SSF2316E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package DFN3×3-8L Bottom View APPLICATIONS ●Battery protection ●Load switch ●Power management Pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2316E SSF2316E DFN3×3-8L - - - ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A IDM 40 A PD 1.4 W TJ,TSTG -55 To 150 ℃ R θJA 83 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev. 1.0 SSF2316E 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±8V,V DS=0V ±10 μA VGS(th) VDS=VGS,ID=250μA 1.3 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS 0.5 VGS=4.5V, ID=4A 17 23 mΩ VGS=4V, ID=4A 18 24 mΩ VGS=3.1V, ID=4A 20 30 mΩ VGS=2.5V, ID=2A 24 35 mΩ VDS=10V,ID=3.5A 11 S 900 PF 350 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss V DS=8V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 150 PF Turn-on Delay Time td(on) 15 nS Turn-on Rise Time tr 100 nS 60 nS 90 nS 20 nC 2.5 nC 3 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd V DS=10V,ID=7A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=7A 0.83 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev. 1.0 V SSF2316E 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr td(on) Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2: Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev. 1.0 SSF2316E 20V Dual N-Channel MOSFET DFN3×3-8L PACKAGE INFORMATION TOP VIEW BOTTOM VIEW COMMON DIMENSIONS(MM) SIDE VIEW PKG. REF. A A1 A3 D E b L D2 E2 e W： VERY VERY THIN MIN. NOM. MAX. 0.70 0.75 0.80 0.00 － 0.05 0.2REF. 2.95 3.00 3.05 2.95 3.00 3.05 0.25 0.30 0.35 0.30 0.40 0.50 2.30 2.45 2.55 2.50 1.65 1.75 0.65BSC NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact www.goodark.com Page 4 of 4 Rev. 1.0