Power management (dual transistors) VT6Z2 0.14 VMT6 (4) 0 ~ 0.05 0.14 (1) (2) (3) 0.16 ± 0.05 0.13 ± 0.05 0.4 0.4 0.8 ± 0.1 zApplications Switch, LED driver Abbreviated symbol : Z2 UNIT : mm Each lead has same dimensions. zPackaging specifications Package Type 0.2 ± 0.1 1.2 ± 0.1 (5) 0.92 ± 0.1 zFeatures Very small package with two transistors. 0.5 ± 0.1 1.2 ± 0.1 (6) 0.2 ± 0.1 zDimensions (Unit : mm) zStructure Silicon epitaxial planar transistor zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (5) Tr1 (4) Tr2 VT6Z2 (1) (2) (3) (1) Emitter (2) Base (3) Collector (4) Emitter (5) Base (6) Collector (Tr1) (Tr1) (Tr2) (Tr2) (Tr2) (Tr1) z Absolute maximum ratings (Ta=25°C) <Tr1> (PNP) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA ∗1 −200 mA Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Parameter Collector current ICP ∗1 Pw=1mS Single pulse <Tr2> (NPN) Parameter IC Collector current ICP 100 mA 200 mA Limits 150 Unit mW 120 mW 150 −55 to +150 °C ∗1 ∗1 Pw=1mS Single pulse <Tr1 and Tr2> Symbol Parameter Total Power dissipation Element PD Junction temperature Tj Storage temperature Tstg ∗2 °C ∗2 Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.10 - Rev.A VT6Z2 Data Sheet zElectrical characteristics (Ta=25°C) <Tr1> (PNP) Parameter Symbol Min. Typ. Max. Unit BVCEO BVCBO −50 − − −50 − − V V IC= −1mA IC= −50µA BVEBO −5 − V IE= −50µA Collector cut-off current ICBO − − − −0.1 µA Emitter cut-off current IEBO − −0.1 −0.15 − −0.40 VCB= −50V VEB= −5V IC= −50mA, IB= −5mA − − MHz − pF Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage VCE(sat) − − DC current gain hFE 120 Transition frequency Output capacitance fT Cob − − 300 2 Symbol Min. Typ. Max. Unit BVCEO BVCBO 50 50 − − − − V V − 0.1 Collector-emitter saturation voltage 560 µA V Conditions VCE= −6V, IC= −1mA VCE= −10V, IE=−10mA, f=100MHz VCB= −10V, IE=0A, f=1MHz <Tr2> (NPN) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage BVEBO 5 − Collector cut-off current ICBO Emitter cut-off current IEBO − − VCE(sat) − − − DC current gain hFE 120 Transition frequency Output capacitance fT Cob − Collector-emitter saturation voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ − 0.1 V IE=50µA VCB=50V VEB=5V IC=50mA, IB=5mA VCE=6V, IC=1mA 0.30 350 1.6 − − MHz − pF 2/4 IC=1mA IC=50µA µA µA V 0.10 − 560 Conditions VCE=10V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2009.10 - Rev.A VT6Z2 Data Sheet zElectrical characteristics curves <Tr1> (PNP) IB=450uA IB=400uA IB=350uA IB=300uA -50 VCE =2V Ta=125 C 25 C -55 C -10 -1 -0.1 -40 IB=200uA -30 IB=150uA -20 IB=100uA -10 IB=50uA -0.6 -0.8 -1 0 -1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB = 20/1 IC/IB = 10/1 -0.1 -2 -3 -4 IB=0uA -1 -10 -100 COLLECTOR CURRENT : IC (mA) 10 -0.1 -5 IC/IB = 10/1 Ta=125 C 25 C -55 C -0.1 -0.01 -0.01 Ta=125 C 25 C -55 C -1 -10 -100 COLLECTOR CURRENT : IC (mA) -1 -10 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) -1 Ta=25 C -1 TRANSITION FREQUENCY :fT (MHz) -0.4 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25 C 0 -0.2 VCE=5V 100 -0.01 0 1000 IB=250uA DC CURENT GAIN : hFE -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) IB=500uA 1000 VCE = 10V Ta = 25 C 100 10 -0.1 -1 -10 -100 -1000 EMITTER CURRENT ：IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0.1 Ta=25 C f=1MHz IE=0 IC=0 -0.01 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/4 2009.10 - Rev.A VT6Z2 Data Sheet <Tr2> (NPN) 0.1 VCE =2V 0.01 0 0.2 0.4 0.6 0.8 40 IB=250uA 20 IB=150uA IB=100uA 0 0.1 0.01 10 100 COLLECTOR CURRENT : IC (mA) 2 3 4 100 Ta=125°C 25°C -55°C 5 10 IB=0A 0.1 1000 IC/IB= 10/1 Ta=125°C 25°C -55°C 0.1 0.01 1 10 100 COLLECTOR CURRENT : IC (mA) 1 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1 IC/IB = 20/1 IC/IB =10/1 1 VCE=5V IB=50uA Ta=25°C 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IB=200uA 0 Ta=25°C 1 30 10 BASE TO EMITTER VOLTAGE : VBE (V) 1 IB=300uA DC CURENT GAIN : hFE 1 1000 IB=350uA TRANSITION FREQUENCY :fT (MHz) Ta=125°C 25°C -55°C 10 IB=450uA IB=500uA IB=400uA 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 VCE = 10V Ta=25°C 100 10 0.1 1 10 100 1000 EMITTER CURRENT : IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0 Ta=25°C f=1MHz IE=0 IC=0 0.01 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.10 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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