datasheet

SKiM306GD12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Ts = 25 °C
410
A
Ts = 70 °C
333
A
300
A
ICnom
ICRM
VGES
SKiM® 63
tpsc
Trench IGBT Modules
SKiM306GD12E4
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
900
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Ts = 25 °C
302
A
Ts = 70 °C
240
A
300
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +150°C
IFRM
IFRM = 3xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1620
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
700
A
-40 ... 125
°C
2500
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 300 A
VGE = 15 V
chiplevel
VGE = 15 V
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
3.5
4.0
m
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 12 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
VCC = 600 V
IC = 300 A
RG on = 1 
RG off = 1 
di/dton = 6590 A/µs
di/dtoff = 4000 A/µs
Tj = 25 °C
5
5.2
5.5
m
5.8
6.5
V
0.1
0.3
mA
Tj = 150 °C
mA
f = 1 MHz
17.60
nF
f = 1 MHz
1.16
nF
f = 1 MHz
0.94
nF
1700
nC
2.5

Tj = 150 °C
252
ns
Tj = 150 °C
44
ns
Tj = 150 °C
19
mJ
Tj = 150 °C
506
ns
Tj = 150 °C
70
ns
Tj = 150 °C
39
per IGBT
mJ
0.116
K/W
GD
© by SEMIKRON
Rev. 4 – 23.07.2013
1
SKiM306GD12E4
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 300 A
VGE = 0 V
chiplevel
VF0
rF
SKiM® 63
IRRM
Trench IGBT Modules
SKiM306GD12E4
Qrr
Err
Rth(j-s)
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
typ.
max.
Unit
Tj = 25 °C
2.1
2.5
V
Tj = 150 °C
2.1
2.4
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.8
3.2
m
3.9
4.3
m
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 8000 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
448
A
47
µC
21
mJ
0.218
K/W
Module
LCE
RCC'+EE'
Features
min.
9
terminal-chip
13
nH
Ts = 25 °C
0.3
m
Ts = 125 °C
0.5
m
761
g
w
Temperature Sensor
R100
TSensor = 100 °C (R25 = 5 k)
339

B100/125
R(T) = R100exp[B100/125(1/T-1/373)];
T[K];
4096
K
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +150°C
GD
2
Rev. 4 – 23.07.2013
© by SEMIKRON
SKiM306GD12E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 23.07.2013
3
SKiM306GD12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4 – 23.07.2013
© by SEMIKRON
SKiM306GD12E4
SKIM 63
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 23.07.2013
5