20121613131275406

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BST52
TRANSISTOR (NPN)
1. BASE
FEATURES
z Low Voltage
z High Current
z Integrated Diode and Resistor
2. COLLECTOR
3. EMITTER
APPLICATIONS
z Industrial Switching Applications: Print Hammer,
Solenoid, Relay and Lamp Driving
MARKING:AS3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
90
V
VCEO
Collector-Emitter Voltage
80
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
RθJA
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Test conditions
Min
Typ
Max
Unit
IC=100µA,IE=0
90
V
80
V
Collector-emitter sustain voltage
VCES
VBE=0,IC=100µA
Collector cut-off current
ICES
VBE=0, VCE=80V
50
nA
Emitter cut-off current
IEBO
VEB=4V,IC=0
50
nA
DC current gain
hFE
VCE=10V, IC=150mA
1000
VCE=10V, IC=500mA
2000
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=0.5mA
1.3
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=0.5mA
1.9
V
Transition frequency
fT
VCE=5V,IC=500mA, f=100MHz
200
MHz
A,Nov,2010