Data Sheet Schottky Barrier Diode RSX101M-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3)High reliability 3.5±0.2 3.05 Features 1)Small power mold type. (PMDU) 2)Low VF, Low IR PMDU Construction Silicon epitaxial Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 30 1 45 150 40 to 150 8.0±0.2 φ1.0±0.1 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX Unit V V A A °C °C (*1)Mounting on epoxi board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current Capacitance between terminals ESD breakdown voltage IR Ct ESD www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Min. Typ. Max. Unit Conditions - 0.35 90 60.0 12.0 0.39 200 - V μA pF kV IF=1A VR=30V VR=10V , f=1MHz 1/3 C=200pF ,R=0Ω 2011.05 - Rev.C Data Sheet RSX101M-30 0.1 Ta=25℃ Ta=-25℃ 0.01 Ta=75℃ 1000 Ta=25℃ 100 10 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 30 350 340 AVE:349.9mV 800 700 600 500 400 300 AVE:103.1uA 200 320 310 300 290 280 270 260 0 250 VF DISPERSION MAP AVE:300.1pF IR DISPERSION MAP 200 Ct DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 30 1cyc Ifsm 150 330 100 330 8.3ms 100 50 AVE:66.0A 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 0 AVE:8.30ns 90 Ifsm 80 70 8.3ms 8.3ms 1cyc 60 50 40 30 20 10 0 0 1 1000 Rth(j-a) 100 t 60 50 40 30 20 10 0 1 IF=0.5A 1ms 0.8 time 300us Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 0.001 D=1/2 0.6 Sin(θ＝180) 0.4 DC 0.2 0 0.1 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 70 100 Mounted on epoxy board IM=10mA 90 80 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISPERSION MAP 100 30 Ta=25℃ f=1MHz VR=0V n=10pcs 340 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 360 Ta=25℃ VR=30V n=30pcs 900 PEAK SURGE FORWARD CURRENT:IFSM(A) 370 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 1000 Ta=25℃ IF=1A n=30pcs 10 1 0.1 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) Ta=-25℃ 100 1 500 380 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ 10000 0.001 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=150℃ 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ Ta=150℃ 0 1000 1000000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.05 - Rev.C Data Sheet RSX101M-30 3 3 1.5 1 D=1/2 DC 0.5 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0A 0V 2.5 2 DC Io t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 2 VR D=t/T VR=15V Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0A 0V 2.5 2 Io t DC T 1.5 VR D=t/T VR=15V Tj=150℃ D=1/2 1 Sin(θ＝180) 0.5 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:10.8kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A