M61044FP 3-Battery Version, Reset Pin REJ03F0066-0100Z Rev.1.0 Sep.19.2003 Description The M61044FP is an semiconductor IC device developed for smart battery packs. It incorporates all the analog circuitry required by smart batteries in a single chip. When used in conjunction with a microprocessor, it allows the implementation of a variety of functions, such as battery capacity detection, through the addition of minimal peripheral devices and is ideal for smart battery system (SBS) battery packs. The M61044FP also has an on-chip overcurrent detect circuit so that the FET for controlling battery charging and discharging is protected regardless of the processing speed of the microprocessor. The microprocessor can change the amplifier gain of the charge/discharge current detect circuit, so battery capacity detection accuracy is increased. In addition, the M61044FP incorporates a linear regulator that allows it to function as the power supply for the microprocessor, thereby simplifying power supply block design. Features • • • • • • On-chip high-gain op-amp for monitoring charge and discharge current. On-chip overcurrent detect circuit to protect FET. Charge/discharge FET can be controlled from microprocessor. Power-save function for reducing current consumption. 3.3 V operation to reduce microprocessor current consumption. High-voltage device (absolute maximum rating: 33 V). Application Smart battery system (SBS) battery packs This product is currently under development, and its specifications, pin assignments, etc., are subject to change. Pin Connection Diagram (Top View) 1 16 VREG RESET 2 15 DI VIN_1 3 VIN_2 4 VIN_3 5 VIN_12 6 DFOUT 7 10 VIN_11 CFOUT 8 9 M61044FP VCC 14 CK 13 CS 12 CIN 11 Analog_out Package: 16P-TSSOP Rev.1.0, Sep.19.2003, page 1 of 34 GND M61044FP Block Diagram CFOUT DFOUT CIN VIN_12 VCC VREG FET control circuit Series regulator Overcurrent detect circuit Regulator On/off control Power-down circuit RESET Battery voltage detect circuit CK DI CS Delay circuit Serial/parallel converter circuit Charge/discharge current detect circuit VIN_2 Gain switcher circuit Analog _OUT Output selector Battery 1-3 analog output Shift voltage adjustor VIN_11 Rev.1.0, Sep.19.2003, page 2 of 34 VIN_1 GND VIN_3 M61044FP Pin Function Table 1 Pin No. Symbol Function 1 Vcc The chip’s power supply pin. Power is supplied by the charger or the battery. 2 RESET Output pin for microprocessor reset signal. 3 4 VIN_1 VIN_2 Positive input pin for lithium ion battery 1. Negative input pin for lithium ion battery 1. Positive input pin for lithium ion battery 2. 5 6 VIN_3 VIN_12 Negative input pin for lithium ion battery 2. Positive input pin for lithium ion battery 3. Charger connect monitor pin. Detects changes from power-down status. 7 8 DFOUT CFOUT Output pin for discharge FET on/off signals. Also turns off when overcurrent detected. Output pin for charge FET on/off signals. 9 GND 10 VIN_11 Ground pin. Negative input pin for lithium ion battery 3. Connected to charge/discharge current sensor resistor. Charge/discharge current monitor pin. Connected to charge/discharge current sensor resistor. 11 12 Analog_OUT CIN Output pin for analog signals. Capacity connection pin for setting overcurrent prevention delay time. 13 CS 14 CK When this pin is low level, data input is accepted and data can be stored in a 6-bit shift register. At the rising edge from low to high the value in the 6-bit shift register is latched. Shift clock input pin. At the rising edge to high the input signal from the DI pin is input to the 6-bit shift register. 15 16 DI Vreg Shift data input pin. Serial data with a data length of 6 bits may be input via this pin. Power supply pin for microprocessor. Power can be shut off using a signal from the microprocessor. Operation The M61044FP is an semiconductor IC device developed for smart battery packs. It is ideal for smart battery system (SBS) battery packs that consist of four lithium ion batteries connected in series. A high-voltage device, it is suitable for use with a wide variety of charger systems. It incorporates all the analog circuitry required by smart batteries in a single chip. When used in conjunction with a microprocessor, it allows the implementation of a variety of functions, such as battery capacity detection, through the addition of minimal peripheral devices. The functions of the M61044FP are described below. 1. Battery Voltage Detect Circuit The M61044FP can output the voltage levels of the batteries connected in series via the Analog_out pin. An on-chip buffer amplifier monitors the pin voltages of the batteries. Offset voltage correction using adjustment by the microprocessor is also supported. The M61044FP is configured to detect the battery voltage using a microprocessor driven using a power supply voltage of 5.2 V. 2. Charge/Discharge Current Detect Circuit SBS requires a function for monitoring the battery capacity. The M61044FP uses an on-chip amplifier to monitor battery capacity based on a drop in the voltage of an external sensor resistor. In this way, the charge/discharge current is converted into a voltage. The voltage amplification ratio can be adjusted from the microprocessor. In addition, the current output shift voltage can be adjusted from the microprocessor, widening the allowable dynamic range of the A/D converter. Rev.1.0, Sep.19.2003, page 3 of 34 M61044FP 3. Overcurrent Detect Circuit The M61044FP has an on-chip overcurrent detect circuit. If an excessive current flows from the lithium ion batteries, the discharge control FET is shut off after a set delay time, halting discharge. This makes the battery pack safer. The delay time can be set using an external capacitor. It is possible to determine the overcurrent detect status by monitoring the CIN pin. The overcurrent detect circuit provides protection regardless of the processing speed of the microprocessor. 4. Series Regulator The M61044FP has an on-chip low-dropout series regulator. It can be used as the power supply for the microprocessor, thereby simplifying power supply block design. VCC VREF1 M1 + Vreg ON/OFF R1 R2 From serial/parallel converter circuit Figure 3 Series Regulator 5. Reset Circuit The reset circuit of the M61041FP monitors the voltage of the Vreg pin. If the power supply voltage of the microprocessor drops the reset circuit operates, preventing microprocessor runaway. Microprocessor runaway is avoided because the microprocessor is reset if the battery pack left standing and the battery voltage is allowed to drop. This enhances the safety of battery packs that are left unused. In addition, reset circuit monitors the voltage of the Vreg pin when the battery pack is connected to the charger, ensuring that a reset will be applied if the voltage supplied to the microprocessor becomes excessively small. This helps to guarantee reliable operation. 6. Power-Save Function The M61044FP is equipped with a power-save function. When the battery voltage is being monitored a portion of the charge/discharge current monitor circuit automatically stops operating, and when the charge/discharge current is being monitored the battery voltage monitor circuit automatically stops operating. This helps prevent unnecessary power consumption. In addition, current consumption is further reduced by setting the analog output selector to ground potential output when in the standby mode. Rev.1.0, Sep.19.2003, page 4 of 34 M61044FP Transition to Power-Down Mode When the microprocessor determines that the battery voltage has dropped it sends a power-down instruction via the interface circuit. When it receives the instruction, the M61044FP’s DFOUT pin switches to high voltage. In addition, the VIN_12 pin is pulled down to low level by an internal resistor. When the VIN_12 pin goes to low potential after reception of the power-down instruction, output from the series regulator stops, switching the M61044FP into powerdown mode. At this point the operation of the circuitry is completely halted. In this status CFOUT is high level and DFOUT is high level (external charge/discharge prohibited status). The maximum current consumption of the M61044FP is 1.0 µA in order to prevent any further drop in the battery voltage. DFOUT VIN_12 CFOUT VCC Control signals from interface circuit Ground level after excess discharge VIN_1 Series regulator Vreg M61044FP Regulator On/off control Internal reset circuit RESET CK Serial/parallel converter circuit DI CS Figure 4 Operation After Excess Discharge Detection Cancellation of Power-Down Mode If the battery pack is connected to a charger when the M61044FP is in the power-down mode (VIN_12 becomes high level), the series regulator immediately begins to operate. The power-down mode is canceled, and once again the M61044FP is ready to receive instructions from the microprocessor. Absolute Maximum Ratings Table 2 Item Symbol Rated Value Unit Absolute maximum rating Vabs 33 V Power supply voltage Allowable loss Vcc PD 30 500 V mW Ambient operating temperature Storage temperature Topr Tstg -20 to +85 -40 to +125 °C °C Rev.1.0, Sep.19.2003, page 5 of 34 Conditions M61044FP Standard CK TSDI THDI DI TSCS THCS CS Figure 5 Interface Block Timing Definitions Rev.1.0, Sep.19.2003, page 6 of 34 M61044FP Electrical Characteristics Table 3 (Ta = 25°C, Vcc = 14 V unless otherwise specified) Rated Value Block Item Symbol Min. Typ. Max. Unit Circuit Command All Power supply voltage Vsup 30 V 1 Circuit current 1 Isup1 60 150 215 µA 1 1 During charge/discharge current monitoring Circuit current 2 Isup2 55 140 200 µA 1 2 During battery voltage monitoring Circuit current 3 Isup3 25 80 115 µA 1 3 During ground output (initial status) Circuit current (power-down mode) Ipd 0.5 µA 1 4 All circuits halted, VIN_12 = GND Output voltage Vreg 3.220 3.3 3.380 V 2 Vcc = 10.5V, Iout = 30mA Input stability ∆Vout10 60 100 mV 2 Vcc = 6.0V to 24V, Iout = 30mA Load stability ∆Vout20 30 50 mV 2 Vcc = 6.0V, Iout = 0.1mA to 30mA Input voltage (VCC pin) VIN0 6.0 30 V 2 Reset detect voltage 1 Vdet- 2.600 2.750 2.900 V 2 Reset cancel voltage 1 Vdet+ 2.900 2.975 3.050 V 2 Overcurrent prevention voltage 1 Vd1 0.08 0.1 0.12 V 3 5 Overcurrent prevention voltage 2 Vd2 Vcc/3 ×0.6 Vcc/3 Vcc/3 ×1.4 V 4 5 Load short detected Overcurrent prevention delay time 1 Tvd1 7 10 15 ms 3 5 CICT = 0.01µF Overcurrent prevention delay time 2 Tvd2 150 250 350 µs 4 5 Input offset voltage 1 Voff1 31 206 385 mV 5 6 Voltage amplification ratio 1 Gamp1 0.594 0.600 0.606 5 7 Output source current capacity Isource1 150 µA 6 8 Output sink current capacity Isink1 150 µA 6 9 Maximum detect battery voltage Vmo_max 4.64 V 5 Regulator Overcurrent detect Battery voltage detect Rev.1.0, Sep.19.2003, page 7 of 34 Conditions (Vreg−Voff1)/Gamp1 M61044FP Rated Value Block Item Symbol Min. Typ. Max. Unit Circuit Command Conditions Charge/disc harge current detect Input offset voltage Voff2 0.5 1.2 1.9 V 7 10* Gain = 100 Voltage amplification ratio 21 Gain21 19.2 20 20.8 7 11* Voltage amplification ratio 22 Gain22 38.4 40 41.6 7 12* Voltage amplification ratio 23 Gain23 96 100 104 7 13* Current output shift voltage 1 Vios1 0.36 0.41 0.46 V 7 14* Current output shift voltage 2 Vios2 0.76 0.83 0.90 V 7 15* Current output shift voltage 3 Vios3 1.14 1.24 1.34 V 7 16* Current output shift voltage 4 Vios4 1.53 1.65 1.77 V 7 17* Output source current capacity Isource2 150 µA 8 18* Output sink current capacity Isink2 150 µA 8 18* DI input H voltage VDIH Vreg−0.5 Vreg V 9 DI input L voltage VDIL 0 0.5 V 9 CS input H voltage VCSH Vreg−0.5 Vreg V 9 CS input L voltage VCSL 0 0.5 V 9 CK input H voltage VCKH Vreg−0.5 Vreg V 9 CK input L voltage VCKL 0 0.5 V 9 Interface DI setup time TSDI 600 ns 9 DI hold time THDI 600 ns 9 CS setup time TSCS 600 ns 9 CS hold time THCS 600 ns 9 Refer to figures 1 to 9 for the circuits and to table 4 for the command sequences used for measurement. * For the charge/discharge current detect block, different command sequences are used during charging and discharging. Rev.1.0, Sep.19.2003, page 8 of 34 M61044FP Measurement Circuit Diagrams During Ipd measurement: S1 = off, S2 = on All other times: S1 = on, S2 = off DFOUT CFOUT VCC CREG VREG VIN_2 A VIN_3 RESET S2 4.7µF M61044FP VIN_1 VCC S1 VIN_12 DI CK Data input VREG ↔ VSS CS GND CIN CIN 0.01µF VCS _OUT VDI VIN_11 VCK ANALOG VIN_3 RESET GND DI CK Data input VREG ↔ VSS CS CIN CIN 0.01µF V Circuit 2 Rev.1.0, Sep.19.2003, page 9 of 34 VDI _OUT VCK ANALOG VCS VM_reset VIN_11 VM_reg S3 V VREG M61044FP 1MΩ VIN_2 VCC VS_reg VIN_12 VIN_1 S2 DFOUT VCC CREG CFOUT S1 S4 Circuit 1 M61044FP DFOUT CFOUT VCC VIN_3 VCC RESET CREG VREG M61044FP VIN_1 VIN_2 V VIN_12 4.7µF DI CK Data input VREG ↔ VSS CS GND CIN 0.01µF VDI _OUT VCK VIN_11 VCS ANALOG VIN_11 Circuit 3 CFOUT VCC VCC RESET GND CREG VREG M61044FP VIN_3 V VIN_12 VIN_1 VIN_2 VIN_12 DFOUT 4.7µF DI CK Data input VREG ↔ VSS CS CIN CIN 0.01µF Circuit 4 Rev.1.0, Sep.19.2003, page 10 of 34 VDI VCK _OUT VCS VIN_11 ANALOG M61044FP DFOUT CFOUT VCC VIN_12 VBAT1 VIN_2 VBAT2 VIN_3 VBAT3 RESET CREG VREG M61044FP VIN_1 4.7µF DI CK Data input VREG ↔ VSS CS GND CIN CIN 0.01µF VDI _OUT VCK VIN_11 VCS ANALOG V Circuit 5 CFOUT DFOUT VCC VIN_12 VIN_1 CREG VREG VIN_2 VBAT2 VIN_3 VBAT3 RESET GND M61044FP 4.7µF VBAT1 DI CK Data input VREG ↔ VSS CS CIN CIN 0.01µF Circuit 6 Rev.1.0, Sep.19.2003, page 11 of 34 VDI VCK _OUT VCS VIN_11 ANALOG A M61044FP DFOUT CFOUT VCC VIN_12 VIN_2 VIN_3 VCC RESET CREG VREG M61044FP VIN_1 4.7µF DI CK Data input VREG ↔ VSS CS GND CIN CIN VDI _OUT VCK VIN_11 VCS VIN_11 0.01µF ANALOG V Circuit 7 CFOUT DFOUT VCC VIN_12 VIN_2 VIN_3 VCC RESET GND CREG VREG M61044FP VIN_1 4.7µF DI CK Data input VREG ↔ VSS CS CIN CIN Circuit 8 Rev.1.0, Sep.19.2003, page 12 of 34 VDI _OUT VCK VIN_11 VCS VIN_11 0.01µF ANALOG A M61044FP V V DFOUT CFOUT VCC VIN_12 VIN_1 VIN_12 CREG VREG 4.7µF VIN_2 VBAT2 VIN_3 VBAT3 RESET GND M61044FP VBAT1 DI CK Data input VREG ↔ VSS CS CIN CIN Circuit 9 Rev.1.0, Sep.19.2003, page 13 of 34 VDI _OUT VCK VIN_11 VCS VIN_11 0.01µF ANALOG V M61044FP Table 4 Command Sequences Used for Measuring Rated Values No Command Sequence VIN_11 Input 1 (00)8 → (24)8 →(31)8 →(43)8 →(52)8 90mV 2 (00)8 → (10)8 →(43)8 →(51)8 0mV 3 4 (00)8 (00)8 → (71)8 0mV 0mV 5 6 (00)8 → (43)8 (00)8 → (51)8 →(14)8 →(15)8 →(16)8→(17)8 0mV 0mV 7 8 (00)8 → (51)8 →(10)8 →(11)8 →(12)8→(13)8 (00)8 → (51)8 →(13)8 0mV 0mV 9 10 (00)8 → (51)8 →(17)8 (00)8 → (43)8 →(52)8 →(37)8 0mV 0mV 11 12 (00)8 → (43)8 →(52)8 →(31)8 →(35)8 (00)8 → (43)8 →(52)8 →(32)8 →(36)8 90mV 45mV 13 14 (00)8 → (43)8 →(52)8 →(33)8 →(37)8 (00)8 → (43)8 →(52)8 →(31)8 →(24)8 7mV 90mV 15 16 (00)8 → (43)8 →(52)8 →(31)8 →(25)8 (00)8 → (43)8 →(52)8 →(31)8 →(26)8 90mV 90mV 17 18 (00)8 → (43)8 →(52)8 →(31)8 →(27)8 (00)8 → (43)8 →(52)8 →(31)8 90mV 45mV Notes : 1. Indications such as (00)8 show the address and data, in that order, of the serial data from the microprocessor in octal notation. 2. Numbers 10 to 17 are command sequences used during charging. For the commands used during discharging, substitute (53)8 for (52)8. 3. During measurement, the voltage listed in table 4 should be input to VIN_11. When measuring during charging, the specified voltage should be input to VIN_11 as a negative voltage. The specified voltage should be input to VIN_11 as a positive voltage during discharging. Description of Circuit Blocks (1) Battery Voltage Detect Circuit As shown in figure 6, the battery voltage detect circuit block of the M61044FP consists of switches, a buffer amplifier, a reference voltage circuit, and a logic circuit. When the voltage to be detected is selected, based on serial data from the microprocessor, the appropriate switch connections are determined by the logic circuit. The voltages Vbat1, Vbat2, and Vbat3 from the batteries connected to the M61044FP, multiplied by Gamp1 (0.6), are output from the Analog_out pin. It is also possible to output an offset voltage. In the power-save mode all the switches are turned off, so the current consumption of this circuit block is zero. Note : The settling time of this circuit block after voltage changes is about 50 µs. Rev.1.0, Sep.19.2003, page 14 of 34 M61044FP S11 VIN_1 S22 Switch control From serial/parallel converter circuit S21 Vbat1 VIN_2 Logic circuit S32 M61044FP ; R2=0.6 × R1 Vbat2 S31 R2 VIN_3 S42 R1 R1 Vbat3 To Analog_Out S41 R2 GND Voff S02 GND S01 Figure 6 Battery Voltage Detect Circuit Battery Voltage Monitoring Method To select battery voltage detection, serial data (51)8 is sent from reset status (00)8. The V1 battery voltage (Vin1) is output from the analog output pin by sending (10)8. Next, (15)8 is sent to switch the analog output pin from the V1 battery voltage to the V1 offset voltage (Voff1). The actual voltage (Vbat1) can be obtained by the microprocessor by calculating Vbat1 = (Vin1 – Voff1) / Gamp. The same method can be used for Vbat2 and Vbat3 in order to monitor the battery voltage with a high degree of accuracy. (2) Charge/Discharge Current Detect Block As shown in figure 7, the charge/discharge current detect block of the M61044FP consists of a preamplifier current output shift voltage adjustment circuit, a buffer amplifier, and dividing resistors. The voltage difference indicated by the sensor resistor is amplified to the ground reference voltage by the preamplifier. The gain can be switched using serial signals from the microprocessor. The output is impedance converted by the buffer amplifier. It is also possible to switch the current detect shift voltage using the microprocessor. Rev.1.0, Sep.19.2003, page 15 of 34 M61044FP From serial/parallel converter circuit Vreg = 3.3V AMP2 AMP3 Charge current monitor R RC3 To Analog_Out RC1 R RC2 R Charge current monitor RD1 R RD2 RD3 AMP1 AMP4 From serial/parallel converter circuit Shift voltage adjustment circuit VIN_11 GND GND Rsense Figure 7 Charge/Discharge Current Detect Block Figure 8 illustrates the circuit block’s operation during discharge current detection. The discharge current flows into Rsense, and any voltage drop that occurs is applied to the positive terminal of the amplifier (AMP1). The amplifier’s gain can be increased by an instruction from the microprocessor, making it possible to monitor even minute discharge currents with high accuracy. To allow monitoring of the charge current, the voltage generated by VIN_11 is inverted and amplified before being output. The other aspects use the same operating principle as that described above. From interface circuit Vb=Icha × Rsens × Gain AMP2 RC3 RC1 RC2 RD1 AMP1 RD2 RD3 GND Va=Idis × Rsens × Gain VIN_11 Charge current I c h a Rsense Discharge current I d i s Figure 8 Charge/Discharge Current Detect Explanation Diagram Rev.1.0, Sep.19.2003, page 16 of 34 M61044FP Charge Current Monitoring Method Serial data (43)8 is sent from reset status to turn on the discharge control FET. When the charger is connected in this status a current flows between the VIN_11 pin and the GND pin (across the RSENSE sensor transistor), causing the voltage Vin1 to be generated. Sending (52)8 switches the output of the analog output pin to charge current output. At this point the amplifier used for monitoring the charge current is still off, so the analog output pin outputs ground potential. Next, a value between (35)8 and (37)8 is selected to switch the amplifier’s amplification ratio. In this way the amplification ratio of the amplifier used for monitoring the charge current is switched to GainC. At this point the voltage of the analog output pin is the offset voltage of the charge current monitor amplifier (VoffC). If the offset voltage VoffC is higher than the value listed in table 5, the shift voltage select command between (24)8 and (27)8 that corresponds to VoffC is sent and once again the offset voltage is measured, this time as VoffC_S. Next, a value between (31)8 and (33)8 is selected to switch the current monitor amplifier’s amplification ratio. At this point the voltage of the analog output pin is VaoutC. It is possible to calculate the charge current based on the analog output pin voltages resulting from the above settings. When calculating the current value, VoffC_S offset and VaoutC current monitor values measured using the same amplification ratio should be used. Table 6 is a list of the measurable current values. Icha (charge current) = Vin1 ÷ RSENSE (sensor resistor value) … (1) VaoutC – VoffC_S = Vin1 × GainC … (2) Based on (1) and (2) it is possible to calculate the charge current. Icha (charge current) = (VaoutC – VoffC_S) ÷ GainC ÷ RSENSE Discharge Current Monitoring Method Serial data (43)8 is sent from reset status to turn on the discharge control FET. When a load is connected in this status a current flows between the VIN_11 pin and the GND pin (across the RSENSE sensor transistor), causing the voltage Vin1 to be generated. Sending (53)8 switches the output of the analog output pin to discharge current output. At this point the amplifier used for monitoring the discharge current is still off, so the analog output pin outputs ground potential. Next, a value between (35)8 and (37)8 is selected to switch the amplifier’s amplification ratio. In this way the amplification ratio of the amplifier used for monitoring the discharge current is switched to GainD. At this point the voltage of the analog output pin is the offset voltage of the discharge current monitor amplifier (VoffD). If the offset voltage VoffD is higher than the value listed in table 5, the shift voltage select command between (24)8 and (27)8 that corresponds to VoffD is sent and once again the offset voltage is measured, this time as VoffD_S. Next, a value between (31)8 and (33)8 is selected to switch the current monitor amplifier’s amplification ratio. At this point the voltage of the analog output pin is VaoutD. It is possible to calculate the discharge current based on the analog output pin voltages resulting from the above settings. When calculating the current value, VoffD_S offset and VaoutD current monitor values measured using the same amplification ratio should be used. Table 6 is a list of the measurable current values. Idis (discharge current) = Vin1 ÷ RSENSE (sensor resistor value) … (1) VaoutD – VoffD_S = Vin1 × GainD … (2) Based on (1) and (2) it is possible to calculate the discharge current. Idis (discharge current) = (VaoutD – VoffD_S) ÷ GainD ÷ RSENSE Discharge Current Measurable Range The range of discharge current values that can be measured is determined by the sensor resistor value, the Vreg voltage, and the amplification ratio of the current monitor amplifier. Refer to table 6 for details. The current value is proportional to the sensor resistor value, so if the sensor resistor value changes it is possible to determine the new measurable range of current values by multiplying the sensor resistor value by the current coefficient value listed in table 6. Rev.1.0, Sep.19.2003, page 17 of 34 M61044FP Table 5 Shift Voltage Switching Offset Voltage Vreg Voltage Measurement Offset Value Shift Setting Voltage Select Command 3.3V 0.55V or higher −0.4V (24)8 3.3V 1.00V or higher −0.8V (25)8 3.3V 3.3V 1.45V or higher 1.90V or higher −1.2V −1.6V (26)8 (27)8 Table 6 Measurable Current Values Maximum Measurable Current Value Vreg Voltage Current Monitor Amplifier Amplification Ratio 20 mΩ Ω Sensor Resistor∗ ∗ Current 2 Coefficient∗ ∗ Minimum Resolution (10bit A/D) 3.3V 20× 6.6A (Vcc = 7.0V) 0.131 7.3mA 3.3V 3.3V 40× 100× 3.3A (Vcc = 7.0V) 1.3A (Vcc = 7.0V) 0.065 0.027 3.6mA 1.5mA Note 1 ∗ 1 The maximum measurable current value is dependent on the Vcc voltage. If the Vcc voltage drops the maximum measurable current value also drops. ∗ 2 If the sensor resistor value changes the current coefficient becomes the maximum measurable current value divided by the new sensor resistor value. Example: If the sensor resistor value = 15 mΩ, Vreg = 3.3 V, and the amplification ratio is 20× … Maximum measurable current value = 0.131(current coefficient) ÷ 0.015 [Ω] = 8.73 [A] (sensor resistor value) (3) Overcurrent Detect Circuit Block As shown in figure 9, the overcurrent detect circuit block of the M61044FP consists of a comparator, a reference voltage circuit, and a delay circuit. The detection voltage can be adjusted by trimming, making possible highly accurate voltage detection in conjunction with a sensor resistor. In addition, it is possible to determine when the M61044FP is in overcurrent detect status by monitoring the CIN pin using the microprocessor. The M61044FP is also equipped with a simplified load detect circuit. Based on the status of the Vin12 pin it is possible to provide protection with a shorter delay time than when using overcurrent detection. Rev.1.0, Sep.19.2003, page 18 of 34 M61044FP DFOUT VIN_12 - Battery Delay circuit To microprocessor + Vref1 CIN VIN_11 GND Rsense Figure 9 Overcurrent Detect Circuit Block (4) Series Regulator The series regulator circuit is shown in figure 10. A Pch MOS transistor is used as the output control transistor. The output voltage is adjusted by the M61044FP internally, so no external devices, such as resistors, are required. Note : Due to the structure of the control transistor a parasite diode is formed between VCC and Vreg. This means that the M61044FP can be destroyed by reverse current if the Vreg potential exceeds VCC. Consequently, Vreg should be limited to VCC + 0.3 V or less. VCC VREF1 M1 + Vreg ON/OFF R1 R2 From serial/parallel converter circuit Figure 10 Series Regulator Rev.1.0, Sep.19.2003, page 19 of 34 M61044FP (5) Reset Circuit Block As shown in figure 11, the reset circuit block of the M61041FP consists of a converter, a reference voltage circuit, and bleeder resistors. Output is via the Nch open drain circuit, so an external CR can be connected to specify the cancel delay time. The reset circuit monitors the Vreg output and prevents microprocessor runaway if the power supply voltage should drop do to some sort of malfunction. Vreg R1 + Reset R2 Vref1 Rh GND Figure 11 Reset Circuit Block Digital Data Format MSB First Last DI LSB 6-bit shift register CK D5 CS Address D4 D3 D2 D1 decoder Latch Latch Latch Latch Latch MPX MPX MPX Output selector VR, overcurrent controller MPX MPX MPX Battery voltage adjuster Shift voltage adjuster Current gain adjuster FET controller Figure 12 Serial/Parallel Converter Circuit Block Diagram Rev.1.0, Sep.19.2003, page 20 of 34 D0 Latch M61044FP Data Timing Diagram (Model) LSB MSB D1 D0 DI D2 D3 D4 D5 CK CS Figure 13 Serial/Parallel Converter Circuit Timing Chart Data Content Table 7 Address Data Setting Data D5 D4 D3 D2 D1 D0 Content Reset 0 0 0 Battery voltage selector Current output shift voltage adjuster 0 0 0 1 1 0 See table 8 See table 9 Current monitor gain adjuster FET controller 0 1 1 0 1 0 See table 10 See table 11 Output selector Regulator Overcurrent detection controller 1 1 0 1 1 1 See table 12 See table 13 Data Content Table 8 Battery Voltage Selector D5 to D3 D2 D1 D0 Output Voltage Note 001 0 0 0 0 V (no shift voltage) Selected after reset 001 001 0 0 0 1 1 0 V1 voltage V2 voltage 001 001 0 1 1 0 1 0 V3 voltage 0 V (no shift voltage) 001 001 1 1 0 1 1 0 V1 offset voltage V2 offset voltage 001 1 1 1 V3 offset voltage Note : V1 voltage is selected after reset. The V0 offset voltage should not be used. Rev.1.0, Sep.19.2003, page 21 of 34 M61044FP Table 9 Current Output Shift Voltage Adjuster D5 to D3 D2 D1 D0 Current Output Shift Voltage Value Note 010 0 0 0 0 V (no shift voltage) Selected after reset 010 0 0 1 0 V (no shift voltage) 010 010 0 0 1 1 0 1 0 V (no shift voltage) 0 V (no shift voltage) 010 010 1 1 0 0 0 1 0.4V 0.8V Vreg/8×1 Vreg/8×2 010 010 1 1 1 1 0 1 1.2V 1.6V Vreg/8×3 Vreg/8×4 Note : No current output shift voltage after reset. Table 10 Charge/Discharge Current Detector D5 to D3 D2 D1 D0 Output Gain Switch Note 011 011 0 0 0 0 0 1 Amplifier off 20× (current value output) Selected after reset 011 011 0 0 1 1 0 1 40× (current value output) 100× (current value output) 011 011 1 1 0 0 0 1 Amplifier off 20× (offset output) 011 011 1 1 1 1 0 1 40× (offset output) 100× (offset output) Same as after reset Note : Amplifier off after reset. Table 11 FET Controller D5 to D3 D2 D1 D0 CFOUT DFOUT Note 100 100 0 0 0 0 0 1 High Low High High Selected after reset 100 100 0 0 1 1 0 1 High Low Low Low 100 100 1 1 0 0 0 1 Don’t care Don’t care Don’t care Don’t care 100 100 1 1 1 1 0 1 Don’t care Don’t care Don’t care Don’t care Note : DFOUT and CFOUT pins set to off after reset. (Current control FET is off when output is high level.) Table 12 Output Selector D5 to D3 D2 D1 D0 Output Selection Note 101 0 0 0 Ground output Selected after reset 101 101 0 0 0 1 1 0 Battery voltage value output Charge current value output 101 101 0 1 1 0 1 0 Discharge current value output Don’t care 101 101 1 1 0 1 1 0 Don’t care Don’t care 101 1 1 1 Don’t care Note : Ground potential output after reset. Rev.1.0, Sep.19.2003, page 22 of 34 M61044FP Table 13 Regulator, Overcurrent Detection Controller D5 to D3 D2 D1 D0 Voltage Regulator Output Overcurrent Detect Circuit Note 111 0 0 0 ON ON Selected after reset 111 0 0 1 OFF OFF Both circuits off 111 111 0 0 1 1 0 1 ON ON CIN pin fixed low CIN pin fixed high Overcurrent circuit off Overcurrent circuit off 111 111 1 1 0 0 0 1 Don’t care Don’t care Don’t care Don’t care 111 111 1 1 1 1 0 1 Don’t care Don’t care Don’t care Don’t care Note : Regulator output and overcurrent circuit both on after reset. Note: A setting of 111001 caused the M61042FP to transition to the power-down mode. However, transition to the power-down mode does not occur when connected to a charger (VIN_12 is high level). Rev.1.0, Sep.19.2003, page 23 of 34 M61044FP Timing Charts VIN_11 (V) Battery voltage (V) Charging Sequence 5 4 Vbat3 reaches overcharge detect voltage 3 2 From bottom: Vbat1, Vbat2, Vbat3 Charging time 1 0 0.15 0.1 0.05 0 -0.05 -0.1 -0.15 During discharge During charging CFOUT (V) 20 15 10 5 Off during initialization Instruction from microprocessor Instruction from microprocessor Start of charging End of charging 0 DFOUT (V) 20 15 10 5 Off during initialization Analog_out (V) Vreg (V) & Reset (V) Battery voltage (V) 0 20 VIN_12 pin 15 VCC pin 10 VIN_1 pin 5 0 5 4 Charger connected 3 2 1 0 Vreg Reset 5 4 3 2 1 0 Gain 100 Microprocessor operation start Gain 20 Battery 3 Battery 2 Battery 1 monitor monitor monitor Charge current monitor Note: A fixed-voltage charger is used. Figure 15 Charging Sequence Rev.1.0, Sep.19.2003, page 24 of 34 Battery voltage monitor M61044FP VIN_11 (V) Battery voltage (V) Discharge Sequence 5 From top: Vbat1, Vbat2, Vbat3 4 Discharge time Self-discharge time 3 2 Vbat3 reaches excess discharge detect voltage 1 0 0.15 0.1 0.05 0 -0.05 -0.1 -0.15 During discharge Start of discharge During Load connection charging End of discharge CFOUT (V) 20 15 Instruction from microprocessor 10 Off in power-down mode 5 0 DFOUT (V) 20 End of discharge 15 Instruction from microprocessor 10 Off in power-down mode 5 Battery voltage (V) 20 Vreg (V) & Reset (V) 0 5 System stop 4 Instruction from microprocessor 15 10 VIN_1 pin VIN_12 pin Pulled down to ground potential when discharge prohibited 5 0 3 2 Reset 1 0 5 Analog_out (V) VCC pin 4 3 2 1 0 Gain 100 Gain 20 Discharge current monitor Battery 1 Battery 2 Battery 3 monitor monitor monitor Battery voltage monitor Figure 16 Discharge Sequence Rev.1.0, Sep.19.2003, page 25 of 34 Vreg M61044FP Battery voltage (V) Overcurrent Sequence 5 4 Vbat1=Vbat2=Vbat3 3 2 1 0 Rush current Load short Overcurrent VIN_11 (V) 0.8 0.6 0.4 During discharge Rush current Overcurrent Load short 0.2 0 -0.2 CFOUT (V) 20 15 10 5 0 DFOUT (V) 20 End of discharge 15 End of discharge 10 5 Battery voltage (V) 0 20 VIN_1 pin 15 10 VCC pin VIN_12 pin 5 Vreg (V) & Reset (V) 0 5 4 3 2 Vreg Reset 1 0 Analog_out (V) 5 4 3 2 1 0 Discharge current monitor Gain 20 Figure 17 Overcurrent Sequence Rev.1.0, Sep.19.2003, page 26 of 34 M61044FP Principal Item Characteristics Overall Current Consumption (ISUP1)-Power Supply Voltage (VCC) Characteristics Temp.=25˚C Current Consumption (ISUP1)-Temperature (Ta) Characteristics Vcc=10.5V 200µA 200µA 180µA 180µA 160µA 160µA 140µA 140µA 120µA 120µA 100µA 5V 10V 15V 20V 25V 30V Current Consumption (ISUP2)-Power Supply Voltage (VCC) Characteristics Temp.=25˚C 100µA -50˚C 200µA 180µA 180µA 160µA 160µA 140µA 140µA 120µA 120µA 5V 10V 15V 20V 25V 30V Current Consumption (IPS)-Power Supply Voltage (VCC) Characteristics Temp.=25˚C 100µA -50˚C 100µA 100µA 80µA 80µA 60µA 60µA 10V 15V 20V 25V 30V Current Consumption (IPD)-Power Supply Voltage (VCC) Characteristics Temp.=25˚C 40µA -50˚C 0.04µA 0.04µA 0.03µA 0.03µA 0.02µA 0.02µA 0.01µA 0.01µA 10V 15V 20V Rev.1.0, Sep.19.2003, page 27 of 34 25V 30V 100˚C -25˚C 0˚C 25˚C 50˚C 75˚C 100˚C -25˚C 0˚C 25˚C 50˚C 75˚C 100˚C Vcc=10.5V 0.05µA 5V 75˚C Current Consumption (IPD)-Temperature (Ta) Characteristics 0.05µA 0.00µA 50˚C Vcc=10.5V 120µA 5V 25˚C Current Consumption (IPS)-Temperature (Ta) Characteristics 120µA 40µA 0˚C Vcc=10.5V 200µA 100µA -25˚C Current Consumption (ISUP3)-Temperature (Ta) Characteristics 0.00µA -50˚C -25˚C 0˚C 25˚C 50˚C 75˚C 100˚C M61044FP Regulator Block Regulator Output Voltage (VREG)-Power Supply Voltage (VCC) Characteristics Temp.=100˚C Regulator Output Voltage (VREG)-Temperature (Ta) Characteristics Vcc=30V 3.40 3.40 3.35 3.35 3.30 3.30 30mA 20mA 10mA 0.1mA 3.25 3.20 5V 10V 15V 20V 25V 30V Regulator Output Voltage (VREG)-Power Supply Voltage (VCC) Characteristics Temp.=25˚C 3.20 -50˚C 3.35 3.35 3.30 3.30 3.20 5V 10V 15V 20V 25V 30V Regulator Output Voltage (VREG)-Power Supply Voltage (VCC) Characteristics Temp.=-25˚C 3.20 -50˚C 3.35 3.30 3.30 10V 15V 20V 25V 30V Regulator Output Voltage (VREG)-Output Current (IREG) Characteristics Temp.=25˚C 3.20 -50˚C 3.0V 3.0V 2.5V 2.5V 2.0V 2.0V 1.5V 1.5V 0.0V 0.00A -25˚C 0˚C 25˚C 50˚C 75˚C 100˚C 30mA 20mA 10mA 0.1mA -25˚C 0˚C 25˚C 50˚C 75˚C 100˚C Regulator Output Voltage (VREG)-Output Current (IREG) Characteristics Vcc=14V 3.5V 0.5V 100˚C 30mA 20mA 10mA 0.1mA 3.25 3.5V 1.0V 75˚C Vcc=6V 3.35 3.20 5V 50˚C Regulator Output Voltage (VREG)-Temperature (Ta) Characteristics 3.40 30mA 20mA 10mA 0.1mA 25˚C 3.25 3.40 3.25 0˚C Vcc=14V 3.40 30mA 20mA 10mA 0.1mA -25˚C Regulator Output Voltage (VREG)-Temperature (Ta) Characteristics 3.40 3.25 30mA 20mA 10mA 0.1mA 3.25 1.0V 6V 14V 30V 0.05A 0.5V 0.10A 0.15A Rev.1.0, Sep.19.2003, page 28 of 34 0.20A 0.25A 0.0V 0.00A 90˚C 25˚C -30˚C 0.05A 0.10A 0.15A 0.20A 0.25A M61044FP Overcurrent Detect Block Overcurrent 1 Detect Voltage (VIOV1)-Temperature (Ta) Characteristics Vcc=10.5V 0.12V Overcurrent 1 Detect Delay Time (TIOV1)-Temperature (Ta) Characteristics Vcc=10.5V 15mS 0.11V 13mS 0.10V 11mS 0.09V 9mS 0.08V -30˚C 0˚C 30˚C 60˚C 90˚C Overcurrent 2 Detect Voltage (VCC/VIOV2)-Temperature (Ta) Characteristics Vcc=10.5V 4.2 7mS -30˚C 0˚C 30˚C 60˚C 90˚C Overcurrent 2 Detect Delay Time (TIOV2)-Temperature (Ta) Characteristics Vcc=10.5V 350µS 3.8 300µS 3.4 3.0 250µS 2.6 200µS 2.2 1.8 -30˚C 0˚C 30˚C 60˚C 90˚C Overcurrent Hold Detect Voltage (VCC-VIOVX)-Temperature (Ta) Characteristics Vcc=10.5V 3.0V 150µS -30˚C 0˚C 30˚C 60˚C 90˚C Overcurrent 1 Detect Delay Time (TIOV1)-Capacitance (CICT) Characteristics Vcc=10.5V 500mS 450mS 2.8V 400mS 350mS 2.6V 300mS 250mS 2.4V 200mS 150mS 2.2V 100mS 50mS 2.0V -30˚C 0˚C 30˚C Rev.1.0, Sep.19.2003, page 29 of 34 60˚C 90˚C 0mS 0.0µF 0.1µF 0.2µF 0.3µF 0.4µF 0.5µF M61044FP Reset Block Overcurrent 1 Detect Voltage (VIOV1)-Temperature (Ta) Characteristics Vcc=10.5V 3.1V Overcurrent 1 Detect Delay Time (TIOV1)-Temperature (Ta) Characteristics Vcc=10.5V 50µS 45µS 3.0V 40µS 35µS 2.9V 30µS 2.8V 20µS 2.7V VdetVdet+ 2.6V -30˚C TdetTdet+ 25µS 0˚C 30˚C 60˚C 90˚C 15µS 10µS -30˚C 0˚C 30˚C 60˚C 90˚C Battery Voltage Detect Block Battery Voltage Input Offset Voltage (VOFF1)-Temperature (Ta) Characteristics VREG=3.3V Battery Voltage Amplification Ratio 1 (Gamp1)-Temperature (Ta) Characteristics VREG=3.3V 1.00% 0.40V 0.75% 0.35V 0.50% 0.30V 0.25% 0.25V 0.00% -0.25% 0.20V V1_offset V2_offset V3_offset 0.15V 0.10V -30˚C 0˚C 30˚C Rev.1.0, Sep.19.2003, page 30 of 34 60˚C 90˚C -0.50% V1_Gain_err V2_Gain_err V3_Gain_err -0.75% -1.00% -30˚C 0˚C 30˚C 60˚C 90˚C M61044FP Battery Voltage Detect Block Battery Voltage Input Offset Voltage (VOFF2)-Temperature (Ta) Characteristics VREG=3.3V 18mV Discharge Current Input Offset Voltage (VOFF2)-Temperature (Ta) Characteristics VREG=3.3V 18mV 16mV 16mV 14mV 14mV 12mV 12mV 10mV 10mV Offset20 Offset20 Offset40 Offset40 Offset100 Offset100 Offset200 8mV 6mV -30˚C 0˚C 30˚C 60˚C 90˚C Battery Voltage Amplification Ratio (Gamp2)-Temperature (Ta) Characteristics VREG=3.3V 8mV 6mV -30˚C 4% 3% 3% 2% 2% 1% 1% 0% 0% -1% -1% Gain_err20 Gain_err20 Gain_err40 Gain_err40 Gain_err100 Gain_err100 Gain_err200 -3% -4% -30˚C 0˚C 30˚C Rev.1.0, Sep.19.2003, page 31 of 34 60˚C 90˚C 0˚C 30˚C 60˚C 90˚C Discharge Current Amplification Ratio (Gamp2)-Temperature (Ta) Characteristics VREG=3.3V 4% -2% Offset20 Offset20 Offset40 Offset40 Offset100 Offset100 Offset200 Gain_err20 Gain_err20 Gain_err40 Gain_err40 Gain_err100 Gain_err100 Gain_err200 -2% -3% -4% -30˚C 0˚C 30˚C 60˚C 90˚C M61044FP Sample Application Circuit CVCC DFET To + terminal CIN1 CFET See note 3. RCF CCF RIN1 VDD RIN1 CS CS DI DI CIN1 RIN2 Battery 1 VIN_ VIN_ CIN2 RIN3 Protect CK VIN_ VIN_ M61044FP M3751 See note 2. A N A L O G _ O nd RESET CK OUT SENC VREF D G N AD G NADD _ I N Vcc VREG RRST CRST AD_IN CFOU VIN_1 D F O UVCC 2 Rese CREG Battery 2 VIN_ VIN_ CIN3 Battery 3 VIN_ CIN VIN_1 CIN1 GND RIN1 CIN_ See note 1. CICT To - terminal RSENS Figure 18 Sample Application Circuit Notes on Circuit Board Design 1. The current sensor resistor (RSENSE) should be located adjacent to the VSS and VIN_11 pins of the M61042FP. In addition, no circuitry other than that recommended above should be added between the M61042FP and RSENSE. Any extraneous current flow in this channel could result in errors when measuring the charge and discharge currents. 2. The load capacitance of the ANALOG_OUT pin, including parasite capacitance, should be no more than 10 pF. If a capacitor of more than 10 pF is connected, the output from ANALOG_OUT may begin to oscillate. 3. Power supply fluctuations during overcurrent detection and when connected to a charger may cause the M61042FP to reset. It is possible to prevent incorrect operation by connecting a CR filter to the control signal of the charge control FET. Rev.1.0, Sep.19.2003, page 32 of 34 M61044FP Table 14 External Device Constants Device Symbol Purpose Recommen ded Value Min. Max. Notes Pch MOSFET DFET Discharge control Pch MOSFET CFET Charge control 1) Values differ among RIN2 to RIN3. Resistor RIN1 ESD countermeasure 10Ω 1kΩ Capacitor CIN1 Power supply fluctuation countermeasure 0.22µF 1.0µF Resistor RIN2 ESD countermeasure 1kΩ 1MΩ Capacitor CIN2 Power supply fluctuation countermeasure 0.22µF 1.0µF Resistor RIN3 ESD countermeasure 1kΩ 1MΩ Capacitor CIN3 Power supply fluctuation countermeasure 0.22µF 1.0µF Resistor RIN12 Charger reverse connection countermeasure 10kΩ 300Ω 100kΩ Capacitor CIN12 Power supply fluctuation countermeasure 0.01µF 0.1µF Resistor RIN11 Power supply fluctuation countermeasure 100Ω 200Ω Capacitor CIN11 Power supply fluctuation countermeasure 0.1µF 1.0µF Capacitor CVCC Power supply fluctuation countermeasure 0.22µF Sensor resistor RSENSE Charge/discharge current monitoring 20mΩ Capacitor CICT Delay time setting 0.01µF 0.47µF Capacitor CREG Output voltage fluctuation countermeasure 4.7µF 0.47µF 5) Adjustment should be performed in conjunction with the microprocessor. Resistor RRST Delay time setting 47kΩ 10kΩ 10MΩ Capacitor CRST Delay time setting 0.1µF Resistor RCF Power supply fluctuation countermeasure 1kΩ 500Ω Capacitor CCF Power supply fluctuation countermeasure 0.1µF 0.047µF Note: When designing applications, due consideration should be given to safety. Rev.1.0, Sep.19.2003, page 33 of 34 2) RIN2 and CIN2 should be set to the same value. 3) The upper value for confirmation of overcurrent operation should be adjusted as necessary. 3) The upper value for confirmation of overcurrent operation should be adjusted as necessary. 3) The upper value for confirmation of overcurrent operation should be adjusted as necessary. M61044FP Package Dimensions 16P2X Note : Please contact Renesas Technology Corporation for further details. Rev.1.0, Sep.19.2003, page 34 of 34 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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