Data Sheet Schottky barrier diode RB060M-30 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 3.5±0.2 ① 2.6±0.1 3.05 Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability PMDU Construction Silicon epitaxial planar 0.9±0.1 Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 30 VR Reverse voltage (DC) 30 2 Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM 55 Junction temperature 150 Tj Storage temperature 55 to 150 Tstg (*1)Tc=65°C MAX. Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 3.71±0.1 1.5MAX Unit V V A A °C °C Conditions Min. Typ. Max. Unit 0.32 0.4 0.45 V IF=1.0A 0.36 0.44 0.49 V IF=2.0A IR - 10 50 μA VR=30V ESD 7 - - kV C=200pF , R=0Ω forward and reverse : 1 time Reverse current ESD break down voltage φ1.0±0.1 8.0±0.2 φ1.55±0.05 4.0±0.1 1.81±0.1 0.25±0.05 1.75±0.1 2.0±0.05 3.5±0.05 4.0±0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 10 f=1MHz Ta=150℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 10000 Ta=75℃ 1000 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 10 0 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 30 0 440 AVE:449.1mV 430 90 70 60 50 40 30 20 AVE:7.26uA 360 340 330 320 0 300 Ct DISPERSION MAP 100 150 AVE:68.2A 100 50 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:9.8ns PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc 8.3ms 200 AVE:374.4pF IR DISPERSION MAP Ifsm 90 Ifsm 80 8.3m 8.3m 1cyc 70 60 50 40 30 20 10 0 0 1 trr DISPERSION MAP IFSM DISPERSION MAP t 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 1000 Mounted on epoxy board IM=10mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 3 IF=0.5A Rth(j-a) 100 1ms D=1/2 time 300us Rth(j-c) 10 1 0.1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 FORWARD POWER DISSIPATION:Pf(W) Ifsm 150 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 200 30 350 30 250 25 Ta=25℃ f=1MHz VR=0V n=10pcs 370 310 VF DISPERSION MAP 300 20 380 10 420 15 390 Ta=25℃ VR=30V n=30pcs 80 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) 450 10 400 100 Ta=25℃ IF=2A n=30pcs 460 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 470 FORWARD VOLTAGE:VF(mV) 100 0.01 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 1 1000 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150℃ Ta=125℃ 1000000 Ta=75℃ PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RB060M-30 2 DC Sin(θ＝180) 1 0 0 1 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2011.04 - Rev.C 5 4 3 DC D=1/2 2 Sin(θ＝180) 1 0 0A 0V 4 Io t DC 3 T VR D=t/T VR=15V Tj=150℃ D=1/2 2 1 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V 5 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 REVERSE POWER DISSIPATION:PR (W) Data Sheet RB060M-30 Io t 4 DC T VR D=t/T VR=15V Tj=150℃ 3 D=1/2 2 Sin(θ＝180) 1 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:13.2kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A