ROHM EMZ7T2R

General purpose transistor (dual transistors)
EMZ7 / UMZ7N
Dimensions (Unit : mm)
1.25
Abbreviated symbol : Z7
0to0.1
2.0
1.3
0.9
0.7
0.15
2.1
0.1Min.
ROHM : EMT6
0.65
(1)
(6)
(1)
Each lead has same dimensions
Structure
NPN / PNP epitaxial planar silicon transistor
(2)
(5)
0.2
(2)
1.2
1.6
0.13
(6)
0.5 0.5
1.0
1.6
(5)
0.5
0.22
(3)
(4)
0.65
UMZ7N
(4)
EMZ7
(3)
Features
1) Both a 2SA2018 chip and 2SC5585 chip in
a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low VCE(sat)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z7
Inner circuit
EMZ7 / UMZ7N
(3)
(2)
(1)
Tr1
Tr2
(4)
(5)
(6)
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Tr1
Tr2
Unit
Collector-base voltage
VCBO
15
−15
V
Collector-emitter voltage
VCEO
12
−12
V
Emitter-base voltage
VEBO
6
−6
V
IC
500
−500
mA
ICP
1
−1
A
Collector power dissipation
PC
150(TOTAL)
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current
∗1
∗
1 120mW per element must not be exceeded.
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
○
1/4
2012.06 - Rev.B
EMZ7 / UMZ7N
Data Sheet
 Electrical characteristics (Ta=25C)
Tr1 (NPN)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
15
−
−
V
IC= 10μA
Collector-emitter breakdown voltage
BVCEO
12
−
−
V
IC= 1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE= 10μA
ICBO
−
−
0.1
μA
VCB= 15V
Parameter
Collector cutoff current
IEBO
−
−
0.1
μA
VEB= 6V
VCE(sat)
−
90
250
mV
IC/IB= 200mA /10mA
hFE
270
−
680
−
Emitter cutoff current
Collector-emitter saturation voltage
Conditions
DC current transfer ratio
VCE/IC= 2V/10mA
fT
−
320
−
MHz
Cob
−
7.5
−
pF
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−15
−
−
V
IC= −10μA
Collector-emitter breakdown voltage
BVCEO
−12
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE= −10μA
ICBO
−
−
−0.1
μA
VCB= −15V
Transition frequency
Output capacitance
VCE= 2V, IC= −10mA, f= 100MHz
VCB= 10V, IE= 0A, f= 1MHz
Tr2 (PNP)
Parameter
Collector cutoff current
IEBO
−
−
−0.1
μA
VEB= −6V
VCE(sat)
−
−100
−250
mV
IC/IB= −200mA/−10mA
hFE
270
−
680
−
fT
−
260
−
MHz
Cob
−
6.5
−
pF
Emitter cutoff current
Collector-emitter saturation voltage
Conditions
DC current transfer ratio
Transition frequency
Output capacitance
VCE/IC= −2V/−10mA
VCE= −2V, IC= 10mA, f= 100MHz
VCB= −10V, IE= 0A, f= 1MHz
Packaging specifications
Taping
Packaging type
Code
Part No.
Basic ordering unit (pieces)
TR
T2R
3000
8000
−
UMZ7N
EMZ7
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
○
−
2/4
2012.06 - Rev.B
EMZ7 / UMZ7N
Data Sheet
VCE=2V
1000
DC CURRENT GAIN : hFE
200
100
10
−40°C
25°C
20
25°C
50
5
−40°C
200
100
50
20
10
5
2
2
1
0
0.5
1.0
1
1.5
1
Fig.1 Grounded emitter propagation
characteristics
5 10 20
50 100 200 500 1000
100
50
20 IC/IB=50
10
20
10
5
2
1
2
5 10 20
50 100 200 5001000
IC/IB=20
5000
100
50
Ta=125°C
20
−40°C
25°C
10
5
2
1
1
2
500
25°C
125°C
2000
50 100 200 5001000
500
200
VCE=2V
Ta=25˚C
Pulsed
200
100
1000
50
20
100
10
50
5
20
2
10
5 10 20
1000
Ta=−40°C
1
1
2
5 10 20
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
Fig.5 Base-emitter saturation voltage
vs. collector current
1000
200
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
fT (MHZ)
200
BASE SATURATION VOLTAGE : VBE (sat) (mV)
Ta=25°C
500
IC/IB=20
500
COLLECTOR CURRENT : IC(mA)
Fig.2 DC current gain vs.
collector current
10000
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
2
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
1
VCE=2V
Ta=125°C
25°C
500
500
Ta = 1
COLLECTOR CURRENT : IC(mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Electrical characteristic curves
Tr1 (NPN)
1
2
5
10 20
50 100 200 5001000
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
Emitter input capacitance vs. base voltage
IE=0A
f=1MHz
Ta=25°C
500
200
100
50
Cib
20
Cob
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
○
3/4
2012.06 - Rev.B
EMZ7 / UMZ7N
Data Sheet
DC CURRENT GAIN : hFE
Ta=25°C
200
100
˚C
10
Ta= -40˚C
20
Ta=25˚C
50
5
200
50
20
10
5
2
1
1
0.5
1.0
1.5
Ta= −40°C
100
2
0
1
2
BASE TO EMITTER VOLTAGE : VBE (V)
20
50 100 200
200
100
50
IC / IB=50
IC / IB=20
20
IC / IB=10
10
5
2
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
500 1000
IC/IB=20
5000
2000
Ta=25°C
1000
Ta= −40°C
500
Ta=125°C
200
100
50
20
10
1
2
5
10
20
1000
IC/IB=20
500
200
100
Ta=125°C
50
Ta=25°C
20
Ta= −40°C
10
5
2
1
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.10 Collector-emitter saturation voltage
vs. collector current ( Ι )
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.11 Collector-emitter saturation voltage
vs. collector current
1000
BASER SATURATION VOLTAGE : VBE (sat) (mV)
10000
Ta=25°C
500
EMITTER INPUT CAPACITANCE : Cib(F)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
Fig.9 DC current gain vs.
collector current
1000
1
5
COLLECTOR CURRENT : IC (mA)
Fig.8 Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
VCE=2V
Ta=125°C
500
Fig.12 Base-emitter saturation voltage
vs. collector current
1000
TRANSITION FREQUENCY : fT (MHz)
1000
VCE=2V
500
Ta=125
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
Tr2 (PNP)
VCE=2V
Ta=25°C
500
200
100
50
20
10
5
2
1
1
2
5
10
20
50 100 200
500 1000
EMITTER CURRENT : IC (mA)
Fig.13 Gain bandwidth product vs.
emitter current
IE=0A
500
f=1MHz
Ta=25°C
200
100
50
Cib
20
10
Cob
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.14
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
○
4/4
2012.06 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1120A