RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006 Features • • • • VDSS : 500 V RDS(on) : 1.5 Ω (MAX.) ID : 5 A Surface mount package (MP-3A) Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications • Lighting ballast, SMPS, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit VDSS VGSS ID 500 ±30 5 V V A ID (pulse)Note1 IAP 20 5 A A Channel dissipation Channel temperature Storage temperature Pch Tch Tstg 62.5 150 –55 to +150 W °C °C Channel to case thermal impedance θch-c 2.0 °C/W Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Note: 1. Pulse width limited by safe operating area. Rev.2.00, Mar 14, 2006, page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 200 µH Channel to case RJK5003DPD Electrical Characteristics (Tch = 25°C) Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Note: 2. Pulse test Rev.2.00, Mar 14, 2006, Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min. 500 — — 3.0 — Typ. — — — 3.5 1.3 Max. — 1 ±0.1 4.0 1.5 Unit V mA µA V Ω Ciss Coss Crss td(on) tr td(off) tf VDF — — — — — — — — 550 60 10 20 20 60 25 1.0 — — — — — — — 1.5 pF pF pF ns ns ns ns V page 2 of 6 Test conditions ID = 1 mA, VGS = 0 V VDS = 500 V, VGS = 0 V VGS = ±25 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID= 2 A, VGS = 10 VNote2 VDS = 25 V, VGS= 0 V, f = 1 MHz VDD = 200 V, ID = 2 A, VGS = 10 V RG = 25 Ω IF = 2 A, VGS = 0 V Note2 RJK5003DPD Performance Curves Power vs. Temperature Derating Maximum Safe Operating Area 100 PW Drain Current ID (A) 60 50 40 30 20 0 10 10 0 µs DC 1 0.1 0 50 100 Operation in this area is limited by RDS(on) 8 150 0.01 1 200 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Output Characteristics 5 VGS = 20 V Tc = 25°C Pulse Test VGS = 20 V 7V 10 V 10 V 7V PDS = 62.5 W 6V 6 5V 4 2 5V 4 6V 3 Tc = 25°C Pulse Test 2 1 4V 4V 0 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage (Typical) Static Drain to Source on State Resistance vs. Drain Current (Typical) 20 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) 0 Tc = 25°C Pulse Test 16 ID = 8 A 12 8 5A 3A 4 0 0 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00, µs Tc = 25°C Single pulse 10 Drain Current ID (A) = 10 10 Drain Current ID (A) Channel Dissipation Pch (W) 70 Mar 14, 2006, page 3 of 6 20 4 Tc = 25°C Pulse Test 3.2 2.4 VGS = 10 V 1.6 20 V 0.8 0 10–1 100 101 Drain Current ID (A) 102 RJK5003DPD Capacitance vs. Drain to Source Voltage (Typical) Transfer Characteristics (Typical) 103 Tc = 25°C VDS = 10 V 8 Pulse Test Capacitance (pF) Ciss 6 4 2 0 2 4 6 10 102 103 Switching Characteristics (Typical) Gate to Source Voltage vs. Gate Charge (Typical) Tch = 25°C VDD = 200 V VGS = 10 V RG = 25 Ω Pulse Test 3 2 102 7 5 td(off) tf 3 td(on) tr 101 0 10 2 3 5 7 16 Tch = 25°C ID = 5 A VDS = 100 V 12 200 V 8 400 V 4 0 101 0 4 8 12 16 20 Drain Current ID (A) Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage Characteristics (Typical) Breakdown Voltage vs. Channel Temperature (Typical) 10 Source Current IDR (A) Crss Drain to Source Voltage VDS (V) 2 VGS = 0 V Pulse Test Ta = 25°C 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2 Source to Drain Voltage VSD (V) Rev.2.00, Coss 101 Gate to Source Voltage VGS (V) 103 7 5 Switching Time (ns) 8 Gate to Source Voltage VGS (V) 0 102 Tch = 25°C f = 1 MHz VGS = 0 V 0 10 100 101 Mar 14, 2006, page 4 of 6 Drain to Source Breakdown Voltage V(BR)DSS (t°C) Drain to Source Breakdown Voltage V(BR)DSS (25°C) Drain Current ID (A) 10 24 1.4 VGS = 0 V ID = 1 mA 1.2 1.0 0.8 0.6 0.4 –75 –25 25 75 125 Channel Temperature Tch (°C) 175 Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source on State Resistance RDS(on) (t°C) Static Drain to Source on State Resistance vs. Channel Temperature (Typical) Transient Thermal Impedance θth(ch-c) (°C/W) Drain to Source on State Resistance RDS(on) (25°C) RJK5003DPD 101 VGS = 10 V 7 ID = 2 A 5 Pulse Test 4 3 2 10 0 7 5 4 3 2 10–1 –75 –25 25 75 125 175 Gate to Source Cutoff Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10 V ID = 1 mA 4.0 3.0 2.0 1.0 0 –75 Channel Temperature Tch (°C) –25 25 75 125 175 Channel Temperature Tch (°C) Transient Thermal Impedance vs. Pulse Width 101 7 5 D=1 3 2 0.5 100 0.2 7 5 0.1 3 2 10–1 PDM 0.05 0.02 0.01 Single pulse D= PW T PW T 10–4 2 3 5710–3 2 3 5 710–2 2 3 5 7 10–12 3 5 7100 2 3 5 7 101 Pulse Width PW (s) Switching Time Measurement Circuit 90% Vout Monitor Vin Monitor RG Switching Waveform D.U.T. Vin Vout VDD Mar 14, 2006, page 5 of 6 10% 10% 90% td(on) Rev.2.00, 10% RL tr 90% td(off) tf RJK5003DPD Package Dimensions Previous Code 0.76 ± 0.2 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 0.76 MASS[Typ.] 0.32g Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name - 00 - direction (J or Q) - 2 Standard order code example RJK5003DPD-00-J2 Note: It is the case of a standard. In addition, please confirm the packing specification for every product about the contents of packing. Rev.2.00, Mar 14, 2006, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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