JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L MJD127 Plastic-Encapsulate Transistors TO-252-2L TRANSISTOR (PNP) FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-10mA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 µA Collector-emitter cut-off current ICEO VCE=-50V,IB=0 -10 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-4V,IC=-4A 1000 VCE=-4V,IC=-8A 100 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(2) 12000 VCE(sat) 1 * IC=-4A,IB=-16mA -2 V VCE(sat) 2 * IC=-8A,IB=-80mA -4 V IC=-8A,IB=-80mA -4.5 V VCE=-4V,IC=-4A -2.8 V VCB=-10V,IE=0,f=0.1MHz 300 pF VBE(sat) * * Base-emitter voltage VBE Collector output capacitance Cob *Pulse Test: Pulse Width≤380µs, Duty Cycle≤2% www.cj-elec.com 1 C,Oct,2014 Typical Characteristics Typical Characteristics Static Characteristics -5 -360uA hFE DC CURRENT GAIN -280uA -240uA -200uA -160uA -2 -120uA Ta=100℃ 1000 Ta=25℃ 100 -80uA -1 IC 10000 -320uA -3 —— COMMON EMITTER VCE= -4V -400uA -4 IC (A) hFE 100000 COMMON EMITTER Ta=25℃ COLLECTOR CURRENT MJD127 10 IB=-40uA -0 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE IC β=100 VCEsat IC -0.1 β=100 -100 (mA) -8000 -1000 COLLECTOR CURRENT IC —— —— (mA) Ta=100 ℃ IC -8000 IC (mA) —— VBE IC (mA) COMMON EMITTER VCE=-4V -1000 Ta=25℃ -1 Ta=100 ℃ β=250 -0.1 -30 -100 -1000 COLLECTOR CURRENT 500 Cob —— IC -100 -30 -0.5 -8000 T =2 5℃ a COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -10 IC -8000 -1000 IC Ta=25℃ -1 -0.01 -30 -8000 -1000 COLLECTOR CURRENT VBEsat -10 Ta=25℃ -100 -100 COLLECTOR CURRENT Ta=100 ℃ -0.1 -30 -10 T =1 00℃ a COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) VCEsat -10 1 -5 VCE (V) -1.0 -1.5 -2.0 BASE-EMMITER VOLTAGE VBE (V) (mA) VCB PC 2.0 —— Ta COLLECTOR POWER DISSIPATION PC (W) f=1MHz IE=0/IC=0 Ta=25 ℃ 100 CAPACITANCE CT (pF) Cob 10 -0.1 1.0 0.5 0.0 -1 REVERSE VOLTAGE www.cj-elec.com 1.5 -10 V -20 (V) 0 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Oct,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. C,Oct,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 C,Oct,2014