100mA / 50V Digital transistors (with built-in resistors) DTC144GE / DTC144GUA / DTC144GKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) EMT3 0.7 1.6 0.55 0.3 (2) 1.6 (3) 0.8 (1) 0.2 0.2 0.1Min. Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, making the device design easy. 3)Higher mounting densities can be achieved. (SC-75A) <SOT-416> 0.15 0.5 0.5 1.0 (1) GND Each lead has same dimensions (2) IN (3) OUT Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Abbreviated symbol : K26 2.0 UMT3 <SC-70> Packaging specifications DTC144GE DTC144GUA DTC144GKA T106 3000 − − − (1) (2) T146 3000 − − 0.65 0.65 0.15 1.3 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : K26 − 2.9 SMT3 <SC-59> Inner circuit 1.1 0.4 0.8 1.6 2.8 (3) C B 0.1Min. Basic ordering unit (pieces) TL 3000 2.1 EMT3 UMT3 SMT3 Taping Taping Taping R (2) (1) 0.95 0.95 E 0.15 (1) GND (2) IN (3) OUT E : Emitter C : Collector B : Base 1.9 0.3Min. Part No. 0.7 (3) 1.25 Package Packaging type Code 0.9 0.2 0.3 Each lead has same dimensions Abbreviated symbol : K26 R=47kΩ Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Parameter VCBO 50 Collector-emitter voltage VCEO 50 V V Emitter-base voltage VEBO 5 Collector current IC 100 Collector power DTC144GE dissipation DTC144GUA / DTC144GKA Pc V mA 150 mW 200 Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTC144GE / DTC144GUA / DTC144GKA Data Sheet Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 50 5 − − − − − − V V V IC=50μA IC=1mA IE=160μA ICBO − − 0.5 IEBO VCE(sat) 65 − − − 130 0.3 μA μA VCB=50V VEB=4V V IC=10mA, IB=0.5mA hFE 68 32.9 − 47 − 61.1 − kΩ − 250 − MHz BVEBO Emitter-base resistance R Transition frequency ∗ Characteristics of built-in transistor fT ∗ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/2 Conditions IC=5mA , VCE=5V − VCE=10V , IE= −5mA , f=100MHz 2009.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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