ROHM RB215T

Data Sheet
Schottky barrier diode
RB215T-60
Applications
Switching power supply
Dimensions (Unit : mm)
Structure
4.5±0.3
0.1
2.8±0.2
0.1
10.0±0.3
0.1
8.0±0.2
12.0±0.2
5.0±0.2
①
1.2
13.5MIN
Construcion
Silicon epitaxal planar
15.0±0.4
0.2
8.0
(1) (2) (3)
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
Manufacture Date
①
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
60
VRM
60
VR
20
Io
100
IFSM
150
Tj
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116C
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
Storage temperature
Elecrical characteristic(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Unit
V
V
A
A
C
C
Symbol
VF
Min.
Typ.
Max.
-
-
0.58
V
IR
-
-
600
μA
 jc
-
-
1.75
C/W
1/3
Unit
Conditions
IF=10A
VR=60V
junction to case
2011.04 - Rev.C
Data Sheet
RB215T-60
Electrical characteristics curves
1000000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:I F(A)
Ta=150C
Ta=125C
1
Ta=-25C
Ta=75C
Ta=25C
0.1
Ta=150C
10000
Ta=125C
f=1MHz
100000
10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
Ta=75C
1000
Ta=25C
100
10
Ta=-25C
1000
100
10
1
0.01
0
100
200
300
400
500
1
0.1
600
0
10
20
30
40
50
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
Ta=25C
VR=30V
n=30pcs
900
520
510
AVE:515.0mV
500
800
700
600
500
400
300
AVE:140.7uA
200
1700
1600
AVE:1704.1pF
0
1500
VF DISPERSION MAP
IR DISPERSION MAP
8.3ms
200
150
100
50
AVE:166.0A
0
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1cyc
Ifsm
250
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ct DISPERSION MAP
30
300
15
10
5
AVE:23.3ns
0
Ifsm
8.3ms 8.3ms
100
1cyc
10
1
1
100
Mounted on epoxy board
IF=5A
100
10
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
time
300us
Rth(j-c)
1
0.1
0.001
D=1/2
Rth(j-a)
1ms
10
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
t
100
30
IM=100mA
Ifsm
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
30
1800
100
490
25
Ta=25C
f=1MHz
VR=0V
n=10pcs
1900
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
530
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
2000
1000
Ta=25C
IF=10A
n=30pcs
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:V F(mV)
540
0
60
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
DC
Sin(=180)
20
10
0
0
10
20
30
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
40
2011.04 - Rev.C
Data Sheet
RB215T-60
15
50
50
Io
10
D=1/2
DC
Sin(=180)
5
0V
40
VR
t
DC
T
30
D=t/T
VR=30V
Tj=150C
D=1/2
20
10
10
20
30
40
50
60
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
VR
T
DC
D=t/T
VR=30V
Tj=150C
30
D=1/2
20
10
Sin(=180)
0
0
Io
0V
40
Sin(=180)
0
0A
t
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0A
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
AVE:7.50kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.C
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Notes
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R1120A