Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M12 Application Switching Inner circuit (8) Packaging specifications Type Package Code Basic ordering unit (pieces) QS8M12 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Taping TCR 3000 (7) (6) (5) ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Source current (Body Diode) Limits Tr1 : N-ch Tr2 : P-ch Unit VDSS 30 30 V V VGSS 20 20 Continuous ID 4 4 A Pulsed Continuous IDP Is *1 12 1.0 12 1.0 A A Pulsed Isp *1 12 12 A Gate-source voltage Drain current Symbol Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *2 1.5 W / TOTAL 1.25 150 55 to 150 W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.05 - Rev.A Data Sheet QS8M12 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Conditions 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 30 42 ID=4A, VGS=10V RDS (on)* - 40 56 m ID=4A, VGS=4.5V 45 63 Forward transfer admittance l Yfs l * 2.5 - - S VDS=10V, ID=4A Input capacitance Ciss - 250 - pF VDS=10V Zero gate voltage drain current ID=4A, VGS=4V Output capacitance Coss - 90 - pF VGS=0V Reverse transfer capacitance Crss - 45 - pF f=1MHz Turn-on delay time td(on) * tr * - 7 - ns ID=2A, VDD 15V Rise time - 30 - ns VGS=10V Turn-off delay time td(off) * - 30 - ns RL=7.5 Fall time tf * Qg * Qgs * - 5 - ns RG=10 - 3.4 - nC ID=4A, VDD 15V - 1.2 1.3 - nC nC VGS=5V Total gate charge Gate-source charge Gate-drain charge Qgd * *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=4A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.05 - Rev.A Data Sheet QS8M12 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 30 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V V VDS=10V, ID=1mA Gate threshold voltage VGS (th) 1.0 - 2.5 Static drain-source on-state resistance - 40 56 * RDS (on) ID=4A, VGS=10V - 55 77 m ID=2A, VGS=4.5V - 60 84 Forward transfer admittance l Yfs l* 3 - - S VDS=10V, ID=4A Input capacitance Ciss - 800 - pF VDS=10V ID=2A, VGS=4.0V Output capacitance Coss - 120 - pF VGS=0V Reverse transfer capacitance Crss - 110 - pF f=1MHz Turn-on delay time td(on) * - 8 - ns ID=2A, VDD 15V tr * - 20 - ns VGS=10V td(off) * - 80 - ns RL=7.5 Rise time Turn-off delay time Fall time tf * - 50 - ns RG=10 Total gate charge Qg * - 8.4 - nC ID=4A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 3.0 3.5 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=4A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.05 - Rev.A Data Sheet QS8M12 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 4 4 VGS=2.5V VGS=2.8V VGS=10.0V VGS=4.5V VGS=4.0V 3 VGS=10.0V Drain Current : ID [A] Drain Current : ID [A] 3 VGS=4.5V VGS=4.0V 2 VGS=3.5V VGS=2.5V 1 VGS=3.0V 2 VGS=2.8V 1 Ta=25℃ Pulsed Ta=25℃ Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=10V pulsed Ta=25℃ Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] VGS=4.0V VGS=4.5V VGS=10V 100 10 0.01 0.1 1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.01 10 Drain Current : ID [A] 0.1 1 10 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=4V pulsed VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.01 0.1 1 100 10 0.01 10 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. 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Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 4/10 2011.05 - Rev.A Data Sheet QS8M12 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 10 10 VDS=10V pulsed 1 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0.001 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0.001 0.01 0.1 1 10 0.0 0.5 1.0 Drain Current : ID [A] 2.5 3.0 3.5 100 10 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed Source Current : Is [A] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 Ta=25℃ Pulsed 80 ID=2.0A ID=4.0A 60 40 20 0 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10 1000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed 100 td(off) td(on) Ta=25°C VDD=15V ID=4A Pulsed 8 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] tr 10 6 4 2 0 1 0.01 0.1 1 0 10 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 Total Gate Charge : Qg [nC] 5/10 2011.05 - Rev.A Data Sheet QS8M12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 100 10000 Ta=25°C f=1MHz VGS=0V Operation in this area is limited by RDS(on) (VGS = 10V) Drain Current : ID [ A ] Capacitance : C [pF] 10 1000 Ciss Coss 100 PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Crss DC Operation 0.01 10 0.01 0.1 1 10 0.1 100 1 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r(t) 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.05 - Rev.A Data Sheet QS8M12 〈Tr.2(Pch)〉 Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 4 4 Ta=25°C Pulsed 3 VGS=-4.5V VGS=-4.0V Drain Current : -ID [A] Drain Current : -ID [A] VGS=-10.0V VGS=-10.0V 3 Ta=25°C Pulsed VGS=-2.8V VGS=-3.5V 2 VGS=-3.0V 1 VGS=-4.5V VGS=-4.0V VGS=-3.5V VGS=-2.6V VGS=-3.0V 2 1 VGS=-2.2V VGS=-2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : -VDS [V] 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 Ta=25°C Pulsed VGS=-10V pulsed VGS=-4.0V VGS=-4.5V VGS=-10V Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 10 1 0.01 0.1 1 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.01 100 0.1 1 10 100 Drain Current : -ID [A] Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=-4.5V pulsed VGS=-4V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 100 10 1 0.01 0.1 1 10 10 0.1 1 10 100 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 1 0.01 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 7/10 2011.05 - Rev.A Data Sheet QS8M12 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VDS=-10V pulsed VDS=-10V pulsed Drain Currnt : -ID [A] Forward Transfer Admittance Yfs [S] 10 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 Drain Current : -ID [A] 2.5 3.0 3.5 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 100 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed 10 Source Current : -Is [A] 2.0 Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 ID=-2A 150 ID=-4A 100 50 0 0.01 0.0 0.5 1.0 1.5 0 2.0 2 Source-Drain Voltage : -VSD [V] 4 6 8 10 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 10 tf Gate-Source Voltage : -VGS [V] VDD≒-15V VGS=-10V RG=10Ω Ta=25°C Pulsed td(off) Switching Time : t [ns] 1.5 100 td(on) tr 10 Ta=25°C VDD=-15V ID=-4A Pulsed 8 6 4 2 1 0 0.01 0.1 1 10 100 0 4 6 8 10 12 14 Total Gate Charge : Qg [nC] Drain Current :- ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 8/10 2011.05 - Rev.A Data Sheet QS8M12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Ta=25°C f=1MHz VGS=0V Operation in this area is limited by RDS(on) (VGS = -10V) 10 Drain Current : - ID [ A ] Capacitance : C [pF] Ciss 1000 Coss 100 PW = 100μs PW = 1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse:1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Crss 10 DC Operation 0.01 0.01 0.1 1 10 100 0.1 Drain-Source Voltage : -VDS [V] 1 10 100 Drain-Source Voltage : - VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.05 - Rev.A Data Sheet QS8M12 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse Width VGS ID VDS VGS 10% 50% 90% RL 50% 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A