ Cautions
During Transit
• Keep shipping cartons right side up. If stress is applied by either placing a carton upside
down or by leaning a box against something, terminals can be bent and/or resin packages
can be damaged.
• Tossing or dropping of a carton may damage devices inside.
• If a device gets wet with water, malfunctioning and failure may result.
Special care should be taken during rain or snow to prevent the devices from getting wet.
Storage
• The temperature and humidity of the storage place should be 5 ∼ 35 °C and 45 ∼ 75 %
respectively. The performance and reliability of devices may be jeopardized if devices are
stored in an environment far above or below the range indicated above.
Prolonged
Storage
• When storing devices more than one year, dehumidifying measures should be provided for
the storage place. When using devices after a long period of storage, make sure to check the
exterior of the devices is free from scratches, dirt, rust, and so on.
Operating
Environment
• Devices should not be exposed to water, organic solvents, corrosive gases, explosive gases,
fine particles, or corrosive agents, since any of those can lead to a serious accident.
Flame
Resistance
• Although the epoxy resin and case materials are in conformity with UL94 V-0 standards,
it should be noted that those are not non-flammable.
Electrostatic
Discharge
• Following precautions should be taken for MOS-gated devices such as IGBT modules (CM***
series), to prevent electrostatic build up which could damage the devices.
(1) Precautions against the device rupture caused by static electrostatic electricity of human
bodies and cartons and/or excessive voltage applied across
the gate to emitter may damage and rupture devices.
The basis of anti-electro static build-up and quick dissipation of the charged electricity.
* Containers that are susceptible to static electricity should not be used for transit or for
storage.
* Gate to emitter should be always shorted with a carbon cloth or the like until right before a
module is used. Never touch the gate terminals with bare hands.
* Always ground the equipment and your body during installation (after removing a carbon
cloth or the like. It is advisable to cover the workstation and its surrounding floor with
conductive mats and ground them.
* It should be noted that the static electricity charged to a printed circuit board might damage
devices if the gate to emitter of the circuit board is open.
* Use soldering irons with grounded tips which are low voltage (DC 12 V - 24 V) types for
semiconductor.
Publication Date : April 2014
10
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
How to use power module Properly and Safely
！ Cautions
Anti-electrostatic
Measures
(2) Precautions when the gate to emitter is open
* Voltage should not be applied across the collector to emitter when the gate to emitter is
open.
* The gate to emitter should be shorted before removing a device from a unit.
(3) IGBT modules "NX" series
We use conductive cardboard box for interior packing box. The product abolishes the use of
conductive sponge, which is used for the short circuit between the gate and emitter.
* This conductive cardboard box completely short-circuits between gate emitters like a
conventional conductive sponge, and it is not an electrostatic measures parts clamping
over voltage.
* During an installation process (after taking out a module from a packing box to the
installation to an apparatus), please take enough static electricity measures such as the
use of ground band on the worker and/or using static-eliminator.
* If storage with the containers excepts the interior cardboard box, take any electrostatic
measures such as the use of a conductive container.
* The modules are not fixed in the interior cardboard box.
Please be careful about the handling enough not to drop a module at the time of takeoff
and unpacking the interior cardboard box and unpacking the interior cardboard box.
* IGBT modules "NX" series
Representative part number: CM35MX-24A, CM100RX-12A, CM300DX-24A
Product appearance example:
Electricallycharged measure
Wiring method
• When applying the voltage to gate-emitter test for acceptance as saturated voltage test, after
the test and before collecting the modules to the storage (conductivity) container or a packing
box, let it discharge electricity by high resistance (extent of 10 kΩ)
• Do not add the over stress to the screw terminals or terminal structure when mounting
modules. It might cause the damage to terminal structure or jointing part between case and
terminals. (mainly in IGBT module "NX series ")
• Do not add the over stress to the pin terminals when use the printed circuit board for wiring.
It might cause the bent (or snap) of pin terminals.
• Be careful about the size of the screw and the mounting process when fixing the printed
circuit board to the module case part with a self-tapping screw.
The case of the module may be damaged when using the wrong size screw and/or the wrong
mounting process.
Publication Date : April 2014
11
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
How to use power module Properly and Safely
！ Cautions
Mounting
• When mounting a module on a heat sink, a device could get damage if a sudden torque ("one side
tightening ") is applied at only one mounting terminal, since stress is applied on a ceramic plate and
silicon chips inside the module.
Shown in Fig.1 is the recommended torquing order for mounting screws.
4
1
2
3
(a) Four-point mounting type
Temporary tightening 1–2–3–4, Final tightening
1–2–3–4
Fig.1 Recommended torquing order for mounting screws
* Temporary tightening torque should be set at 20 ∼ 30 % of maximum rating.
• Also, care must be taken to achieve maximum contact (i.e. minimum contact thermal resistance) for the
best heat dissipation.
The flatness of heat sink (es) where a module is mounted should be as follows.
Copper base plate; IGBT module "NX" series (S series NX type)" :
±0 µm ∼ +100 µm on a length of 100 mm
Also, the surface finish should be as follows.
Less than 10 µm of roughness on a length of 100 mm
Please apply good thermal conductivity grease (termed hereinafter called grease) for heat radiation to
the contact surface of the module and heat sink evenly as follows.
+50 µm ∼ +100 µm
Grease on the contact surface prevents the corrosion of the contact surface.
However, use the kind of grease that has a stable characteristic over the whole operating temperature
range and does not change its properties for several years.
A torque wrench shall be used in tightening mounting screws and tighten screws to the specified torque.
Excessive torquing may result in damage or degradation of a device.
Grease applied area
Power Module
+ Convex
The edge line of base plate
− Concave
Specified range of
heat sink flatness
Fig.2 Flatness of heat sink
(For the non-plating base plate of entire surface)
Because there are already the adoption results in IPM and the long-term market use results, we think
there are no problems in reliability about the non-plating base plate of entire surface adoption in the NX
series.
The surface oxidation layer of the base plate does not have influence on thermal resistance specification.
In addition, we do not regard the pattern to occur on the base plate surface by the oxidation as a problem
in the appearance either.
This is a similar point of view about the nickel plating base plate.
Publication Date : April 2014
12
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Installation of Power Module
9. Installation of Power Module
9.1 Installing Capacitor
During switching, voltage is induced in power circuit stray inductance by the high di/dt of the main current when the stray inductance is
too large. This voltage can appear on the IGBT module and cause damage. In order to avoid this problem, guidelines that should be
followed in designing the circuit layout are:
1 Locate the smoothing capacitor as close as possible to the IGBT module
○
2 Use bypass capacitor (ceramic capacitor or film capacitor) near the IGBT module to bypass high frequency current
○
3 Adopt low impedance electrolytic capacitor as smoothing capacitor
○
4 Use snubber circuit to absorb surge voltage
○
5 Decrease switching speed in order to lower di/dt.
○
E
A
E
A
A
E
A
A
E
A
A
E
A
A
2 and ○
5 are the most effective to reduce surge voltage. The stray inductance of snubber circuit generally is not considered to avoid
○
2 , ○
4 , ○
5 is needed since there is a limit to shorten the length of wiring. The bypass
complicating the circuit. In addition, combination of ○
2 should be replaced with snubber circuit (RC, RCD) when oscillation.
capacitor of approach ○
A
E
A
A
E
A
A
A
E
E
A
A
E
A
A
E
A
A
Load
L2 small
L2 large
vce
L1: Stray inductance between the smoothing (electrolytic) capacitor and the IGBT module.
L2: Stray inductance between the bypass (or snubber) capacitor and the IGBT module.
L3: Stray inductance between the load and the power circuit's output stage.
9.2 Mounting instructions
When mounting IGBT modules on a heat sink, uneven mounting can cause the module ceramic isolation destroy.
To achieve the best thermal radiation effect, the larger the contact area is, the smaller the thermal resistance is. Heat sink should have
a surface finish in range of Rz6 - Rz12, warpage within 100 μm ( for 24A series products, heat sink should have a surface roughness
within 10 μm, warpage within 20 μm corresponding to 100 mm length).
Uniform coating of grease between the module and heat sink can prevent corrosion of contact parts. Select a compound, which has
stable characteristics over the whole operating temperature range and does not change its properties over the life of the equipment.
(See Table1 for suggested type).
Use a uniform coating of thermal interface compound.
The thickness of grease should be in the range +50 μm-+100 μm according to the surface finish.
Mounting screws should be tightened by using a torque wrench until the prescribed torque. As mentioned before, over torque terminal
or mounting screws may result in damage of IGBT modules. When an electric screwdriver is used, grease with low viscosity is
recommended and extra grease shall be extruded before final tightening screws.
* For the recommended torque order for mounting screws, refer to "Mounting” in the section of "How to Use Power Module Properly
and Safely."
Note) Maximum torque specifications are provided in device data sheets. The type and quantity of grease having an effect on the
thermal resistance are determined by consideration of both grease and heat sink. Typical value given in datasheet is measured by
using grease producted by Shin-Etsu Chemical Co., Ltd. {Thermal conductivity grease of λ=0.9 W/(m･K)}.
Publication Date : April 2014
13
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Installation of Power Module
Note: Formerly the mounting screws were prepared for users as accessories with module.
But for some reasons, this service was stopped since NF series products.
The mounting screws for《NF Series or the former》modules can be referred to Table 1.
Table 1
Size
Type
Manufacturer
(2012/08/22 to present)
Cross recessed hexagon head bolts with
M5×12
captive washer
FC-TEC CO.,LTD.
http://www.fctec.co.jp/
M6×12
Cross recess nuts and Hexagon head bolts
M5-M6 hexagon head bolt: JIS B 1187
Note: When using the screw except the attached screw, be careful of the screw length. If use the screw which is longer than
necessary, the bursting screw head reaches gel and aluminum wire in the module and causes the device destruction in the
resin of the terminal area. Use a screw with the length which is the optimal for the top to refer to the thickness and the
following size of the terminal for the connection.
Table 2 Terminal screwing hole depth and thickness (Unit in mm tolerance: ±0.3 mm)
VCES
Part number
Screw size
(V)
600
CM100RX-12A, CM150RX-12A, CM200RX-12A
CM75RX-24A, CM100RX-24A,
CM75RX-24S, CM100RX-24S, CM150RX-24S
Main
M5
Terminal
CM200RXL-24S
1200
CM100RX-24S1, CM150RX-24S1
CM150EXS-24S, CM200EXS-24S, CM300EXS-24S
600
CM300DX-12A, CM400DX-12A, CM600HX-12A
CM150DX-24A, CM200DX-24A,
CM300DX-24A, CM450DX-24A,
CM400HX-24A, CM600HX-24A,
Main
M6
CM150DX-24S, CM200DX-24S,
Terminal
1200
CM300DX-24S, CM450DX-24S
CM600DXL-24S, CM1000DXL-24S
CM225DX-24S1, CM300DX-24S1
CM450DX-24S1, CM600DX-24S1
∴ Not including the float of the terminal in size A and B.
The minimum valid depth for the main terminal
The formula to calculate the minimum valid depth is as the following.
The main terminal
A - tolerance=12.5-0.3=12.2 mm
terminal
B
Nut
A
Publication Date : April 2014
14
case
A
B
thickness
12.5
6.5
1.0
13.4
5.9
1.0
13.1
(5.6)
1.0
13.5
6.5
1.0
13
(6.5)
1.0
14
7.0
1.0
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Installation of Power Module
9.3 Additional Instructions
9.3.1. Mounting the printed circuit board (PCB) on the standoffs
Use the following screws when mounting the printed circuit board (PCB) on the standoffs.
The length of the screw depends on the PCB thickness (t1.6-t2.0).
th
th
9.3.1.1 6.1 Gen. S1 and 6 Gen. S series NX type
"φ2.6×10 or φ2.6×12 B1 tapping screw"
th
9.3.1.2 5 Gen. NX series
"φ2.3×10 or φ2.3×12 B1 tapping screw"
P
d
D
L
th
th
Item
5
d [mm]
1.7
2
D [mm]
2.3
2.6
P [mm]
0.79
0.91
L [mm]
Max. tightening torque
[N・m]
tightening method
The mounting /
dismounting permission
times
th
6.1 6
8 or 10
10 or 12
0.25
0.5
Tolerance
+0
-0.1
+0
-0.1
+0
-0.8
-
By hand work By hand work
once
-
once
-
9.3.2. Pin terminals
th
th
9.3.2.1 Pin terminal specifications (6.1 and 6 Gen.)
Item
Specification
Materials
Copper (Cu)
Plating materials
Tin (Sn)
Nickel (Ni) grounding plating
Sn 4 - 10 μm
Ni 1 - 6 μm
th
9.3.2.2 Pin terminal specifications (5 Gen.)
Item
Specification
Plating thickness
Materials
Plating materials
Copper (Cu)
Nickel (Ni)
Plating thickness 2 - 6 μm
9.3.2.3 Soldering conditions
a. Dip soldering
Item
Condition
Solder temperature 260 °C ± 5 °C
Immersion time
10 s ± 1 s
Publication Date : April 2014
b. Soldering iron
Item
Tip temperature
Heat time
15
Condition
360 °C ± 10 °C
5s±1s
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Installation of Power Module
9.4 Explanation of Thermal resistance
th
6.1 Gen. S1 series NX type
dual switch
：pp. 17 - 18
sixpack
：p. 19
sevenpack
：p. 20
th
6 Gen. S series NX type
：pp. 21 - 23
dual switch
sixpack
：p. 24
sevenpack
：pp. 25 - 26
CIB
：pp. 27 - 28
brake chopper
：p. 29
th
5 Gen. NX series
600 V single switch
：p. 30
1200 V single switch
：p. 30
600 V dual switch
：p. 31
600 V sevenpack
：p. 32
600 V CIB
：p. 33
1200 V dual switch
：pp. 34 - 35
1200 V sevenpack
：p. 36
1200 V CIB
：p. 37
The notice
* With the thickness of the heat sink to use, the thermal resistance Rt h ( f - a ) of the heat sink sometimes changes.
The smaller the size of is in the heat sink is the thinner the thickness of it becomes, the larger the thermal resistance becomes under
the same metal material.
* It the amount of coating of grease, contact thermal resistance Rt h ( c - s ) sometimes changes.
* Because the use of a naturally-air-cooled or forced-air-cooled heat sink is assumed for the general industrial power modules, when
using a water-cooled heat sink, thermal resistance Rt h ( j - c ) and/or contact thermal resistance Rt h ( j - c ) sometimes change. Significantly
from the values of specification due to the difference of the heat transfer characteristics.
* Because the packages of the: general industrial power modules are not hermetically sealed structure, it is possible for liquid to infiltrate
easily inside the module.
* Because we design the general industrial power modules on the assumption that the package materials and the semiconductor chips
do not have long-range contact with anything except the silicone gel to be used, after pulling the modules in the silicone oil and so on,
the characteristics and the reliability is not guaranteed.
.
Publication Date : April 2014
16
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
th
9.5 Chip location 6.1 Gen.
(Dimension: mm)
Chip location – 1200 V class dual switch
CM225DX-24S1
CM300DX-24S1
.
Publication Date : April 2014
17
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class dual switch
CM450DX-24S1
CM600DX-24S1
Publication Date : April 2014
18
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class sixpack
CM100TX-24S1
CM150TX-24S1
.
Publication Date : April 2014
19
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class sevenpack
CM100RX-24S1
CM150RX-24S1
Publication Date : April 2014
20
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
th
9.6 Chip location 6 Gen.
(Dimension: mm)
Chip location – 1200 V class dual switch
CM150DX-24S
CM200DX-24S
Publication Date : April 2014
21
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class dual switch
CM300DX-24S
CM450DX-24S
Publication Date : April 2014
22
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class dual switch
CM600DXL-24S
CM1000DXL-24S
Publication Date : April 2014
23
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class sixpack
CM75TX-24S
CM100TX-24S
CM150TX-24S
Publication Date : April 2014
24
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class sevenpack
CM75RX-24S
CM100RX-24S
CM150RX-24S
Publication Date : April 2014
25
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class sevenpack
CM200RXL-24S
Publication Date : April 2014
26
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class CIB
CM35MXA-24S
CM50MXA-24S
Publication Date : April 2014
27
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class CIB
CM75MXA-24S
CM100MXA-24S
Publication Date : April 2014
28
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class brake chopper
CM150EXS-24S
CM200EXS-24S
CM300EXS-24S
Publication Date : April 2014
29
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
th
9.7 Chip location 5 Gen.
(Dimension: mm)
Chip location – 600 V class single switches
CM600HX-12A
Chip location – 1200 V class single switches
(Dimension: mm)
CM400HX-24A
CM600HX-24A
Publication Date : April 2014
30
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 600 V class dual switches
CM300DX-12A
CM400DX-12A
Publication Date : April 2014
31
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 600 V class sevenpack
CM100RX-12A
CM150RX-12A
CM200RX-12A
Publication Date : April 2014
32
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 600 V class CIB
CM75MX-12A
CM100MX-12A
Publication Date : April 2014
33
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class dual switches
CM150DX-24A
CM200DX-24A
Publication Date : April 2014
34
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class dual switches
CM300DX-24A
CM450DX-24A
Publication Date : April 2014
35
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class sevenpack
CM75RX-24A
CM100RX-24A
Publication Date : April 2014
36
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Chip locations
(Dimension: mm)
Chip location – 1200 V class CIB
CM35MX-24A
CM50MX-24A
CM75MX-24A
Publication Date : April 2014
37
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
10. Switching energy
When it performs instruction load half (full) bridge movement at a high temperature that switching energy becomes maximum and
wiring inductance is small enough.
We show typical examples of switching energy under the conditions described below in Fig.3-11.
th
VCC=600 V(6.1 Gen.),VGE=±15V, --------------: T j =150 °C, - - - - -: T j =125 °C
(mJ/pulse)
Switching energy
Switching energy (mJ/pulse)
Reverse recovery energy E r r (mJ/pulse)
Err
10
Eoff
100
Err
100
10
Eoff
Eon
10
1
Eon
1
1
10
100
0.1
10
1000
Reverse recovery energy E r r (mJ/pulse)
1000
100
100
Collector current IC (A)
Emitter current IE (A)
CM225DX-24S1
1000
Collector current IC (A)
Emitter current IE (A)
CM300DX-24S1
100
1000
1000
100
1
10
0.1
1
10
100
10
Err
Eoff
10
1
Eon
1
1000
0.1
10
100
Collector current IC (A)
Emitter current IE (A)
CM450DX-24S1
Collector current IC (A)
Emitter current IE (A)
CM600DX-24S1
th
Fig.3-1 Half-bridge Inductive load switching energy of 6 Gen. dual switch
Publication Date : April 2014
38
1000
(mJ/pulse)
100
Reverse recovery energy
Err
(mJ/pulse)
100
Switching energy
10
Reverse recovery energy
Switching energy
(mJ/pulse)
Eon
(mJ/pulse)
Eoff
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
VCC=600 V(6.1 Gen.),VGE=±15V, --------------: T j =150 °C, - - - - -: T j =125 °C
10
Eoff
100
100
1000
0.1
10
100
100
Eon
1
10
Err
0.1
1000
1
10
100
Collector current IC (A)
Emitter current IE (A)
CM100TX/RX-24S1 Inverter part
Collector current IC (A)
Emitter current IE (A)
CM150TX/RX-24S1 Inverter part
th
Fig.3-2 Half-bridge Inductive load switching energy of 6.1 Gen. sixpack / sevenpack
th
Fig.3. Half-bridge Inductive load switching energy of 6.1 Gen.
Publication Date : April 2014
39
1000
(mJ/pulse)
(mJ/pulse)
1
10
Eoff
10
Reverse recovery energy
Err
Switching energy
1
Reverse recovery energy
Switching energy
(mJ/pulse)
(mJ/pulse)
Eon
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
Conditions: T j =150 °C, VCC=600 V (6 Gen.), VGE=±15 V, RG: Table 4
100
100
CM1000DXL-24S
CM450DX-24S
CM1000DXL-24S
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o n (mJ/pulse)
CM300DX-24S
CM200DX-24S
CM150DX-24S
10
CM600DXL-24S
1
CM450DX-24S
CM600DXL-24S
CM300DX-24S
CM200DX-24S
10
CM150DX-24S
1
10
100
1000
10
Collector current IC (A)
Fig.4-1 IGBT Turn-on switching energy
100
Emitter current IE (A)
Fig.4-3 Diode Reverse recovery energy
100
1000
CM300DX-24S
CM200DX-24S
CM150DX-24S
10
100
CM1000DXL-24S
Switching energy E o f f (mJ/pulse)
(CM600/1000DXL-24S)
Switching energy E o f f (mJ/pulse)
CM450DX-24S
CM150DX-24S
CM200DX-24S
CM300DX-24S
CM450DX-24S
CM600DXL-24S
CM1000DXL-24S
CM600DXL-24S
1
10
10
100
1000
Collector current IC (A)
Fig.4-2 IGBT Turn-off switching energy
th
Fig.4 Half-bridge Inductive load switching energy of 6 Gen. dual switch
Publication Date : April 2014
CM400DX-12A
40
1000
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
Conditions: T j =150 °C, VCC=600 V (6 Gen.), VGE=±15 V, RG: Table 4
100
100
10
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o n (mJ/pulse)
CM150TX-24S
CM100TX-24S
CM75TX-24S
1
0.1
CM150TX-24S
10
CM75TX-24S
CM100TX-24S
1
1
10
100
1000
1
Collector current IC (A)
Fig.5-1 IGBT Turn-on switching energy
10
100
1000
Emitter current IE (A)
Fig.5-3 Diode Reverse recovery energy
100
CM200RXL-24S
Switching energy (mJ/pulse)
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o f f (mJ/pulse)
100
CM150TX-24S
10
CM75TX-24S
CM100TX-24S
10
1
10
1
1
100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Fig.5-2 IGBT Turn-off switching energy
th
Fig.5 Half-bridge Inductive load switching energy of 6 Gen. sixpack / sevenpack
10
Publication Date : April 2014
100
1000
41
1000
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
Conditions: T j =150 °C, VCC=600 V (6 Gen.), VGE=±15 V, RG: Table 4
100
10
CM75MXA-24S
CM50MXA-24S
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o n (mJ/pulse)
CM35MXA-24S
CM100MXA-24S
1
0.1
CM100MXA-24S
10
CM75MXA-24S
CM50MXA-24S
1
CM35MXA-24S
0.1
1
10
100
1
Collector current IC (A)
Fig.6-1 IGBT Turn-on switching energy
10
Emitter current IE (A)
Fig.6-3 Diode Reverse recovery energy
Switching energy E o f f (mJ/pulse)
100
CM100MXA-24S
10
CM35MXA-24S
CM50MXA-24S
CM75MXA-24S
CM100MXA-24S
CM75MXA-24S
CM35MXA-24S
CM50MXA-24S
1
0.1
1
10
100
Collector current IC (A)
Fig.6-2 IGBT Turn-off switching energy
th
Fig.6 Half-bridge Inductive load switching energy of 6 Gen. CIB
Publication Date : April 2014
42
100
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
Conditions: T j =150 °C, VCC=600 V (6 Gen.), VGE=±15 V, RG: Table 4
100
Switching energy (mJ/pulse)
Reverse recovery energy E r r (mJ/pulse)
Switching energy (mJ/pulse)
Reverse recovery energy E r r (mJ/pulse)
100
Eon
Eoff
10
Err
Eon
Eoff
Err
10
1
1
10
100
10
1000
100
Collector current IC (A)
Forward current IF (A)
Collector current IC (A)
Forward current IF (A)
Fig.7-1 CM150EXS-24S
Fig.7-3 CM300EXS-24S
Switching energy (mJ/pulse)
Reverse recovery energy E r r (mJ/pulse)
100
Eon
Eoff
10
Err
1
10
100
1000
Collector current IC (A)
Forward current IF (A)
Fig.7-2 CM200EXS-24S
th
Fig.7 Half-bridge Inductive load switching energy of 6 Gen. brake chopper
Publication Date : April 2014
43
1000
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
th
Conditions: T j =125 °C, VCC=300 V (5 Gen. 600 V class) / 600 V (5 Gen. 1200 V class), VGE=±15 V, RG: Table 4
100
10
CM600HX-12A
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o n (mJ/pulse)
CM600HX-12A
10
CM300DX-12A
1
CM400DX-12A
0.1
CM400DX-12A
1
CM300DX-12A
0.1
10
100
1000
10
Collector current IC (A)
Fig.8-1 IGBT Turn-on switching energy
100
Emitter current IE (A)
Fig.8-3 Diode Reverse recovery energy
Switching energy E o f f (mJ/pulse)
100
CM600HX-12A
CM600HX-12A
CM400DX-12A
CM300DX-12A
10
CM400DX-12A
CM300DX-12A
1
10
100
1000
Collector current IC (A)
Fig.8-2 IGBT Turn-off switching energy
th
Fig.8 Half-bridge Inductive load switching energy of 5 Gen. 600 V class single / dual switch
Publication Date : April 2014
44
1000
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
th
Conditions: T j =125 °C, VCC=300 V (5 Gen. 600 V class) / 600 V (5 Gen. 1200 V class), VGE=±15 V, RG: Table 4
10
10
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o n (mJ/pulse)
CM200RX-12A
CM150RX-12A
1
CM100RX/MX-12A
CM200RX-12A
CM150RX-12A
1
CM100RX/MX-12A
CM75MX-12A
CM75MX-12A
0.1
0.1
1
10
100
1000
1
Collector current IC (A)
Fig.9-1 IGBT Turn-on switching energy
10
100
Emitter current IE (A)
Fig.9-3 Diode Reverse recovery energy
Switching energy E o f f (mJ/pulse)
100
CM200RX-12A
CM150RX-12A
CM100RX/MX-12A
CM75MX-12A
CM200RX-12A
10
CM100RX/MX-12A
CM150RX-12A
CM75MX-12A
1
1
10
100
1000
Collector current IC (A)
Fig.9-2 IGBT Turn-off switching energy
th
Fig.9 Half-bridge Inductive load switching energy of 5 Gen. 600 V class sevenpack / CIB
Publication Date : April 2014
45
1000
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
th
Conditions: T j =125 °C, VCC=300 V (5 Gen. 600 V class) / 600 V (5 Gen. 1200 V class), VGE=±15 V, RG: Table 4
100
Reverse recovery energy E r r (mJ/pulse)
Switching energy E o n (mJ/pulse)
100
CM600HX-24A
10
CM200DX-24A
CM300DX-24A
CM600HX-24A
CM450DX-24A
CM400HX-24A
CM300DX-24A
CM150DX-24A
10
CM200DX-24A
CM150DX-24A
1
1
10
100
1000
10
Collector current IC (A)
Fig.10-1 IGBT Turn-on switching energy
100
Emitter current IE (A)
Fig.10-3 Diode Reverse recovery energy
100
CM600HX-24A
CM450DX-24A
Switching energy E o f f (mJ/pulse)
CM400HX-24A
CM300DX-24A
CM200DX-24A
CM400HX-24A
CM600HX-24A
CM450DX-24A
CM300DX-24A
CM200DX-24A
CM150DX-24A
CM150DX-24A
10
1
10
100
1000
Collector current IC (A)
Fig.10-2 IGBT Turn-off switching energy
th
Fig.10 Half-bridge Inductive load switching energy of 5 Gen. 1200 V class single / dual switch
Publication Date : April 2014
46
1000
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
th
th
Conditions: T j =125 °C, VCC=300 V (5 Gen. 600 V class) / 600 V (5 Gen. 1200 V class), VGE=±15 V, RG: Table 4
10
10
CM100RX-24A
Reverse recovery energy E r r (mJ/pulse)
CM75RX/MX-24A
Switching energy E o n (mJ/pulse)
CM35MX-24A
CM100RX-24A
1
CM50MX-24A
0.1
CM75RX/MX-24A
CM35MX-24A
CM50MX-24A
1
0.1
1
10
100
1
Collector current IC (A)
Fig.11-1 IGBT Turn-on switching energy
10
Emitter current IE (A)
Fig.11-3 Diode Reverse recovery energy
Switching energy E o f f (mJ/pulse)
100
CM35MX-24A
CM50MX-24A
CM75MX/RX-24A
CM100RX-24A
CM100RX-24A
10
CM75RX/MX-24A
CM50MX-24A
CM35MX-24A
1
1
10
100
Collector current IC (A)
Fig.11-2 IGBT Turn-off switching energy
th
Fig.11 Half-bridge Inductive load switching energy of 5 Gen. 1200 V class sevenpack, CIB
Publication Date : April 2014
47
100
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Switching energy
Table 4 Recommended Gate Resistance and RG value used for switching energy measurement (Typ.)
RG
Typ.
RG
Typ.
Module
Module
(Ω)
(Ω)
(Ω)
(Ω)
CM100TX-24S1
6.2-62
6.2
CM225DX-24S1
1.5-15
1.5
CM150TX-24S1
0-30
0
CM300DX-24S1
0-15
0
CM100RX-24S1
6.2-62
6.2
CM450DX-24S1
0-10
0
CM150RX-24S1
0-30
0
CM600DX-24S1
0-6.8
0
Module
CM75TX-24S
CM100TX-24S
CM150TX-24S
CM75RX-24S
CM100RX-24S
CM150RX-24S
RG
(Ω)
8.2-82
6.2-62
0-30
8.2-82
6.2-62
0-30
Typ.
(Ω)
8.2
6.2
0
8.2
6.2
0
Module
CM35MXA-24S
CM50MXA-24S
CM75MXA-24S
CM100MXA-24S
CM150DX-24S
CM200DX-24S
RG
(Ω)
18-180
13-130
8.2-82
6.2-62
0-30
0-22
Typ.
(Ω)
18
13
8.2
6.2
0
0
RG
Typ.
RG
Typ.
Module
Module
(Ω)
(Ω)
(Ω)
(Ω)
CM75MX-12A
8.0-83
8.2
CM35MX-24A
8.9-89
9.1
CM450DX-24A
CM100MX-12A
6.0-62
6.2
CM50MX-24A
6.0-62
6.2
CM400HX-24A
CM100RX-12A
6.0-62
6.2
CM75MX-24A
4.1-41
4.3
CM600HX-24A
CM150RX-12A
4.1-41
4.3
CM75RX-24A
4.1-41
4.3
CM200RX-12A
3.0-31
5.6
CM100RX-24A
3.0-31
3.0
CM300DX-12A
2.0-21
5.1
CM150DX-24A
2.0-21
2.2
CM400DX-12A
1.6-16
3.0
CM200DX-24A
1.6-16
1.6
CM600HX-12A
1.0-10
1.0
CM300DX-24A
1.0-10
1.0
*: In case of type CM**RX, CM**MX and CM**MXA, Typ. represents inverter part only
rg
(Ω)
3.2
6.5
rg
(Ω)
13
13
rg
(Ω)
13
9.8
Part number
CM150RX-24S
CM150TX-24S
CM150DX-24S
CM200DX-24S
CM450DX-24S1
CM600DX-24S1
Part number
CM300DX-24S
CM450DX-24S
RG
(Ω)
0.68-6.8
0.75-7.8
1.0-10
Typ.
(Ω)
0.68
0.75
1.0
rg
(Ω)
4.3
5.0
rg
(Ω)
6.5
4.3
Part number
CM600DXL-24S
CM1000DXL-24S
rg
(Ω)
3.3
2.0
rg
rg
Part number
(Ω)
(Ω)
CM600HX-12A
CM300DX-24A
3.0
CM400HX-24A
3.0
CM450DX-24A
2.0
CM600HX-24A
1.0
th
The internal gate resistance of the 5 Gen. NX series uses semiconductor chip resistors.
* The semiconductor resistor has max. 200 % of temperature coefficient of 125 °C for 25 °C and ±30 % of resistance variation.
Part number
rg
(Ω)
3.0
Part number
Part number
Typ.
(Ω)
0
0
0
0
CM300DX-24S
CM450DX-24S
CM600DXL-24S
CM1000DXL-24S
Module
Table 5 Internal gate resistance
rg
Part number
Part number
(Ω)
CM150RX-24S1
13
CM225DX-24S1
CM150TX-24S1
13
CM300DX-24S1
RG
(Ω)
0-15
0-10
0-6.8
0-5.1
Module
Part number
Publication Date : April 2014
48
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Parallel specification
11 Parallel specifications
The following sub-sections outline the basic requirements and considerations for parallel operation of single or dual switch IGBT
modules with ratings of 200 A or more.
With proper attention to circuit design and device selection several modules can be reliably operated in parallel.
● We deliver .the classified modules which are in the same saturation rank according to the paralleled number of modules on the
orders received.
● The saturation voltage rank symbol (C, D, E etc.) is marked on the module label.
Table 6 the saturation voltage rank symbol for parallel applications (IC=rated current, VGE=15 V, Tj=25 °C)
12A
24A
24S
(chip)
24S1 (chip)
Rank
symbol
B
C
D
E
-
VCEsat (V)
Rank
symbol
VCEsat (V)
Rank
symbol
VCEsat (V)
Rank
symbo
l
VCEsat (V)
1.44 - 1.59
B
1.64 - 1.74
A
1.46 - 1.67
A
1.46 - 1.67
1.55 - 1.72
C
1.70 - 1.83
B
1.58 - 1.81
B
1.58 - 1.81
1.68 - 1.87
D
1.79 - 1.99
C
1.67 - 1.95
C
1.67 - 1.95
1.83 - 2.04
E
1.95 - 2.24
D
1.81 - 2.15
D
1.81 - 2.15
F
2.20 - 2.60
This table is settled from the view point of keeping current imbalance within ±15% at its Tj=150 °C.
Notes
1. Modules of same rank should be applied only for each paralleled connection, and it permits to use the different
rank modules to the different phase outputs or axis in the one equipment.
2. This rank specification is useful for the static balance at DC current point, and this is not effective for dynamic
balance at switching transition.
As the switching balance is mainly dominated by wiring inductance in the equipment,
take care of the symmetric circuit design and layout about this wiring for parallel operation with these modules.
3 Target imbalances
When modules of the same saturation voltage rank are paralleled, the static current imbalance will be minimized so that the following
imbalance rate can be applied: 10% for 600 V class, 15% for 1200 V class.
The imbalance rate is defined when more than two modules are paralleled. The collector current easily concentrates on one element
with the parallel number increasing. Therefore, derating is important for parallel operation.
When more than two modules are paralleled the derating factor can be calculated using the following formula:
(1-((n-1)× (1-x)/ (1+x)+1)/n)×100%, where ±x×100% is the imbalance rate described above.
For example, in case of four IGBT modules of 600V class connected in parallel, the current derating factor is
(1-((4-1)×(1-0.1)/(1+0.1)+1)/4)×100%=13.6%
, so the allowable current with 4 parallel 300 A modules is
300×(1-0.136)×4=1036 A
derating factors (%)
Parallel No.
n
600 V class
1200 V class
2
10.0
15.0
3
12.1
17.4
4
13.6
19.6
Publication Date : April 2014
49
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Test circuit and waveforms
12 Test circuit and waveforms
Half-bridge switching test circuit and waveforms
vGE
90 %
iE
Cs1
0V
0
IE
+
C2E1
iC
VCC
0A
90 %
+VGE
trr
t
～
～
Es1
vCE
Q r r =0.5×I r r ×t r r
t
Load
G1
-VGE
～
～
iE
C1
Irr
Cs2
RG
0.5×I r r
G2
0
vGE
-VGE
10%
iC
0A
Es2
tf
tr
td(on)
E2
t
td(off)
Fig.12-1 In case of CM600/1000DXL-24S
C1
vGE
90 %
iE
Cs1
0V
0
Q r r =0.5×I r r ×t r r
t
Load
G1
IE
Es1
+
C2E1
iC
VCC
trr
t
～
～
-VGE
～
～
iE
0A
90 %
Irr
+VGE
RG
0.5×I r r
vCE
G2
0
vGE
-VGE
10%
iC
0A
Es2
tr
td(on)
E2
tf
t
td(off)
Fig.12-2 In case of CM***DX
Fig.12 Half-bridge switching test circuit and waveforms
iE
iC
iC
ICM
vCE
VCC
0.1×ICM
0.1×VCC
0
vEC
VCC
vCE
VCC
0.1×VCC
t
IEM
ICM
0.02×ICM
0
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0A
t
0V
t
ti
Diode Reverse recovery energy
Fig.13 IGBT turn-on/turn-off switching energy and Diode reverse recovery test wave forms.
(Integral time instruction drawing)
100% of parameter to fix each 10% and 2% doesn't include the current which is caused by Diode reverse recovery or the stray
capacitance of load and a surge voltage and a voltage drop which is caused by the stray inductance.
100% of VCE is VCC.
An influence over the switching loss by the corrugated change, which is caused by these, is reflected in the switching loss just as it
is.
Also, for the reactive-power, we included it in the integration value because it is impossible to separate.
Strictly, 0% of the IC is not IC=0 A and it is Ices. 0% of VCE is not VCE=0 V and it is VCEsat.
When it isn't possible to sufficiently remove the vibration, which is caused by the wiring inductance, a range is fixed based on the
line, which estimated the center line of the vibration.
But, when the same estimation above is difficult, we sometimes suppose that the range is fixed based on the time which the
waveform reaches the criterion first.
Publication Date : April 2014
50
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Safe operating area (SOA)
13. Safe operating area (SOA)
th
6.1 Gen. S series NX type
Turn-off switching SOA (Reverse Bias SOA)
Short-circuit SOA
Note; For suppressing VCE at short-circuit turn-off below this SCSOA curve We recommend to use a soft turn-off technique for -di/dt (off) decreasing control.SOA is 99% guarantee by extremal probability
Publication Date : April 2014
51
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Safe operating area (SOA)
th
6 Gen. S series NX type
Turn-off switching SOA (Reverse Bias SOA)
Short-circuit SOA
Note; For suppressing VCE at short-circuit turn-off below this SCSOA curve We recommend to use a soft turn-off technique for -di/dt (off) decreasing control.SOA is 99% guarantee by extremal probability
Publication Date : April 2014
52
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Safe operating area (SOA)
th
5 Gen. NX series
Turn-off switching SOA (Reverse Bias SOA)
Short-circuit SOA (SCSOA)
Note; For suppressing VCE at Short Circuit turn-off below this SCSOA curve, we recommend to use a soft turn-off technique for –di/dt(off) decreasing control.SOA is 99% guarantee by extremal probability.
Publication Date : April 2014
53
< IGBT Modules >
6.1th Gen. S1 SERIES NX TYPE /
6th Gen. S SERIES NX TYPE / 5th Gen. NX SERIES
APPLICATION NOTE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
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Publication Date : April 2014
54