ROHM RF501B2S_11

Data Sheet
Fast Recovery Diode
RF501B2S
Dimensions（Unit : mm ）
Land size figure(Unit : mm)
6.0
Features
1) Power mold type.(CPD)
2) High reliability
3) Low VF
1.6
CPD
4) Very fast recovery
5) Low switching loss
1.6
3.0 2.0
6.0
Applications
General rectification
2.3 2.3
Structure
Construction
Silicon epitaxial planar
(2)
(1)
(3)
Taping specifications(Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
200
VRM
200
VR
5
Io
Forward current surge peak (60Hz / 1cyc)(*1)
40
IFSM
Junction temperature
150
Tj
Storage temperature
55 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128C
Unit
V
V
A
A
°C
°C
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
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Symbol
VF
Min.
Typ.
Max.
Unit
-
0.86
0.92
V
IR
-
0.015
1
μA
trr
-
15
30
ns
1/3
Conditions
IF=5A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*I R
2011.05 - Rev.G
Data Sheet
RF501B2S
Electrical characteristic curves
Ta=25C
Ta=75C
Ta=-25C
0.01
1000
Ta=75C
100
Ta=25C
10
Ta=-25C
1
0.1
0.001
0
0
100 200 300 400 500 600 700 800 900 1000
890
150
880
870
860
AVE:856.6mV
Ta=25C
VR=200V
n=30pcs
90
80
70
60
50
40
AVE : 10.7nA
30
20
10
840
0
VF DISPERSION MAP
8.3ms
200
1
0
10
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
150
AVE : 88.0A
100
200
Ta=25C
f=1MHz
VR=0V
n=10pcs
190
180
170
AVE : 74.9pF
160
150
1000
50
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE : 14.5ns
5
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
0
0
1
IFSM DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
30
Ct DISPERSION MAP
30
1cyc
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
250
10
IR DISPERSION MAP
300
Ifsm
100
200
100
Ta=25C
IF=5A
n=30pcs\
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
100
f=1MHz
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
850
50
1000
PEAK SURGE
FORWARD CURRENT : I FSM(A)
0.1
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125C
Ta=125C
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
1
REVERSE CURRENT : IR(nA)
Ta=150C
FORWARD CURRENT : :I F(A)
Ta=150C
10000
10
trr DISPERSION MAP
2/3
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2011.05 - Rev.G
Data Sheet
RF501B2S
100
1000
10
Ifsm
t
100
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
Io
AVERAGE RECTIFIED
FORWARD CURRENT : lo(A)
1
1ms
8
T
IF=1A
D=t/T
VR=100V
Tj=150C
6
4
Sin(180)
2
0
25
50
75
100
Sin(180)
4
2
tim
0
0.01
0.1
1
10
100
1000
0
10
0A
Io
0V
VR
t
DC
T
8
125
150
AMBIENT TEMPERATURE : Ta(C)
Derating Curveﾞ(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
4
6
8
10
30
D=t/T
VR=100V
Tj=150C
D=1/2
6
4
Sin(180)
2
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0
0
D=1/2
6
300us
VR
t
D=1/2
IM=100mA
No break at 30kV
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0V
DC
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
10
Rth(j-c)
TIME : t(s)
Rth-t CHARACTERISTICS
0A
DC
8
10
0.1
0.001
10
1
Rth(j-a)
FORWARD POWER
DISSIPATION : Pf(W)
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Mounted on epoxy board
20
15
10
5
0
0
25
50
75
100
CASE TEMPARATURE : Tc(C)
Derating Curveﾞ(Io-Tc)
3/3
125
150
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2011.05 - Rev.G
Notice
Notes
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R1120A