AOSMD AOD607L

AOD607
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOD607 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AOD607 is Pb-
n-channel
p-channel
-30V
VDS (V) = 30V
ID = 12A (V GS=10V)
-12A (V GS = -10V)
RDS(ON)
RDS(ON)
< 25 mΩ (VGS=10V)
< 37 m Ω (VGS = -10V)
< 62 m Ω (VGS = -4.5V)
< 34 mΩ (VGS=4.5V)
free (meets ROHS & Sony 259 specifications).
AOD607L is a Green Product ordering option.
AOD607 and AOD607L are electrically
identical.
TO-252-4L
D-PAK
D1/D2
D1/D2
Top View
Drain Connected to
Tab
S1 G1
G1
G2
S1
S2
n-channel
p-channel
S2 G2
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
GS
Continuous Drain
Current G
TC=25°C
TC=100°C
Pulsed Drain Current
Avalanche Current
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
TC=100°C
TA=25°C
TA=70°C
C
Units
V
±20
V
12
-12
A
ID
IDM
12
-12
40
-40
IAR
18
-18
A
EAR
40
40
mJ
PD
25
25
12.5
12.5
W
2.1
2.1
1.3
1.3
-55 to 175
-55 to 175
PDSM
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Case B
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-30
Symbol
RθJA
RθJC
RθJA
RθJC
W
°C
Device
n-ch
n-ch
n-ch
Typ
19
47
4.5
Max
23
60
6
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
19
47
4.5
23
60
6
°C/W
°C/W
°C/W
AOD607
N-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
TJ=55°C
2.5
V
20
25
28
34
VGS=4.5V, ID=5A
27.5
34
VDS=5V, ID=12A
25
gFS
Forward Transconductance
VSD
IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
µA
1.7
Static Drain-Source On-Resistance
Crss
5
nA
RDS(ON)
Output Capacitance
Units
100
VGS=10V, ID=12A
Coss
Max
V
VDS=24V, V GS=0V
IDSS
IS
Typ
A
0.75
1040
VGS=0V, VDS=15V, f=1MHz
VGS=10V, V DS=15V, ID=12A
mΩ
S
1
V
18
A
1250
pF
180
pF
110
VGS=0V, VDS=0V, f=1MHz
mΩ
pF
1.5
Ω
19.8
25
nC
9.8
12.5
nC
0.7
2.5
nC
Qgd
Gate Drain Charge
3.5
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
19
Qrr
Body Diode Reverse Recovery Charge
IF=12A, dI/dt=100A/µs
8
VGS=10V, V DS=15V, R L=1.25Ω,
RGEN=3Ω
3.9
ns
17.4
ns
3.2
ns
25
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 0: March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4V
10V
25
20
3.5V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125°C
8
10
25°C
VGS=3V
4
5
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
35
3.5
4
1.6
VGS=10V
Normalized On-Resistance
VGS=4.5V
30
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
25
20
VGS=10V
15
10
0
5
10
15
20
ID=12A
1.4
VGS=4.5V
1.2
ID=5A
1
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
1.0E+01
1.0E+00
1.0E-01
ID=12A
IS (A)
RDS(ON) (mΩ)
40
30
125°C
1.0E-02
25°C
125°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=12A
1250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
750
500
2
Coss
250
0
Crss
0
0
4
8
12
16
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
50
ID (Amps)
10.0
1ms
10µs
10ms
0.1s
100µs
1s
10s
1.0
T J(Max)=150°C
T A=25°C
DC
30
20
10
0.1
0.1
1
T J(Max)=150°C
T A=25°C
40
Power (W)
RDS(ON)
limited
10
0
0.001
100
VDS (Volts)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.001
0.01
0.1
T on
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AOD607
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
VDS=-24V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-40
VGS=-10V, ID=-12A
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
gFS
Forward Transconductance
VSD
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-12A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
-0.003
-1
V
±100
nA
-2.4
V
30
37
42
50
50
62
mΩ
-1
V
-18
A
1100
pF
A
17
-0.76
VGS=-10V, VDS=-15V, ID=-12A
mΩ
S
190
pF
122
VGS=0V, VDS=0V, f=1MHz
µA
-2
920
VGS=0V, VDS=-15V, f=1MHz
Units
-5
VGS(th)
IS
Max
TJ=55°C
IGSS
RDS(ON)
Typ
pF
5
Ω
18.7
23
nC
9.7
11.7
nC
3.6
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
5.4
tD(on)
Turn-On DelayTime
9
13
ns
tr
Turn-On Rise Time
25
35
ns
20
30
ns
12
18
ns
21.4
26
16
ns
nC
VGS=-10V, VDS=-15V,
RL=1.25Ω, RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
2.54
13
nC
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev0 : March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD607
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
-4.5V
-6V
-10V
25
20
20
-4V
-ID(A)
-ID (A)
VDS=-5V
25
-5V
15
-3.5V
10
15
10
5
125°C
5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
0.5
80
Normalized On-Resistance
VGS=-4.5V
60
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
5
1.60
70
50
40
30
VGS=-10V
20
VGS=-4.5V
1.40
ID=-5A
VGS=-10V
1.20
ID=-12A
1.00
0.80
10
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
100
90
1.0E+00
ID=-12A
80
1.0E-01
70
125°C
60
125°C
50
-IS (A)
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
1.0E-02
1.0E-03
40
1.0E-04
30
25°C
20
25°C
1.0E-05
10
1.0E-06
0
0.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOD607
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-12A
1250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
750
500
Coss
Crss
250
0
0
0
4
8
12
16
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
5
10
15
100µs
Power (W)
-ID (Amps)
30
1ms
10ms
0.1s
1s
10s
1
10
0
0.001
100
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK =TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
20
10
DC
0.1
0.1
30
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1.0
25
40
TJ(Max)=150°C, TA=25°C
10.0
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000