Datasheet

AO4924
Asymmetric Dual N-Channel MOSFET
SRFET
General Description
Product Summary
The AO4924 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
FET1
VDS (V) = 30V
ID = 9A
RDS(ON) < 15.8mΩ
RDS(ON) < 19.5mΩ
TM
FET2
VDS(V) = 30V
ID=7.3A
(VGS = 10V)
<24mΩ
(VGS = 10V)
<29mΩ
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
S1
G1
S2
G2
1
2
3
4
D1
D1
D2
D2
8
7
6
5
D2
D1
G2
G1
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
VDS
30
Gate-Source Voltage
TA=70°C
Pulsed Drain Current B
Units
V
V
VGS
±12
9.0
±12
7.3
IDSM
7.2
5.9
TA=25°C
Continuous Drain
Current A
Max FET2
30
A
IDM
40
40
B
IAR
16
12
A
Repetitive avalanche energy L=0.3mH B
TA=25°C
EAR
38
22
mJ
2.0
2.0
1.3
1.3
-55 to 150
-55 to 150
Avalanche Current
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics FET2
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
PDSM
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
W
°C
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
AO4924
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=1mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=4.5V, VDS=5V
40
TJ=125°C
VGS=10V, ID=9A
RDS(ON)
Static Drain-Source On-Resistance
Max
0.01
0.1
5
10
0.1
µA
1.85
2.4
V
13
15.8
20.0
25.0
15.7
19.5
mΩ
0.6
V
4.5
A
30
VDS=24V, VGS=0V
IDSS
ID(ON)
Typ
TJ=125°C
VGS=4.5V, ID=7A
V
Forward Transconductance
VDS=5V, ID=9A
64
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode + Schottky Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1450
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mA
A
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
mΩ
S
1885
pF
224
pF
92
pF
Ω
1.6
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
24.0
31
Qg(4.5V) Total Gate Charge
12.0
nC
3.9
nC
4.2
nC
5.5
ns
4.7
ns
24.0
ns
4.0
ns
VGS=10V, VDS=15V, ID=9A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=9A, dI/dt=300A/µs
10
Qrr
Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs
6.8
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
13
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on T(J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
80
VDS=5V
25
6V
4.5V
4V
20
ID(A)
ID (A)
60
3.5V
40
15
10
20
5
VGS=3V
0
125°
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
20
2.5
3
3.5
4
Normalized On-Resistance
2
VGS=4.5V
17
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
14
11
VGS=10V
8
VGS=10V
ID=9A
1.8
1.6
VGS=4.5V
1.4
ID=7A
1.2
1
0.8
0
5
10
15
20
25
30
0
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
45
1.0E+02
40
1.0E+01
ID=9A
35
125°C
1.0E+00
30
IS (A)
RDS(ON) (mΩ )
25°C
125°C
25
25°C
1.0E-01
1.0E-02
20
1.0E-03
15
1.0E-04
10
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
2000
VDS=15V
ID=9A
6
Capacitance (pF)
VGS (Volts)
8
4
2
1500
1000
Crss
500
0
Coss
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
100.00
100µ
RDS(ON)
limited
1s
1.00
10s
TJ(Max)=150°C
TA=25°C
0.10
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
DC
30
TJ(Max)=175°C
TC=25°C
40
1ms
Power (W)
10.00
5
50
10µs
ID (Amps)
Ciss
30
20
10
0.01
0.01
0.1
1
VDS (Volts)
10
100
0
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.01
0.1
Ton
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
20A
0.8
VDS=24V
0.7
VSD(V)
IR (A)
1.0E-03
VDS=12V
1.0E-04
0.6
0.5
10A
5A
0.4
0.3
1.0E-05
0.2
IS=1A
0.1
1.0E-06
0
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
PARAMETERS
Junction Temperature
di/dt=800A/us
25
125ºC
Qrr (nC)
20
12
12
10
10
8
8
25ºC
15
6
Qrr
125ºC
10
Irm
25ºC
5
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
3
di/dt=800A/us
2
trr
25ºC
6
4
4
2
2
0
0
2.5
125ºC
1.5
S
30
0
trr (ns)
DYNAMIC
50
Irm (A)
0
1
125ºC
S
0.5
25ºC
0
5
10
15
20
25
5
10
10
125ºC
25ºC
10
5
Qrr
0
200
400
600
6
125º
4
25ºC
2
Irm
0
800
0
1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
30
2.5
Is=20A
2
25ºC
trr (ns)
15
25
12
Irm (A)
Qrr (nC)
8
Is=20A
20
15
125ºC
20
15
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
0
0
30
9
1.5
S
0
trr
6
25ºC
3
125ºC
1
S
0
0
200
400
600
800
0.5
0
1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
AO4924
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
TJ=55°C
TJ=125°C
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=7.3A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1
nA
1.5
V
A
20
24
28
34
23.5
29
mΩ
1
V
4.5
A
mΩ
26
0.71
900
S
1100
pF
88
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
Ω
10
12
nC
VGS=4.5V, VDS=15V, ID=7.3A
1.8
nC
pF
65
Gate Source Charge
µA
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
5
100
VGS=10V, ID=7.3A
gFS
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
pF
Qgd
Gate Drain Charge
3.75
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs
VGS=10V, VDS=15V, RL=2Ω,
RGEN=6Ω
3.5
ns
21.5
ns
IF=7.3A, dI/dt=100A/µs
16.8
20
8
12
Turn-Off Fall Time
2.7
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev2: May 2011
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4924
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
20
10V
50
40
3V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
30
2.5V
125°C
8
20
25°C
4
VGS=2V
10
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
25
Normalized On-Resistance
1.8
VGS=4.5V
20
VGS=10V
15
ID=6A
VGS=4.5V
1.5
1.2
VGS=10V
ID=7.3A
0.9
0.6
0
5
10
15
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
25
50
75
100 125 150 175
1.0E+01
55
1.0E+00
50
ID=7.3A
125°C
40
125°C
IS (A)
45
35
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics
30
RDS(ON) (mΩ )
0.5
1.0E-01
1.0E-02
1.0E-03
30
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS
25
1.0E-04 25°C OR USES AS CRITICAL
20
25°COF ITS PRODUCTS. AOS RESERVES THE RIGHT1.0E-05
OUT OF SUCH APPLICATIONS OR USES
TO IMPROVE PRODUCT DESIGN,
15
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
VSD (Volts)
Figure 6: Body-Diode Characteristics
AO4924
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=7.3A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1000
800
600
400
Crss
1
Coss
200
0
0
0
2
4
6
8
10
12
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
100µs
1ms
1.00
10s
TJ(Max)=150°C
TA=25°C
40
Power (W)
ID (Amps)
RDS(ON)
limited
30
50
10µs
10.00
10
1s
30
20
DC
0.10
10
TJ(Max)=150°C
TA=25°C
0
0.01
0.01
0.1
1
VDS (Volts)
10
0.0001 0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED
FOR
D=T
/T THE CONSUMER MARKET.PDAPPLICATIONS OR USES AS CRITICAL
on
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
Ton IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO
RθJA=90°C/W
T
Single
Pulse NOTICE.
FUNCTIONS AND RELIABILITY
WITHOUT
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4924
Gate Charge Test Circuit & Waveform
Vgs
VDS=15V
ID=7.3A
Qg
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
Vgs
Crss
Ig
Coss
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
+
DUT
Vgs
VDC
90%
Vdd
TJ(Max)=150°C
TA=25°C 10%
-
Rg
100µs
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
In descending order
DUT
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Vgs
2
AR
Id
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds