RF101L4S Diodes Fast recovery diode RF101L4S zApplications General rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 2.0 zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Ultra high switching speed 4) Low switching loss zConstructure Silicon epitaxial planar ② 0.1±0.02 0.1 4.2 5.0±0.3 ① 1.2±0.3 6 4.5±0.2 6 2.0 2.6±0.2 2.0±0.2 1.5±0.2 PMDS zStructure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date zTaping dimensions (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 400 400 1 20 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ (*1)Mounting on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. - Max. 1.25 Unit V - - 10 µA trr - - 25 ns Conditions IF=1.0A VR=400V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 RF101L4S Diodes zElectrical characteristic curves 1 10000 100 f=1MHz Ta=75℃ Ta=150℃ Ta=25℃ Ta=-25℃ 0.01 200 400 600 800 1000 Ta=25℃ 10 Ta=-25℃ 1 1 0 1300 50 100 150 200 250 300 350 400 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 AVE:1007mV 900 400 350 300 250 200 150 AVE:24.8nA 100 800 70 AVE:41.8pF 40 30 20 10 0 Ct DISPERSION MAP 8.3ms 100 AVE:48.0A 50 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 150 AVE:18.4ns 10 5 0 0 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 t 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 3 DC 1m 100 100 IF=100mA tim 2.5 Rth(j-a) D=1/2 300u Rth(j-c) 10 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm IM=10mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 Ta=25℃ f=1MHz VR=0V n=10pcs 50 0 30 1cyc 30 60 IR DISPERSION MAP Ifsm 25 80 50 VF DISPERSION MAP 200 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 90 Ta=25℃ VR=400V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1100 5 100 450 REVERSE CURRENT:IR(nA) 1200 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 500 Ta=25℃ IF=1A n=30pcs 10 0.1 1200 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) Ta=75℃ 100 0.001 0 Ta=125℃ 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=150℃ 2 Sin(θ＝180) 1.5 1 0.5 0.1 0.001 0 0.1 10 1000 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS 2/3 RF101L4S Diodes 2 D=1/2 T VR D=t/T VR=200V Tj=150℃ DC 1 Sin(θ＝180) Io t T 2 VR D=t/T VR=200V Tj=150℃ 1 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 150 25 AVE：16.3kV 20 15 10 AVE：4.60kV 5 0 0 ELECTROSTATIC DISCHARGE TEST ESD(KV) t 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 3 Io 0A 0V 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1