SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic Diagram GENERAL FEATURES ● VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ● High Power and current handling capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3612E SSF3612E SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 25 V Gate-Source Voltage V GS ±12 V ID 11 A IDM 50 A PD 3.1 W TJ,TSTG -55 To 150 ℃ R θJA 40 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS V DS=25V,VGS=0V www.goodark.com Page 1 of 4 25 V 1 μA Rev.1.0 SSF3612E 25V N-Channel MOSFET Gate-Body Leakage Current Gate-Source Breakdown Voltage IGSS VGS=±10V,VDS=0V 10 BVGSO VDS=0V, IG=±250uA ±12 VGS(th) VDS=VGS,ID=250μA 1 uA V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS 1.4 2.5 VGS=10V, ID=5A 9.3 12 VGS=4.5V, ID=4A 13.3 17 VGS=4V, ID=3A 14.9 20 VDS=5V,ID=11A 5 V mΩ 15 S 542 PF 291 PF 206 PF 1.5 Ω 5.98 nS 4.42 nS 18.4 nS DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance V DS=10V,VGS=0V, F=1.0MHz VDS=0V,VGS=0V, F=1.0MHz Rg SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time VDD=10V,V GS=10V, RGEN=3Ω，RL=10Ω td(off) Turn-Off Fall Time tf 4.8 nS Total Gate Charge Qg 10.3 nC Gate-Source Charge Qgs 2.7 nC Gate-Drain Charge Qgd 3.6 nC VDS=10V,ID=4A,VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1.7A 0.76 0.9 V 11 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSF3612E 25V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin Vgs Rgen D Vout G S Figure 1: Switching Test Circuit Z thJA Normalized Transient Thermal Resistance Figure 2: Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF3612E 25V N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0