POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using AlN substrate *Contact screws avaliable on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 ADS1000 Repetitive voltage up to Mean on-state current Surge current 1000 V 950 A 23. kA FINAL SPECIFICATION mar 01 - ISSUE : 1 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 1000 V V RSM Non-repetitive peak reverse voltage 150 1100 V I RRM Repetitive peak reverse current 150 50 mA 950 A CONDUCTING I F (AV) Mean on-state current 180° sin, 50Hz, Tc=100°C I F (AV) Mean on-state current 180° sin. 50Hz, Tc=55°C I FSM Surge on-state current sine wave, 10 ms I² t without reverse voltage V F On-state voltage On-state current = V F(TO) r F R th(j-c) Thermal impedance Junction to case, per element 50 °C/kW R th(c-h) Thermal impedance Case to heatsink, per element 20 °C/kW T j Operating junction temperature -30 / 150 °C V ins RMS insulation voltage 50Hz, circuit to base,all terminal shorted Mounting tourque Case to heatsink Busbars to terminals I² t 150 1800 A 1540 A 23 kA 2645 x1E3 A²s 25 1.1 V Threshold voltage 150 0.75 V On-state slope resistance 150 0.125 mohm MOUNTING T Mass ORDERING INFORMATION : ADS1000 S 10 standard specification VRRM/100 25 4500 V 4 to 6 12 to 18 1500 Nm Nm g ADS1000 RECTIFIER SINGLE DIODES MODULE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mar 01 - ISSUE : 1 DISSIPATION CHARACTERISTICS SQUARE WAVE Tcase [°C] 150 140 130 120 110 100 60° 30° 90° 120° 180° DC 90 0 200 400 600 800 1000 1200 IF(AV) [A] PF(AV) [W] 1200 DC 1000 180° 120° DC 90° 800 60° 30° 600 400 200 0 0 200 400 600 IF(AV) [A] 800 1000 1200 ADS1000 RECTIFIER SINGLE DIODES MODULE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mar 01 - ISSUE : 1 DISSIPATION CHARACTERISTICS SINE WAVE Tcase [°C] 150 140 130 120 110 30° 60° 100 90° 120° 180° 90 0 200 400 600 800 1000 IF(AV) [A] PF(AV) [W] 1200 1000 DC 120° 180° 90° 800 60° 30° 600 400 200 0 0 200 400 600 IF(AV) [A] 800 1000 ADS1000 RECTIFIER SINGLE DIODES MODULE FINAL SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation mar 01 - ISSUE : 1 SURGE CHARACTERISTIC Tj = 150 °C ON-STATE CHARACTERISTIC Tj = 150 °C 25 3000 2500 20 2000 ITSM [kA] On-state Current [A] POSEICO 1500 15 10 1000 5 500 0 0 0.5 0.7 0.9 1.1 1.3 1.5 On-state Voltage [V] 1 10 n° cycles TRANSIENT THERMAL IMPEDANCE 60.0 Zth j-c [°C/kW] 50.0 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100