Schottky Barrier Diode RB471E Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) 2.9±0.2 0.15±0.1 0.06 Each lead has same dimension ＋0.1 0.3 －0.05各リードとも同寸法 0.35 0.45 0.6 1.6 2.8±0.2 0.45 0.35 (2) ＋0.2 －0.1 (1) Features 1) Small mold type. (SMD5) 2) High reliability. 2.4 1.0MIN. 0.8MIN. 0.95 0.95 (4) (3) 0.8±0.1 1.9±0.2 0.95 0.3～0.6 0～0.1 (5) 0.95 SMD5 1.1±0.2 0.1 Construction Silicon epitaxial planar 1.9 Structure ROHM : SMD5 JEITA : SC-74A week code Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ1.0MIN 4.0±0.1 3.2±0.1 Limits 40 40 0.1 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 3.2±0.1 8.0±0.2 5.5±0.2 0～0.5 3.2±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V A A °C °C (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF 1 VF 2 IR Min. Typ. Max. Unit - - 0.55 0.34 30 V V μA IF=100mA IF=10mA VR=10V Ct - - 6 pF VR=10V , f=1MHz 1/3 2011.04 - Rev.B Data Sheet RB471E 100 100 10000 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0 100 200 300 400 500 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 35 450 440 430 AVE:439.5mV 290 280 270 AVE:281.5mV 260 7 6 5 AVE:5.10pF 4 3 2 Ifsm 1cyc 15 8.3ms 10 5 AVE:5.50A 0 0 Ct DISPERSION MAP 10 AVE:2.548uA 5 15 10 5 AVE:6.20ns trr DISPERSION MAP 1000 8.3ms 8.3ms 1cyc 5 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc Ifsm 8.3ms 10 5 0 www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 20 0 15 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 IFSM DISRESION MAP 15 0.1 15 30 1 10 20 IR DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 8 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ f=1MHz VR=10V n=10pcs 100 Ta=25℃ VR=10V n=10pcs 0 20 9 30 25 VF DISPERSION MAP 10 20 30 Ta=25℃ IF=10mA n=30pcs 300 VF DISPERSION MAP 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE CURRENT:IR(uA) 460 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 5 310 Ta=25℃ IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.1 1 10 TIME:t(s) IFSM-t CHARACTERISTICS 2/3 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA 1ms 1 0.001 IF=10mA time 300us 0.1 10 TIME:t(ms) Rth-t CHARACTERISTICS 1000 2011.04 - Rev.B Data Sheet RB471E 0.1 DC Sin(θ＝180) 0.04 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) D=1/2 Per chip Per chip 0.06 0.08 0.05 Sin(θ＝180) 0.04 D=1/2 0.03 DC 0.02 0.01 0 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 0.25 0.2 0.2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0.25 0.2 Io 0A 0V t DC T VR D=t/T VR=15V Tj=125℃ 0.15 0.1 0.05 D=1/2 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Io 0A 0V Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0.07 Per chip t T DC VR D=t/T VR=15V Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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