2.5V Drive Nch+SBD MOSFET ES6U41 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 Features 1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. (5) (4) (1) (2) (3) Abbreviated symbol : U41 Applications Switching Package specifications Inner circuit Package Type (6) Taping Code T2R Basic ordering unit (pieces) 8000 (6) (4) (5) ES6U41 ∗2 ∗1 (1) Absolute maximum ratings (Ta=25C) ∗1 ESD protection diode ∗2 Body diode <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 30 ±12 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain Unit V V A A A A ±1.5 ±6.0 0.75 6.0 ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM Forward current surge peak Junction temperature Power dissipation Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cycle ∗2 Mounted on ceramic board <MOSFET and Di> Parameter Symbol Power dissipation Range of storage temperature PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 1/4 2012.02 - Rev.B Data Sheet ES6U41 Electrical characteristics <MOSFET> Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. Max. − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 ±10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL 20Ω RG= 10Ω VDD 15V, VGS= 4.5V ID= 1.5A, RL 10Ω RG= 10Ω ∗Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Forward voltage Typ. Max. VSD − − 1.2 Unit V Conditions Symbol Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 μA VR= 20V IS= 0.75A, VGS=0V <Di> Parameter Forward voltage VF Reverse current IR www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/4 2012.02 - Rev.B Data Sheet ES6U41 Electrical characteristics curves <MOSFET> 2 1.5 1 VGS= 1.7V VGS= 1.6V 0.5 1.5 VGS= 1.7V 1 VGS= 1.6V 0.5 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] 100 VGS= 2.5V VGS= 4.0V VGS= 4.5V 10 1 8 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 10 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 2.0 VGS= 4.0V Pulsed DRAIN-CURRENT : ID[A] VGS= 2.5V Pulsed www.rohm.com 1 1.5 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 c 2012 ROHM Co., Ltd. All rights reserved. ○ 1.0 Fig.3 Typical Transfer Characteristics 1000 100 DRAIN-CURRENT : ID[A] 1 0.01 0.001 0.5 10 VGS= 4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 6 1000 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Pulsed 0.01 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 0.01 4 REVERSE DRAIN CURRENT : Is [A] 0 VDS= 10V Pulsed VGS= 1.5V 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= 1.8V Ta=25°C Pulsed 1000 10 Ta=25°C Pulsed VGS= 10V VGS= 2.5V VGS= 2.2V DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 2.2V VGS= 1.8V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 2 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2012.02 - Rev.B Data Sheet ES6U41 1000 800 ID= 1.50A 600 ID= 0.75A 400 200 5 td(off) 100 tf 10 tr td(on) 0 Ta=25°C VDD= 15V VGS= 4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 1 0 2 4 6 8 10 0.01 0.1 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 10 4 3 2 Ta=25°C VDD= 15V ID= 1.5A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 2 DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics CAPACITANCE : C [pF] 1000 Ciss 100 Crss 10 Coss Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage <Di> 1 pulsed pulsed 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 FORWARD CURRENT : IF (A) (A) REVERSE CURRENT ::IIRF (A) 100000 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 0 REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/4 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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