ROHM QS5Y2

Midium Power Transistors (±50V / ±3A)
QS5Y2
 Structure
NPN/PNP Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
TSMT5
 Features
1) Low saturation voltage, typically
V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)
V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA)
(1) Base
(2) Collector
(3) Emitter
2) High speed switching
Abbreviated symbol : Y02
 Applications
Low Frequency Amplifier
Driver
 Packaging specifications
Type
 Inner circuit (Unit : mm)
Package
TSMT5
Code
TR
Basic ordering unit (pieces) 3000
(5)
(4)
Tr.1
 Absolute maximum ratings (Ta = 25C)
<Tr.1>
Symbol
Limits
Unit
Collector-base voltage
Parameter
VCBO
-50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
-50
-6
-3
-6
V
V
A
A
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
IC
ICP *1
50
6
V
V
3
6
A
A
Collector current
DC
Pulsed
VEBO
IC
ICP *1
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
(1)
Tr.2
(2)
(3)
<Tr.2>
Parameter
Collector current
DC
Pulsed
<Tr.1 and Tr.2>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
Symbol
PD
*2
PD
PD
*3
Tj
Tstg
*3
Limits
Unit
0.5
1.25
W/Total
W/Total
0.9
W/Element
150
-55 to 150
C
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
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1/7
2010.11 - Rev.A
QS5Y2
Data Sheet
Electrical characteristics (Ta=25°C)
<Tr.1>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
Parameter
BVCEO
-50
-
-
V
IC= -1mA
Conditions
Collector-base breakdown voltage
BVCBO
-50
-
-
V
IC= -100μA
Emitter-base breakdown voltage
BVEBO
-6
-
-
V
IE= -100μA
Collector cut-off current
ICBO
-
-
-1
A
VCB= -50V
Emitter cut-off current
IEBO
A
VEB= -4V
-
-
-1
VCE(sat)*1
-
-200
-400
hFE
180
-
450
-
VCE= -3V, I C= -50mA
-
300
-
MHz
VCE= -10V
IE=500mA, f=100MHz
Cob
-
24
-
pF
Turn-on time
ton *2
-
45
-
ns
Storage time
tstg *2
-
250
-
ns
t f *2
-
35
-
ns
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 50V
Emitter cut-off current
IEBO
-
-
1
A
VEB= 4V
*1
VCE(sat)
-
130
350
hFE
180
-
450
-
-
320
-
MHz
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Fall time
fT
*1
mV IC=-1A, IB=-50mA
VCB= -10V, I E=0A
f=1MHz
IC= -1.5A, I B1= -150mA,
_ -12V
IB2=150mA, VCC ~
*1 Pulsed
*2 See switching time test circuit
<Tr.2>
Parameter
Collector-emitter staturation voltage
DC current gain
Transition frequency
fT
*1
mV IC= 1A, IB= 50mA
Collector output capacitance
Cob
-
13
-
pF
Turn-on time
ton *2
-
50
-
ns
Storage time
tstg *2
-
450
-
ns
t f *2
-
80
-
ns
Fall time
Conditions
VCE= 3V, IC= 50mA
VCE= 10V
IE=-500mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
IC= 1.5A, I B1= 150mA,
_ 12V
IB2=-150mA, V CC ~
*1 Pulsed
*2 See switching time test circuit
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2/7
2010.11 - Rev.A
QS5Y2
Data Sheet
Electrical characteristic curves (Ta = 25C)
〈Tr.1〉
Fig.1 Typical Output Characteristics
Fig.2 DC Current Gain vs. Collector Current ( I )
-5.0mA
-3.0mA
-4.0mA
-0.5
1000
Ta=25°C
-0.4
-2.0mA
-0.3
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
-2.5mA
-1.5mA
-0.2
-1.0mA
100
VCE= -5V
-3V
-0.1
IB=-0.5mA
Ta=25°C
10
0.0
0
-0.5
-1
-1.5
-1
-2
-10
Fig.3 DC Current Gain vs. Collector Current ( II )
-10000
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
-1
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
VCE= -3V
DC CURRENT GAIN : hFE
-1000
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE : VCE[V]
100
Ta=125°C
75°C
25°C
-40°C
10
Ta=25°C
-0.1
IC/IB=50
20
10
-0.01
-0.001
-1
-10
-100
-1000
-10000
-1
-10
COLLECTOR CURRENT : IC[mA]
-100
-1000
-10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current
Fig.6 Ground Emitter Propagation Characteristics
10000
-1
VCE= -3V
COLLECTOR CURRENT : IC[mA]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
-100
-0.1
-0.01
Ta=125°C
75°C
1000
Ta=125°C
75°C
25°C
-40°C
100
10
25°C
-40°C
IC/IB=20
1
-0.001
-1
-10
-100
-1000
0
-10000
-1
-1.5
BASE TO EMITTER VOLTAGE : VBE[V]
COLLECTOR CURRENT : IC[mA]
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©2010 ROHM Co., Ltd. All rights reserved.
-0.5
3/7
2010.11 - Rev.A
QS5Y2
Data Sheet
Fig.8 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.7 Gain Bandwidth Product vs. Emitter Current
1000
1000
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
TRANSITION FREQUENCY : fT[MHz]
Ta=25°C
VCE= -10V
100
10
Cib
100
Cob
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
1
10
100
1000
-0.1
-1
-10
-100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
-10
1ms
COLLECTOR CURRENT : IC[A]
10ms
-1
100ms
DC Ta=25°C
(Mounted on a
recommended land)
-0.1
Ta=25°C
When one element operated
Single non repetitive pulse
-0.01
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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4/7
2010.11 - Rev.A
QS5Y2
Data Sheet
〈Tr.2〉
3.0mA
Fig.1 Typical OutputCharacteristics
2.5mA
5mA
0.50
Fig.2 DC Current Gain vs. Collector Current ( I )
2.0mA
1000
Ta=25°C
1.5mA
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
0.40
0.30
1.0mA
0.20
VCE=5V
3V
100
IB=0.5mA
0.10
Ta=25°C
0.00
10
0
0.5
1
1.5
2
1
10
COLECTOR TO EMITTER VOLTAGE :VCE[V]
10000
1
1000
VCE=3V
Ta=25°C
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
DC CURRENT GAIN : hFE
1000
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
Fig3. DC Current Gain vs. Collector Current ( II )
100
Ta=125°C
75°C
25°C
-40°C
0.1
0.01
IC/IB=50
20
10
0.001
10
1
10
100
1000
1
10000
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
Fig.6 Ground Emitter Propagation Characteristics
10000
1
VCE=3V
COLLECTOR CURRENT : IC[mA]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
100
COLLECTOR CURRENT : IC[mA]
0.1
Ta=125°C
0.01
75°C
25°C
1000
Ta=125°C
75°C
25°C
100
-40°C
10
-40°C
IC/IB=20
1
0.001
1
10
100
1000
0
10000
COLLECTOR CURRENT : IC[mA]
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©2010 ROHM Co., Ltd. All rights reserved.
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE[V]
5/7
2010.11 - Rev.A
QS5Y2
Data Sheet
Fig.8 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.7 Gain Bandwidth Product vs. Emitter Current
1000
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
1000
TRANSITION FREQUENCY : fT[MHz]
Ta=25°C
VCE=10V
100
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
100
10
Cob
1
10
100
1000
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
1ms
COLLECTOR CURRENT : IC [A]
10ms
1
100ms
DC Ta=25°C
(Mounted on a
recommended land)
0.1
Ta=25°C
When one element operated
Single non repetitive pulse
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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6/7
2010.11 - Rev.A
QS5Y2
Data Sheet
 Switching time test circuit
RL=8.2Ω
<Tr.1>
IB1
VIN
IC
Pw
VCC~_ -12V
IB2
_ 50μs
Pw ~
DUTY CYCLE≦1%
IB2
BASE CURRENT WAVEFORM
IB1
ton
COLLECTOR CURRENT WAVEFORM
tstg
tf
90%
IC
10%
<Tr.2>
RL=8.2Ω
VIN
I B1
IC
V CC~
_ 12V
IB2
Pw
Pw ~
_50μs
DUTY CYCLE≦1%
BASE CURRENT WAVEFORM
IB1
IB2
COLLECTOR CURRENT WAVEFORM
ton
tstg
tf
90%
IC
10%
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2010.11 - Rev.A
Notice
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R1010A