AO4924 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 19.5mΩ TM FET2 VDS(V) = 30V ID=7.3A (VGS = 10V) <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Top View S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 8 7 6 5 D2 D1 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FET1 Drain-Source Voltage VDS 30 Gate-Source Voltage TA=70°C Pulsed Drain Current B Units V V VGS ±12 9.0 ±12 7.3 IDSM 7.2 5.9 TA=25°C Continuous Drain Current A Max FET2 30 A IDM 40 40 B IAR 16 12 A Repetitive avalanche energy L=0.3mH B TA=25°C EAR 38 22 mJ 2.0 2.0 1.3 1.3 -55 to 150 -55 to 150 Avalanche Current Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics FET2 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL W °C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W AO4924 FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=4.5V, VDS=5V 40 TJ=125°C VGS=10V, ID=9A RDS(ON) Static Drain-Source On-Resistance Max 0.01 0.1 5 10 0.1 µA 1.85 2.4 V 13 15.8 20.0 25.0 15.7 19.5 mΩ 0.6 V 4.5 A 30 VDS=24V, VGS=0V IDSS ID(ON) Typ TJ=125°C VGS=4.5V, ID=7A V Forward Transconductance VDS=5V, ID=9A 64 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode + Schottky Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA A gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units mΩ S 1885 pF 224 pF 92 pF Ω 1.6 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 24.0 31 Qg(4.5V) Total Gate Charge 12.0 nC 3.9 nC 4.2 nC 5.5 ns 4.7 ns 24.0 ns 4.0 ns VGS=10V, VDS=15V, ID=9A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=9A, dI/dt=300A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs 6.8 VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω 13 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on T(J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: May 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4924 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 4.5V 4V 20 ID(A) ID (A) 60 3.5V 40 15 10 20 5 VGS=3V 0 125° 0 0 1 2 3 4 5 1 1.5 VDS (Volts) 20 2.5 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V 17 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 14 11 VGS=10V 8 VGS=10V ID=9A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=9A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 25°C 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4924 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 2000 VDS=15V ID=9A 6 Capacitance (pF) VGS (Volts) 8 4 2 1500 1000 Crss 500 0 Coss 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 100.00 100µ RDS(ON) limited 1s 1.00 10s TJ(Max)=150°C TA=25°C 0.10 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics DC 30 TJ(Max)=175°C TC=25°C 40 1ms Power (W) 10.00 5 50 10µs ID (Amps) Ciss 30 20 10 0.01 0.01 0.1 1 VDS (Volts) 10 100 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 AO4924 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 20A 0.8 VDS=24V 0.7 VSD(V) IR (A) 1.0E-03 VDS=12V 1.0E-04 0.6 0.5 10A 5A 0.4 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature di/dt=800A/us 25 125ºC Qrr (nC) 20 12 12 10 10 8 8 25ºC 15 6 Qrr 125ºC 10 Irm 25ºC 5 50 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 di/dt=800A/us 2 trr 25ºC 6 4 4 2 2 0 0 2.5 125ºC 1.5 S 30 0 trr (ns) DYNAMIC 50 Irm (A) 0 1 125ºC S 0.5 25ºC 0 5 10 15 20 25 5 10 10 125ºC 25ºC 10 5 Qrr 0 200 400 600 6 125º 4 25ºC 2 Irm 0 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 30 2.5 Is=20A 2 25ºC trr (ns) 15 25 12 Irm (A) Qrr (nC) 8 Is=20A 20 15 125ºC 20 15 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 9 1.5 S 0 trr 6 25ºC 3 125ºC 1 S 0 0 200 400 600 800 0.5 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt AO4924 FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C TJ=125°C VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=7.3A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1 nA 1.5 V A 20 24 28 34 23.5 29 mΩ 1 V 4.5 A mΩ 26 0.71 900 S 1100 pF 88 VGS=0V, VDS=0V, f=1MHz 0.95 1.5 Ω 10 12 nC VGS=4.5V, VDS=15V, ID=7.3A 1.8 nC pF 65 Gate Source Charge µA VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs 5 100 VGS=10V, ID=7.3A gFS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ pF Qgd Gate Drain Charge 3.75 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs VGS=10V, VDS=15V, RL=2Ω, RGEN=6Ω 3.5 ns 21.5 ns IF=7.3A, dI/dt=100A/µs 16.8 20 8 12 Turn-Off Fall Time 2.7 ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev2: May 2011 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4924 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 4 VGS=2V 10 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 25 Normalized On-Resistance 1.8 VGS=4.5V 20 VGS=10V 15 ID=6A VGS=4.5V 1.5 1.2 VGS=10V ID=7.3A 0.9 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 25 50 75 100 125 150 175 1.0E+01 55 1.0E+00 50 ID=7.3A 125°C 40 125°C IS (A) 45 35 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics 30 RDS(ON) (mΩ ) 0.5 1.0E-01 1.0E-02 1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS 25 1.0E-04 25°C OR USES AS CRITICAL 20 25°COF ITS PRODUCTS. AOS RESERVES THE RIGHT1.0E-05 OUT OF SUCH APPLICATIONS OR USES TO IMPROVE PRODUCT DESIGN, 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics AO4924 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=7.3A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 100µs 1ms 1.00 10s TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) RDS(ON) limited 30 50 10µs 10.00 10 1s 30 20 DC 0.10 10 TJ(Max)=150°C TA=25°C 0 0.01 0.01 0.1 1 VDS (Volts) 10 0.0001 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR D=T /T THE CONSUMER MARKET.PDAPPLICATIONS OR USES AS CRITICAL on 0.01 TJ,PK=TA+PDM.ZθJA.RθJA Ton IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO RθJA=90°C/W T Single Pulse NOTICE. FUNCTIONS AND RELIABILITY WITHOUT 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4924 Gate Charge Test Circuit & Waveform Vgs VDS=15V ID=7.3A Qg 10V + + VDC - VDC Qgs Vds Qgd - DUT Vgs Crss Ig Coss Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds + DUT Vgs VDC 90% Vdd TJ(Max)=150°C TA=25°C 10% - Rg 100µs Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg In descending order DUT D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Vgs 2 AR Id Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds