AO4932 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4932 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4932 is Pb-free (meets ROHS & Sony 259 specifications). FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 19.6mΩ FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8mΩ (VGS = 10V) <23mΩ (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage ±12 Continuous Drain Current AF Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.3mH C TA=25°C Power Dissipation Junction and Storage Temperature Range V 9.0 7.2 7.2 40 40 A IAR 16 16 A mJ EAR TJ, TSTG Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State 38 38 2.0 2.0 1.3 1.3 -55 to 150 -55 to 150 Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Symbol Alpha & Omega Semiconductor, Ltd. ±20 9.0 PDSM TA=70°C Units V IDSM IDM TA=25°C TA=70°C Max FET2 30 RθJA RθJL A W °C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W www.aosmd.com AO4932 FET1 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V VDS=30V, V GS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=4.5V, VDS=5V 40 TJ=125°C VGS=10V, ID=9A Typ 0.01 0.1 5 10 µA 1.8 2.4 V 13 15.8 20.2 25.2 19.6 A VGS=4.5V, ID=7A 16 gFS Forward Transconductance VDS=5V, ID=9A 64 VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current 0.4 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1450 mΩ mΩ S 0.6 V 4.5 A 1885 pF VGS=0V, VDS=15V, f=1MHz 224 VGS=0V, VDS=0V, f=1MHz 1.6 3.0 24 31 12.0 16 pF 92 VGS=10V, V DS=15V, ID=9A mA 0.1 Static Drain-Source On-Resistance IS Units V RDS(ON) TJ=125°C Max pF Ω nC 3.9 nC Qgd Gate Drain Charge 4.2 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9A, dI/dt=300A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs 6.8 VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω 4.7 ns 24.0 ns 4.0 ns 12 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 2: June 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4932 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 10V 4.5V 4V VDS=5V 25 60 3.5V 40 ID(A) ID (A) 20 15 10 20 VGS=3V 5 0 25°C 0 0 DYNAMIC 1 2 3 4 5 1 1.5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 20 2 Normalized On-Resistance VGS=4.5V 17 RDS(ON) (mΩ) 125° 14 11 VGS=10V VGS=10V ID=9A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 8 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=9A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ) 30 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4932 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 2000 VDS=15V ID=9A 6 Capacitance (pF) VGS (Volts) 8 4 2 Ciss 1500 1000 Crss 500 0 0 5 10 15 20 Coss 0 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 50 10µs RDS(ON) limited 1.0 1ms 10ms DC TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=175°C TC=25°C 40 100µ Power (W) ID (Amps) 10.0 30 20 10 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4932 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 VDS=24V 0.7 1.0E-03 VSD(V) IR (A) 20A 0.8 VDS=12V 1.0E-04 0.6 0.5 10A 0.4 5A 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 125ºC Qrr (nC) 20 25ºC 15 Qrr 10 5 25ºC 5 10 15 20 10 10 8 8 25 2 0 0 5 Qrr 0 200 400 600 6 4 25ºC 2 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 125ºC 5 10 15 20 0 25 30 2.5 Is=20A 2 25ºC 125º Irm 0 0.5 125ºC trr (ns) 10 1 25ºC S 12 Irm (A) Qrr (nC) 25ºC 1.5 15 125ºC 15 25ºC Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 8 Is=20A 2 0 30 2.5 125ºC 6 2 10 20 di/dt=800A/us trr Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 3 4 4 0 0 12 6 125ºC Irm 12 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 9 1.5 trr 6 25ºC 3 125ºC 1 200 0.5 S 0 0 S di/dt=800A/us 50 S 30 0 trr (ns) DYNAMIC 50 Irm (A) 0 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com AO4932 FET2 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, V DS=5V 40 TJ=55°C VGS=10V, ID=9A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=7A VDS=5V, ID=9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Max µA 5 100 nA 1.7 2.3 V 13 15.8 19 23 18.6 23 A VGS=10V, V DS=15V, ID=9A mΩ 0.75 S 1 V 3 A 1250 pF 145 pF 112 VGS=0V, VDS=0V, f=1MHz mΩ 23 955 VGS=0V, VDS=15V, f=1MHz Units V VDS=30V, V GS=0V IDSS IS Typ pF 0.85 Ω 17 22 nC 9 11.7 nC 0.5 3.4 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9A, dI/dt=100A/µs 16.7 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=100A/µs 6.7 VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω 6 ns 19 ns 4.5 ns 20 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 2: June 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4932 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 45 35 10V 4.5V 40 35 4V VDS=5V 28 21 25 ID(A) ID (A) 30 3.5V 20 125°C 14 15 10 13.4 VGS=3V 22 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Figure 1: On-Region Characteristics 26 30.76 3.5 2.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 26 1.6 24 Normalized On-Resistance VGS=4.5V 22 RDS(ON) (mΩ) 16 25°C 7 20 18 16 VGS=10V 14 12 VGS=10V ID=9A 1.4 VGS=4.5V 1.2 ID=7A 1 10 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=9A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4932 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=9A 1250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 750 500 2 Coss 13.4 16 22 26 250 0 Crss 0 0 4 8 12 16 20 0 5 15 20 25 0.76 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 30 50 10µs 40 RDS(ON) limited 1.0 1ms 100µs Power (W) ID (Amps) 10.0 10ms DC TJ(Max)=150°C TA=25°C 0.1 1 10 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 20 0 0.0001 100 VDS (Volts) 10 TJ(Max)=150°C TA=25°C 10 0.0 0.1 30 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com