ROHM RB085B-40

Data Sheet
Schottky barrier diode
RB085B-40
 Dimensions (Unit : mm)
Land size figure (Unit : mm)
6.0
Features
1) Power mold type. (CPD)
2) Low VF
1.6
1.6
3.0 2.0
6.0
Applications
General rectification
3) High reliability
CPD
Construction
Silicon epitaxial planar
2.3 2.3
Structure
(2)
(1)
(3)
Taping dimensions (Unit : mm)
 Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltag (DC)
Average rectified forward current(*1)
Forward current surge peak(60Hz / 1cyc)(*1)
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
°C
°C
45
40
10
45
150
40 to 150
(*1) Rating of per diode : Io/2
 Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
Conditions
Min.
Typ.
Max.
Unit
-
-
0.55
V
IF=5.0A
VR=40V
junction to case
IR
-
-
200
A
jc
-
-
6.0
C/W
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2011.04 - Rev.A
Data Sheet
RB085B-40
 Electrical characteristic curves
Ta=150C
10
1000
f=1MHz
Ta=-25C
Ta=75C
Ta=25C
0.1
10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125C
1
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:I F(A)
Ta=125C
100000
Ta=150C
Ta=75C
1000
100
Ta=25C
10
Ta=-25C
1
100
10
0.1
0.01
100
200
300
400
500
1
0.01
600
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
20
30
0
40
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
530
520
510
500
AVE:504.0mV
490
10
20
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
800
300
Ta=25C
IF=5A
n=30pcs
Ta=25C
VR=40V
n=30pcs
250
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:V F(mV)
10
Ta=25C
f=1MHz
VR=0V
n=10pcs
790
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0
200
150
100
AVE:20.3uA
50
780
770
760
750
AVE:728.1pF
740
730
720
710
0
480
700
VF DISPERSION MAP
IR DISPERSION MAP
30
1cyc
Ifsm
200
8.3ms
150
AVE:156.0A
100
50
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
250
REVERSE RECOVERY TIME:trr(ns)
300
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ct DISPERSION MAP
15
10
5
AVE:12.30ns
0
0
Ifsm
8.3ms
100
10
1
trr DISPERSION MAP
IFSM DISPERSION MAP
t
100
10
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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Rth(j-a)
D=1/2
10
Rth(j-c)
Mounted on epoxy board
1
0.1
0.001
100
15
IM=100mA
1ms
IF=3A
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
DC
Sin(=180)
10
5
time
300us
0.01
FORWARD POWER
DISSIPATION:Pf(W)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1000
8.3ms
1cyc
0
100
1000
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.A
Data Sheet
RB085B-40
5
Sin(＝180)
D=1/2
2
DC
1
0A
Io
0V
VR
t
20
T
D=t/T
VR=20V
Tj=150C
DC
D=1/2
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
3
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
4
REVERSE POWER
DISSIPATION:PR (W)
30
30
20
0A
Io
0V
VR
t
T
DC
D=t/T
VR=20V
Tj=150C
D=1/2
10
Sin(180)
Sin(=180)
0
0
0
0
10
20
30
40
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve (Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve (Io-Tc)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
30
No break at 30kV
25
20
AVE:11.5kV
15
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.A
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Notes
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R1120A