RF101A2S Diodes Fast recovery diode RF101A2S zApplications General rectification zExternal dimensions (Unit : mm) CATHODE BAND (GREEN) 7 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold type. (MSR) 2) Ultra Low VF. 3) Ultra high switching. 4) Low switching loss. 5) High ESD. 3.0±0.2 29±1 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zTaping specifications (Unit : mm) zConstruction Silicon epitaxial planar IVORY H2 BLUE A H2 記号 Mark E B C Stabdard dimension 寸法規格値(mm) value (mm) T-31 52.4±1.5 Ａ T-32 26.0+0.4 -0 Ｂ 5.0±0.5 Ｃ 0.5ＭＡＸ Ｄ 0 Ｅ 50.4±0.4 Ｆ 0.3ＭＡＸ H1 6.0±0.5 H2 5.0±0.5 L1-L2 0.6ＭＡＸ ＊H1(6mm)：BROWN L2 L1 F H1 H1 D cf : cumulative pitch tolerance w ith 20 pitch than ±1.5mm 注) 累積ピッチの許容差は20ピッチで±1.5mm以下とする zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （t=100µs） Junction temperature Tj Storage temperature Tstg Limits 200 200 1 20 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Min. - Typ. 0.815 0.01 12 Max. 0.87 10 25 Unit V µA ns Conditions IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 RF101A2S Diodes zElectrical characteristic curves 1 Ta=150℃ 10000 100 Ta=125℃ REVERSE CURRENT:IR(nA) Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=75℃ 100 Ta=25℃ 10 0.1 10 0.01 0.001 0 1 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 100 REVERSE CURRENT:IR(nA) 840 830 820 AVE:818.6mV 810 800 Ta=25℃ VR=200V n=30pcs 80 60 50 40 30 AVE:11.1nA 20 70 60 50 40 AVE:51.4pF 30 20 10 10 0 0 Ct DISPERSION MAP 1000 30 RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 100 50 AVE:63.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:12.2ns 5 Ifsm 8.3ms 8.3ms 1cyc 100 0 0 30 Ta=25℃ f=1MHz VR=0V n=10pcs 80 IR DISPERSION MAP 200 25 90 70 VF DISPERSION MAP 150 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 90 Ta=25℃ IF=1A n=30pcs 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 850 FORWARD VOLTAGE:VF(mV) Ta=-25℃ 1 Ta=-25℃ PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) f=1MHz f=1MHz 1000 Ta=150℃ 10 1 1 trr DISPERSION MAP IFSM DISRESION MAP 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 2 IF=0.5A Rth(j-a) IM=1mA 100 time(s) td=300us Rth(j-l) Rth(j-c) 10 1 0.001 DC 1.5 FORWARD POWER DISSIPATION:Pf(W) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 D=1/2 Sin(θ＝180) 1 0.5 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RF101A2S Diodes 30 3 2 DC t t V VR D=t/ D=t/T VR=100V T T Tj=150℃ D=1/2 1 Sin(θ＝180) 0 0 25 50 75 0A0 0V0 Io 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 Io t t 2 DC VR D=t/T T VR=100V T Tj=150℃ D=1/2 1 Sin(θ＝180) No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 25 20 AVE:22.6kV 15 10 5 0 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1