ROHM RB095B

Data Sheet
Schottky barrier diode
RB095B-40
Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
Features
1)Power mold type.(CPD3)
2)Low VF
1.6
1.6
3)High reliability
CPD
Construction
Silicon epitaxial planar
(2)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
45
VRM
40
VR
6
Io
45
IFSM
150
Tj
40 to 150
Tstg
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120C
(1) (3)
Unit
V
V
A
A
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature
Storage temperature
Forward voltage
Reverse current
Thermal impedance
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2.3 2.3
Structure
Taping dimensions(Unit : mm)
Electrical characteristic (Ta=25C)
Parameter
3.0 2.0
6.0
Applications
General rectification
(Common cathode dual chip)
Symbol
VF
IR
Min.
-
jc
C
C
Typ.
-
Max.
0.55
-
-
100
A
-
-
6.0
C/W
1/3
Unit
V
Conditions
IF=3.0A
VR=40V
junction to case
2011.04 - Rev.F
Data Sheet
RB095B-40
Electrical characteristic curves
10
Ta=25C
Ta=75C
0.1
200
300
400
500
600
Ta=75C
1000
100
Ta=25C
10
Ta=-25C
1
0.1
700
10
15
20
25
30
35
0
40
480
470
AVE:472.9mV
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
200
Ta=25C
IF=3A
n=30pcs
REVERSE CURRENT : IR(A)
FORWARD VOLTAGE : V F(mV)
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
500
460
10
1
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
490
100
0.01
650
Ta=25C
VR=40V
n=30pcs
150
100
50
AVE:14.2A
Ta=25C
f=1MHz
VR=0V
n=10pcs
640
CAPACITANCE
BETWEEN TERMINALS : Ct(pF)
100
f=1MHz
10000
0.01
0
Ta=125C
CAPACITANCE
BETWEEN TERMINALS : Ct(pF)
Ta=-25C
Ta=125
1
Ta=150C
100000
REVERSE CURRENT : IR(A)
FORWARD CURRENT : I F(A)
1000
1000000
Ta=150C
630
620
610
AVE:617.9pF
600
590
580
570
560
450
0
550
VF DISPERSION MAP
IR DISPERSION MAP
1cyc
Ifsm
200
8.3ms
150
100
50
AVE:76.0A
0
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:11.40ns
5
PEAK SURGE
FORWARD CURRENT : I FSM(A)
250
REVERSE RECOVERY TIME : trr(ns)
Ifsm
8.3ms
100
10
0
IFSM DISPERSION MAP
1
trr DISPERSION MAP
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
Ifsm
t
100
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
100
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1000
8.3ms
1cyc
10
Rth(j-a)
FORWARD POWER
DISSIPATION : Pf(W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
30
300
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ct DISPERSION MAP
Rth(j-c)
10
Mounted on epoxy board
1
IM=100mA
1ms
0.1
0.001
IF=1A
D=1/2
5
DC
Sin(=180)
time
300s
0
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.F
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
15
8
6
Sin(180)
D=1/2
4
DC
2
0
0A
Io
0V
VR
t
DC
T
10
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
10
REVERSE POWER
DISSIPATION : PR (W)
Data Sheet
RB095B-40
D=t/T
VR=20V
Tj=150C
D=1/2
5
Sin(θ＝180)
0
0
10
20
30
40
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
0A
Io
0V
VR
t
DC
T
10
D=t/T
VR=20V
Tj=150C
D=1/2
5
Sin(=180)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
Np break at 30kV
25
20
15
AVE:15.6kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.F
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A