FS10VS-9A High-Speed Switching Use Nch Power MOS FET REJ03G0268-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 450 V rDS(ON) (max) : 0.73 Ω ID : 10 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain Source Drain 3 Applications DC-DC, PDP, lamp ballast, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current Maximum power dissipation Channel temperature Storage temperature Mass Rev.1.00, Aug.20.2004, page 1 of 6 Symbol VDSS VGSS ID IDM IDA PD Tch Tstg — Ratings 450 ±30 10 30 10 100 – 55 to +150 – 55 to +150 1.2 Unit V V A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 200 µH Typical value FS10VS-9A Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Rev.1.00, Aug.20.2004, page 2 of 6 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min. 450 ±30 — — 2.5 — — 5.4 — — — — — — — — — Typ. — — — — 3.0 0.58 2.90 9.0 1100 120 25 20 30 140 40 1.5 — Max. — — ±10 1.0 3.5 0.73 3.65 — — — — — — — — 2.0 1.25 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 200 V, ID = 5 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 5 A, VGS = 0 V Channel to case FS10VS-9A Performance Curves Drain Power Dissipation Derating Curve Maximum Safe Operating Area 2 Drain Current ID (A) 100 80 60 40 20 0 0 50 150 100 200 tw =10µs 1 10 7 5 3 2 100µs 100 7 5 3 2 Tc = 25°C -1 1ms DC Single Pulse 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 20 16 10 Tc = 25°C Pulse Test 6V Drain Current ID (A) 10 7 5 3 2 10 PD = 100W VGS = 20V,10V,8V Drain Current ID (A) Drain Power Dissipation PD (W) 120 12 8 5V 4 PD = 100W 8 VGS = 20V,10V, 8V,6V 5V 6 4 2 Tc = 25°C Pulse Test 10 20 30 40 4 8 12 16 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 40 Tc = 25°C Pulse Test 32 24 16 ID = 15A 8 0 0 0 0 50 10A 5A 4 8 12 16 Gate-Source Voltage VGS (V) Rev.1.00, Aug.20.2004, page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) 0 0 20 2.0 Tc = 25°C Pulse Test 1.6 1.2 VGS = 10V 20V 0.8 0.4 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Drain Current ID (A) FS10VS-9A Forward Transfer Admittance vs. Drain Current (Typical) Tc = 25°C VDS = 10V Pulse Test 16 12 8 4 0 0 4 8 12 16 75°C 0 125°C 10 7 5 3 2 10 VDS = 10V Pulse Test -1 10 -1 2 3 5 7 10 0 2 3 5 7 10 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 1 5 Ciss 2 10 7 5 3 2 Coss 101 Tch = 25°C Crss 7 f = 1MHz 5 VGS = 0V 3 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 3 2 td(off) 2 10 7 5 tf 3 2 td(on) tr 101 Tch = 25°C, VDD = 200V 7 VGS = 10V, RGEN = RGS = 50Ω 5 -1 0 1 10 2 3 5 7 10 2 3 5 7 10 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 40 Tch = 25°C ID = 10A 16 12 Source Current IS (A) Gate-Source Voltage VGS (V) Tc = 25°C 101 7 5 3 2 Drain Current ID (A) 103 7 5 3 2 20 2 10 7 5 3 2 Gate-Source Voltage VGS (V) 3 2 Capacitance (pF) 20 Switching Time (ns) Drain Current ID (A) 20 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) VDS = 100V 200V 8 400V 4 32 Tc = 125°C 24 75°C 16 25°C 8 VGS = 0V Pulse Test 0 0 20 40 60 80 Gate Charge Qg (nC) Rev.1.00, Aug.20.2004, page 4 of 6 100 0 0 0.8 1.6 2.4 3.2 Source-Drain Voltage VSD (V) 4.0 On-State Resistance vs. Channel Temperature (Typical) 1 10 7 VGS = 10V ID = 5A 5 Pulse Test 3 2 100 7 5 3 2 10 –1 –50 0 50 100 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (t°C) Drain-Source On-State Resistance rDS(ON) (25°C) FS10VS-9A 150 5.0 4.0 3.0 2.0 1.0 0 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 Transient Thermal Impedance Zth(ch-c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) 1.4 –50 0 50 100 Transient Thermal Impedance Characteristics 1 10 7 5 3 2 D = 1.0 100 0.5 7 5 0.2 3 2 0.1 10 –1 0.05 0.02 0.01 Single Pulse 7 5 3 2 10–2 –4 –3 –2 –1 0 1 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 7 10 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) VDS = 10V ID = 1mA 90% D.U.T. RGEN RL Vin Vout RGS 10% 10% 10% VDD 90% td(on) Rev.1.00, Aug.20.2004, page 5 of 6 tr 90% td(off) tf FS10VS-9A Package Dimensions As of January, 2003 Unit: mm (1.5) 7.8 7.0 + 0.3 – 0.5 2.49 ± 0.2 0.2 0.1 +– 0.1 1.7 7.8 6.6 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 (1.4) 4.44 ± 0.2 10.2 ± 0.3 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Package Code JEDEC JEITA Mass (reference value) LDPAK (S)-(1) — — 1.30 g Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 1000 Type name – T +Direction (1 or 2) +1 Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example FS10VS-9A-T11 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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