Data Sheet 4V Drive Nch + Pch MOSFET SH8M14 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). (8) (5) (1) (4) Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) SH8M14 Taping TB 2500 (8) Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP *1 Is Isp *1 PD Tch Tstg *2 Limits Tr1 : N-ch Tr2 : P-ch 30 30 20 20 9 7 36 28 1.6 1.6 36 28 2.0 1.4 150 55 to 150 Unit (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (7) ∗2 (6) (5) ∗2 ∗1 (1) ∗1 (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE V V A A A A W / TOTAL W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.06 - Rev.A Data Sheet SH8M14 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Conditions 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 15 21 ID=9A, VGS=10V * RDS (on) - 18 25 m ID=9A, VGS=4.5V Forward transfer admittance l Yfs l * Zero gate voltage drain current 20 28 5.0 - - S VDS=10V, ID=9A ID=9A, VGS=4V Input capacitance Ciss - 630 - pF VDS=10V Output capacitance Coss - 230 - pF VGS=0V Reverse transfer capacitance Crss - 110 - pF f=1MHz Turn-on delay time td(on) * - 10 - ns ID=4.5A, VDD 15V * - 33 - ns VGS=10V td(off) * - 42 - ns RL=3.3 Rise time tr Turn-off delay time Fall time * - 10 - ns RG=10 Total gate charge Qg * tf - 8.5 - nC ID=9A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 2.3 4.0 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=9A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.06 - Rev.A Data Sheet SH8M14 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 30 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V V VDS=10V, ID=1mA Gate threshold voltage VGS (th) 1.0 - 2.5 Static drain-source on-state resistance - 21.5 29.0 RDS (on)* - 29.0 39.0 - 31.0 40.8 Forward transfer admittance l Yfs l * 6.0 - - S VDS=10V, ID=7A Input capacitance Ciss - 1200 - pF VDS=10V ID=7A, VGS=10V m ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V Output capacitance Coss - 170 - pF VGS=0V Reverse transfer capacitance Crss - 170 - pF f=1MHz Turn-on delay time td(on) * - 12 - ns ID=3.5A, VDD 15V tr * - 40 - ns VGS=10V td(off) * - 80 - ns RL=4.27 Rise time Turn-off delay time Fall time tf * - 65 - ns RG=10 Total gate charge Qg * - 18 - nC ID=7A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 3.5 6.5 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=7A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.06 - Rev.A Data Sheet SH8M14 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 9 9 VGS=10.0V VGS=3.0V VGS=2.8V 8 VGS=4.0V 7 6 VGS=10.0V VGS=4.5V 5 VGS=4.0V 4 3 VGS=2.5V 6 VGS=3.0V 5 VGS=2.8V 4 3 2 2 Ta=25°C Pulsed 1 Ta=25°C Pulsed 1 0 0 0 0.2 0.4 0.6 0.8 0 1 2 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=10V pulsed Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] 100 VGS=4.0V VGS=4.5V VGS=10V 10 1 0.01 0.1 1 10 100 10 1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=4.5V pulsed VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=2.5V 7 Drain Current : ID [A] Drain Current : ID [A] VGS=4.5V 8 100 10 1 0.01 0.1 1 10 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 10 1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 100 Drain Current : ID [A] 4/10 2011.06 - Rev.A Data Sheet SH8M14 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VDS=10V pulsed VDS=10V pulsed Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 Drain Current : ID [A] Fig.9 Source Current vs. Source-Drain Voltage 2.5 3.0 3.5 50 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed 10 Source Current : Is [A] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 Ta=25°C Pulsed 40 ID=4.5A ID=9.0A 30 20 10 0 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10000 10 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed 1000 tf td(off) 100 td(on) Ta=25°C VDD=15V ID=9A Pulsed 8 Gate-Source Voltage : VGS [V] Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] tr 10 6 4 2 0 1 0.01 0.1 1 0 10 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 Total Gate Charge : Qg [nC] 5/10 2011.06 - Rev.A Data Sheet SH8M14 FIg.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25°C f=1MHz VGS=0V PW = 100μs Drain Current : ID [ A ] Capacitance : C [pF] 10 Ciss 1000 Coss 100 PW = 1ms 1 PW = 10ms 0.1 Crss Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 10 DC Operation 0.01 0.01 0.1 1 10 100 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] FIg.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.06 - Rev.A 〈Tr.2(Pch)〉 Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) 7 7 Ta=25°C Pulsed VGS= -3.0V 6 Ta=25°C Pulsed 6 5 VGS= -10V VGS= -4.5V VGS= -4.0V 4 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] Data Sheet SH8M14 3 2 VGS= -2.5V 1 VGS= -10V VGS= -4.5V VGS= -4.0V 5 VGS= -3.0V 3 2 1 0 0 0 0.2 0.4 0.6 0.8 1 0 2 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics 100 1000 Ta=25°C Pulsed 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= -10V Pulsed DRAIN CURRENT : -ID[A] 4 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 VGS= -4.0V VGS= -4.5V VGS= -10V 100 10 1 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1000 VGS= -10V Pulsed VGS= -4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -2.5V 4 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.1 1 10 0.1 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : -ID[A] 7/10 2011.06 - Rev.A Data Sheet SH8M14 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 100 VGS= -4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 1 0.1 VDS= -10V Pulsed 10 DRAIN-CURRENT : -ID[A] 0.1 1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 100 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] VGS=0V Pulsed 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 80 ID= -3.5A 60 ID= -7.0A 40 20 0 0 0.5 1 1.5 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 10000 1000 td(off) GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD= -15V VGS= -10V RG=10W Pulsed tf SWITCHING TIME : t [ns] 10 DRAIN-CURRENT : -ID[A] 100 td(on) 10 tr 1 8 6 4 Ta=25°C VDD= -15V ID= -7.0A RG=10W Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 20 30 TOTAL GATE CHARGE : Qg [nC] 8/10 2011.06 - Rev.A Data Sheet SH8M14 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 10000 1000 Operation in this area is limited by RDS(ON) (VGS= -10V) Ciss DRAIN CURRENT : -ID (A) CAPACITANCE : C [pF] 100 1000 Coss Crss 100 PW =100us 10 PW =1ms 1 PW = 10ms Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 Ta=25°C f=1MHz VGS=0V 10 DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : -VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.06 - Rev.A Data Sheet SH8M14 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.3-2 Switching Waveforms Fig.3-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A