SSFN2269 20V Dual P-Channel MOSFET DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-3.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V Schematic Diagram ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management DFN2X2-6L PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFN2269 SSFN2269 DFN2X2-6L － － － ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±8 V ID -3.3 A IDM -20 A PD 1.5 W TJ,TSTG -55 To 150 ℃ R θJA 83 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.1 SSFN2269 20V Dual P-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V,V GS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,V DS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.7 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-2A 70 90 mΩ VGS=-2.5V, ID=-2A 91 120 mΩ ON CHARACTERISTICS (Note 3) Forward Transconductance gFS V DS=-5V,ID=-2A -0.4 3 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-10V,V GS=0V, F=1.0MHz 530 636 PF 100 120 PF Output Capacitance Coss Reverse Transfer Capacitance Crss 60 72 PF Turn-on Delay Time td(on) 6 7.2 nS Turn-on Rise Time tr 12 14.4 nS 20 24 nS 6 7.2 nS 5.5 6.6 nC 1.0 1.2 nC 1.5 1.8 nC -1 V SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=-10V,ID=-2A VGS=-4.5V,R GEN=2Ω VDS=-10V,ID=-2A, VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.1 SSFN2269 20V Dual P-Channel MOSFET ELECTRICAL AND THERMAL CHARACTERISTICS Vdd ton tr td(on) Rl Vin Vgs Rgen toff tf td(off) D Vout 90% VOUT 90% INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit R(t),Normalized Effective Transient Thermal Impedance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.1 SSFN2269 20V Dual P-Channel MOSFET DFN2X2-6L PACKAGE INFORMATION Top View Bottom View Side View Dimensions In Millimete rs(mm) Symbol Min. Nom. Max. A 0.70 0.75 0.80 A1 0.00 -- 0.05 A3 0.20 REF. D 1.95 2.00 2.05 E D2 1.95 0.44 2.00 0.59 2.05 0.69 E2 0.84 0.99 1.09 b 0.25 0.30 0.35 L e 0.175 0.275 0.65 BSC 0.375 NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.1