AOD607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pb- n-channel p-channel -30V VDS (V) = 30V ID = 12A (V GS=10V) -12A (V GS = -10V) RDS(ON) RDS(ON) < 25 mΩ (VGS=10V) < 37 m Ω (VGS = -10V) < 62 m Ω (VGS = -4.5V) < 34 mΩ (VGS=4.5V) free (meets ROHS & Sony 259 specifications). AOD607L is a Green Product ordering option. AOD607 and AOD607L are electrically identical. TO-252-4L D-PAK D1/D2 D1/D2 Top View Drain Connected to Tab S1 G1 G1 G2 S1 S2 n-channel p-channel S2 G2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C C Units V ±20 V 12 -12 A ID IDM 12 -12 40 -40 IAR 18 -18 A EAR 40 40 mJ PD 25 25 12.5 12.5 W 2.1 2.1 1.3 1.3 -55 to 175 -55 to 175 PDSM TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. Max p-channel -30 Symbol RθJA RθJC RθJA RθJC W °C Device n-ch n-ch n-ch Typ 19 47 4.5 Max 23 60 6 °C/W °C/W °C/W p-ch p-ch p-ch 19 47 4.5 23 60 6 °C/W °C/W °C/W AOD607 N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C 2.5 V 20 25 28 34 VGS=4.5V, ID=5A 27.5 34 VDS=5V, ID=12A 25 gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 1.7 Static Drain-Source On-Resistance Crss 5 nA RDS(ON) Output Capacitance Units 100 VGS=10V, ID=12A Coss Max V VDS=24V, V GS=0V IDSS IS Typ A 0.75 1040 VGS=0V, VDS=15V, f=1MHz VGS=10V, V DS=15V, ID=12A mΩ S 1 V 18 A 1250 pF 180 pF 110 VGS=0V, VDS=0V, f=1MHz mΩ pF 1.5 Ω 19.8 25 nC 9.8 12.5 nC 0.7 2.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 8 VGS=10V, V DS=15V, R L=1.25Ω, RGEN=3Ω 3.9 ns 17.4 ns 3.2 ns 25 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 0: March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD607 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 20 3.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 2.5 35 3.5 4 1.6 VGS=10V Normalized On-Resistance VGS=4.5V 30 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 25 20 VGS=10V 15 10 0 5 10 15 20 ID=12A 1.4 VGS=4.5V 1.2 ID=5A 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 1.0E-01 ID=12A IS (A) RDS(ON) (mΩ) 40 30 125°C 1.0E-02 25°C 125°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD607 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=12A 1250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 1000 750 500 2 Coss 250 0 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 50 ID (Amps) 10.0 1ms 10µs 10ms 0.1s 100µs 1s 10s 1.0 T J(Max)=150°C T A=25°C DC 30 20 10 0.1 0.1 1 T J(Max)=150°C T A=25°C 40 Power (W) RDS(ON) limited 10 0 0.001 100 VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.001 0.01 0.1 T on T 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOD607 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 VDS=-24V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 VGS=-10V, ID=-12A TJ=125°C Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-12A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -0.003 -1 V ±100 nA -2.4 V 30 37 42 50 50 62 mΩ -1 V -18 A 1100 pF A 17 -0.76 VGS=-10V, VDS=-15V, ID=-12A mΩ S 190 pF 122 VGS=0V, VDS=0V, f=1MHz µA -2 920 VGS=0V, VDS=-15V, f=1MHz Units -5 VGS(th) IS Max TJ=55°C IGSS RDS(ON) Typ pF 5 Ω 18.7 23 nC 9.7 11.7 nC 3.6 Qgs Gate Source Charge Qgd Gate Drain Charge 5.4 tD(on) Turn-On DelayTime 9 13 ns tr Turn-On Rise Time 25 35 ns 20 30 ns 12 18 ns 21.4 26 16 ns nC VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs IF=-12A, dI/dt=100A/µs 2.54 13 nC nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev0 : March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD607 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -4.5V -6V -10V 25 20 20 -4V -ID(A) -ID (A) VDS=-5V 25 -5V 15 -3.5V 10 15 10 5 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 80 Normalized On-Resistance VGS=-4.5V 60 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 5 1.60 70 50 40 30 VGS=-10V 20 VGS=-4.5V 1.40 ID=-5A VGS=-10V 1.20 ID=-12A 1.00 0.80 10 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 100 90 1.0E+00 ID=-12A 80 1.0E-01 70 125°C 60 125°C 50 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.0E-02 1.0E-03 40 1.0E-04 30 25°C 20 25°C 1.0E-05 10 1.0E-06 0 0.0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD607 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-12A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss Crss 250 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10 15 100µs Power (W) -ID (Amps) 30 1ms 10ms 0.1s 1s 10s 1 10 0 0.001 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 20 10 DC 0.1 0.1 30 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 1.0 25 40 TJ(Max)=150°C, TA=25°C 10.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000