ROHM RB085B

Data Sheet
Schottky Barrier Diode
RB085B-90
Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
Features
1)Power mold type.(CPD)
2)Low VF
1.6
1.6
3.0 2.0
6.0
Application
General rectification
3)High reliability
CPD
Construction
Silicon epitaxial planar
2.3 2.3
Structure
(2)
ROHM : CPD
JEITA : SC-63
Manufacture Date
(1) (3)
Taping dimensions(Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Business frequencies, Rating of R-load, Tc=85C Max.
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak(60Hz / 1cyc)(*1)
Junction temperature
Storage temperature
Electrical characteristic(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Unit
V
V
A
A
90
90
10
45
150
40 to 150
Symbol
VF
IR
Min.
-
jc
C
C
Typ.
-
Max.
0.83
-
-
150
μA
-
-
6.0
C/W
1/3
Unit
V
Conditions
IF=5.0A
VR=90V
junction to case
2011.04 - Rev.C
Data Sheet
RB085B-90
Electrical characteristic curves
100000
Ta=150C
10000
Ta=125C
1000
Ta=75C
REVERSE CURRENT:IR(uA)
Ta=125C
1
Ta=75C
Ta=25C
Ta=-25C
0.1
0.01
0
100
Ta=25C
10
Ta=-25C
1
100
10
0.1
100
200
300
400
500
600
700
800
1
0
900
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
60
70
80
90
0
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
770
760
750
AVE:766.6mV
160
140
120
100
80
60
40
1cyc
8.3ms
150
100
AVE:136.0A
REVERSE RECOVERY TIME:trr(ns)
200
510
500
490
480
470
0
450
AVE:498.5pF
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
Ifsm
8.3ms 8.3ms
1cyc
100
AVE:7.40ns
0
0
Ct DISPERSION MAP
1000
30
Ifsm
520
IR DISPERSION MAP
300
10
1
IFSM DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
530
460
VF DISPERSION MAP
50
AVE:14.3uA
540
20
740
250
Ta=25C
VR=90V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
780
180
REVERSE CURRENT:IR(uA)
Ta=25C
IF=5A
n=30pcs
10
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
550
200
790
FORWARD VOLTAGE:V F(mV)
f=1MHz
0.01
0.001
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1000
PEAK SURGE
FORWARD CURRENT:I FSM(A)
FORWARD CURRENT:I F(A)
Ta=150C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
trr DISPERSION MAP
2/3
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2011.04 - Rev.C
Data Sheet
RB085B-90
Mounted on epoxy board
t
100
10
1
10
1ms
Rth(j-c)
1
Sin(＝180)
5
0.1
1
10
100
0
1000
5
Sin(180)
D=1/2
DC
2
0A
Io
0V
VR
t
20
T
D=t/T
VR=45V
Tj=150C
DC
D=1/2
10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIDE
FORWARD CURRENT :I o(A)
6
15
20
30
30
8
10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
10
4
DC
10
0
0.01
TIME : t(ms)
IFSM-t CHARACTERISTICS
REVERSE POWER
DISSIPATION : PR (W)
D=1/2
10
0.1
0.001
100
Rth(j-a)
tim
300us
FORWARD POWER
DISSIPATION : Pf(W)
Ifsm
15
IF=5A
IM=100mA
100
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
0A
Io
0V
VR
t
20
DC
T
D=t/T
VR=45V
Tj=150C
D=1/2
10
Sin(180)
Sin(180)
0
0
0
0
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
25
20
15
10
AVE:5.30kV
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.C
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R1120A