ROHM RB160L-60_1

RB160L-60
Diodes
Schottky barrier diode
RB160L-60
zApplications
General rectification
z Land size figure (Unit : mm)
z External dimensions (Unit : mm)
2.0
2.0
2.6±0.2
1.2±0.3
4
②
4.5±0.2
4
①
0.1±0.02
0.1
5.0±0.3
4.2
zFeatures
1) Small power mold type. (PMDS)
2) Low IR.
3) High reliability.
PMDS
2.0±0.2
1.5±0.2
zConstruction
Silicon epitaxial planar
zStructure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
z Taping specifications (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.0 5
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Sym bol
Lim its
Unit
R evers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
VRM
VR
Io
60
60
1
V
V
A
Forward current s urge peak ( 60Hz・ 1cyc )
J unction tem perature
S torage tem perature
IFSM
Tj
Ts tg
30
125
-40 to +125
℃
Param eter
A
℃
(*1) Mounted on epoxy board. 180 ° Half s ine wave
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.58
V
IF=1.0A
Conditions
R evers e current
IR
-
-
1
mA
VR =60V
Rev.B
1/3
RB160L-60
Diodes
zElectrical characteristic curves (Ta=25°C)
10000
1000
Ta=25℃
Ta=-25℃
10
100
10
Ta=25℃
1
Ta=-25℃
0.1
100
10
0.01
0.001
0
200
400
600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1
0
10
20
30
40
50
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
60
0
530
520
510
AVE:529.4mV
500
Ta=25℃
VR=60V
n=30pcs
25
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
540
REVERSE CURRENT:IR(uA)
Ta=25℃
IF=1A
n=30pcs
20
15
10
AVE:3.724uA
5
170
160
Ct DISPERSION MAP
200
AVE:126.0A
0
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
RESERVE RECOVERY TIME:trr(ns)
1cyc
8.3ms
50
180
IR DISPERSION MAP
30
150
Ta=25℃
f=1MHz
VR=0V
n=10pcs
190
150
VF DISPERSION MAP
Ifsm
15
10
AVE:11.7ns
5
Ifsm
150
8.3ms 8.3ms
1cyc
100
50
0
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
t
150
100
50
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
100
Mounted on epoxy board
Rth(j-a)
1.5
100
Rth(j-c)
10
IM=10mA
IF=0.5A
FORWARD POWER
DISSIPATION:Pf(W)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
200
30
AVE:192.4pF
0
200
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
30
550
FORWARD VOLTAGE:VF(mV)
f=1MHz
Ta=75℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
100
1
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
Ta=125℃
1000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
Ta=75℃
D=1/2
1
Sin(θ=180)
DC
0.5
1
1ms
time
300us
0.1
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2
2/3
RB160L-60
Diodes
3
3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
2.5
0.02
Io
0A
0V
t
DC
2
T
VR
D=t/T
VR=30V
Tj=125℃
1.5
Sin(θ=180)
0.01
DC
D=1/2
D=1/2
1
0.5
Sin(θ=180)
0
0
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
20
Io
0A
0V
2.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.03
t
DC
2
1.5
VR
D=t/T
VR=30V
T Tj=125℃
D=1/2
1
0.5
Sin(θ=180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
No break at 30kV
25
20
15
10
5
AVE:8.70kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1