Midium Power Transistors (±50V / ±1A) MP6Z12 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) V CE (sat) = -0.40V (Max.) (I C / I B= -500mA / -25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 2) High speed switching Applications Low Frequency Amplifier Driver Packaging specifications Type Emitter Base Collector Emitter Base Collector (6) (5) (4) (1) (2) (3) Inner circuit (Unit : mm) Package MPT6 Code TR Basic ordering unit (pieces) 1000 (6) (5) (4) Tr.2 Absolute maximum ratings (Ta = 25C) <Tr.1> Symbol Limits Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage Emitter-base voltage VCEO 50 6 1 2 V V A A Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage Emitter-base voltage VCEO VEBO IC ICP *1 -50 -6 V V -1 -2 A A Collector current DC Pulsed VEBO IC ICP *1 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector Tr.1 (1) (2) (3) <Tr.2> Parameter Collector current DC Pulsed <Tr.1 and Tr.2> Parameter Power dissipation Junction temperature Range of storage temperature Symbol PD *2 Limits Unit 2.0 1.4 W/Total W/Element PD *2 Tj 150 Tstg -55 to 150 C C *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/7 2010.11 - Rev.A MP6Z12 Data Sheet Electrical characteristics (Ta=25°C) <Tr.1> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 - - V IC= 1mA Collector-base breakdown voltage BVCBO 50 - - V IC= 100μA Emitter-base breakdown voltage Parameter Conditions BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 50V Emitter cut-off current IEBO - - 1 A VEB= 4V VCE(sat) - 130 350 hFE 180 - 450 - - 360 - MHz Cob - 7 - pF Turn-on time ton *2 - 40 - ns Storage time tstg *2 - 410 - ns t f *2 - 75 - ns Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO -50 - - V IC= -1mA Collector-base breakdown voltage BVCBO -50 - - V IC= -100μA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100μA Collector cut-off current ICBO - - -1 A VCB= -50V Emitter cut-off current IEBO - - -1 A VEB= -4V *1 VCE(sat) - -200 -400 hFE 180 - 450 - VCE= -2V, I C= -50mA - 400 - MHz VCE= -10V IE=200mA, f=100MHz Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Fall time *1 fT *1 mV IC= 500mA, I B= 25mA VCE= 2V, IC= 50mA VCE= 10V IE=-200mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 0.5A, I B1= 50mA, IB2=-50mA, V CC~ _ 10V *1 Pulsed *2 See switching time test circuit <Tr.2> Parameter Collector-emitter staturation voltage DC current gain Transition frequency fT *1 mV IC= -500mA, I B= -25mA Collector output capacitance Cob - 12 - pF Turn-on time ton *2 - 40 - ns Storage time tstg *2 - 250 - ns t f *2 - 35 - ns Fall time Conditions VCB= -10V, I E=0A f=1MHz IC= -0.5A, I B1= -50mA, _ -10V IB2=50mA, VCC~ *1 Pulsed *2 See switching time test circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/7 2010.11 - Rev.A MP6Z12 Data Sheet Electrical characteristic curves (Ta = 25C) <Tr.1> Fig.1 Typical Output Characteristics 5mA 4mA 3.0mA 2.5mA Fig.2 DC Current Gain vs. Collector Current 2.0mA 0.5 1000 Ta=25°C COLLECTOR CURRENT : IC[A] DC CURRENT GAIN : hFE 1.5mA 0.4 0.3 1.0mA 0.2 VCE=5V 2V 100 IB=0.5mA 0.1 Ta=25°C 0.0 10 0 0.5 1 1.5 2 1 10 COLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.3 DC Current Gain vs.Collector Current ( II ) 1000 10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 1 VCE=2V DC CURRENT GAIN :hFE 100 COLLECTOR CURRENT : IC[mA] Ta=125°C 100 75°C 25°C -40°C 10 0.1 IC/IB=50 20 10 0.01 Ta=25°C 0.001 1 10 100 1000 10000 1 10 COLLECTOR CURRENT : IC[mA] 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(II) Fig.6 Ground Emitter Propagation Characteristics 10000 1 COLLECTOR CURRENT :IC[mA] COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] VCE=2V 0.1 0.01 Ta=125°C 75°C 1000 Ta=125°C 75°C 25°C 100 -40°C 10 25°C -40°C IC/IB=20 0.001 1 1 10 100 1000 0 10000 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE[V] COLLECTOR CURRENT : IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.2 3/7 2010.11 - Rev.A MP6Z12 Data Sheet Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 1000 100 Ta=25°C VCE=10V TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob[pF] EMITTER INPUT CAPACITANCE : Cib[pF] Ta=25°C f=1MHz IE=0A IC=0A Cib 10 100 Cob 10 1 0.1 1 10 10 100 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area COLLECTOR CURRENT : IC [A] 10 1ms 1 10ms 100ms DC Ta=25°C (Mounted on a recommended land) 0.1 Ta=25°C When on element operated Single non repetitive pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE :VCE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.11 - Rev.A MP6Z12 Data Sheet <Tr.2> Fig.1 Typical Output Characteristics -5.0mA -4.0mA Fig.2 DC Current Gain vs. Collector Current ( I ) -3.0mA 1000 -0.5 -2.5mA -0.4 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] Ta=25°C -2.0mA -0.3 -1.5mA -0.2 -1.0mA -0.1 VCE= -5V -2V 100 IB=-0.5mA 10 0.0 0 -0.5 -1 -1.5 -1 -2 -10 -1000 -10000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) Fig.3 DC Current Gain vs. Collector Current ( II ) 1000 -1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE= -2V DC CURRENT GAIN : hFE -100 Ta=125°C 100 75°C 25°C -40°C 10 Ta=25°C -0.1 IC/IB=50 20 10 -0.01 -0.001 -1 -10 -100 -1000 -10000 -1 -10 -100 -1000 -10000 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) Fig.6 Ground Emitter Propagation Characteristics -10000 -1 VCE= -2V COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] IC/IB=20 -0.1 Ta=125°C 75°C -0.01 25°C -40°C -1000 Ta=125°C -100 75°C 25°C -40°C -10 -1 -0.001 -1 -10 -100 -1000 0 -10000 COLLECTOR CURRENT : IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. -0.5 -1 BASE TO EMITTER VOLTAGE : VBE[V] 5/7 2010.11 - Rev.A MP6Z12 Data Sheet Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs.Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C VCE= -10V Ta=25°C f=1MHz IE=0A IC=0A TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 100 Cib 10 Cob 100 10 1 -0.1 -1 -10 10 -100 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area -10 1ms COLLECTOR CURRENT : IC [A] 10ms -1 100ms -0.1 DC (Mounted on a ceramic board) -0.01 Ta=25°C When on circuit operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 6/7 2010.11 - Rev.A MP6Z12 Data Sheet Switching time test circuit RL=20Ω <Tr.1> I B1 VIN IC V CC ~ _ 10V IB2 Pw ~ _50μs DUTY CYCLE≦1% Pw BASE CURRENT WAVEFORM I B1 I B2 COLLECTOR CURRENT WAVEFORM t on tstg tf 90% IC 10% <Tr.2> RL=20Ω IB1 VIN Pw IC VCC~_ -10V IB2 _ 50μs Pw ~ DUTY CYCLE≦1% IB2 BASE CURRENT WAVEFORM IB1 ton COLLECTOR CURRENT WAVEFORM tstg tf 90% IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 7/7 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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