ROHM RR274EA

Data Sheet
Rectifier diodes
RR274EA-400
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
1.0 min.
0.8
2.9±0.1
＋0.1
0.4　－0.05 各リードとも同寸法
Each lead has same dimension
(4)
(2)
0.95
Construction
Silicon epitaxial planar
0.7±0.1
0.95
0.7
0.35 0.45
0～0.1
0.33±0.03
(3)
0.450.35
0.95
0.3～0.6
(1)
2.8±0.2
＋0.2
1.6 －0.1
0.05±0.04
2.4
(5)
Features
1) Small mold type. (TSMD5)
2) High reliability
0.16±0.1
0.06
TSMD5
0.95
1.9
0.85±0.1
1.9±0.2
1.0Max
Structure
ROHM : TSMD5
dot (year week factory) + day
Taping dimensions (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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IR
Limits
3.2±0.08
8.0±0.2
1.1±0.08
Unit
V
A
A
C
C
400
0.5
8
150
55 to 150
Min.
Typ.
Max.
Unit
-
-
1.1
V
-
-
10
uA
1/3
0～0.5
3.2±0.08
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VR
Reverse voltage (repetitive peak)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
φ1.1±0.1
4.0±0.1
3.2±0.08
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
Conditions
IF=0.5A
VR=400V
2011.06
Data Sheet
RR274EA-400
Electrical characteristic curves
1
100
0.1
Ta=125℃
Ta=150℃
0.01
Ta=25℃
Ta=150℃
Ta=125℃
10000
1000
Ta=75℃
100
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD CURRENT : I F(A)
Ta=75℃
REVERSE CURRENT : IR(nA)
100000
10
Ta=25℃
10
Ta=25℃
1
Ta=25℃
0.1
0.001
0
100
200
300
400
500
600
700
800
1
0
900 1000
100
200
300
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
930
920
AVE:922.1mV
910
250
200
150
100
AVE:19.27nA
14
12
6
4
IR DISPERSION MAP
Ct DISPERSION MAP
50
1cyc
8.3ms
60
50
40
AVE:16.5A
20
10
Ta=25℃
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
8
7
6
5
AVE:2.460us
4
3
2
PEAK SURGE
FORWARD CURRENT:I FSM(A)
9
REVERSE RECOVERY TIME:trr(us)
Ifsm
30
8
0
10
70
AVE:13.65pF
10
2
VF DISPERSION MAP
100
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
16
0
80
10
15
20
25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
18
50
90
5
20
Ta=25℃
VR=400V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
940
900
PEAK SURGE
FORWARD CURRENT : I FSM(A)
0
300
Ta=25℃
IF=1A
n=30pcs
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
950
400
Ifsm
40
8.3ms
8.3ms
1cyc
30
20
10
1
0
0
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Mounted on epoxy board
IM=10mA
IF=0.25A
1
1000
Ifsm
t
30
20
10
0
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
ｶﾞﾗｽｴﾎﾟｷｼ基板実装時
1ms time
Rth(j-a)
DC
0.8
300us
FORWARD POWER
DISSIPATION:Pf(W)
40
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
50
100
Rth(j-c)
10
D=1/2
0.6
Sin(θ＝180)
0.4
0.2
1
0.001
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
0
0.2
0.4
0.6
0.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
1
2011.06
Data Sheet
RR274EA-400
0.01
2
2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.008
0.006
Sin(θ＝180)
0.004
D=1/2
DC
0.002
t
0V
0
D=t/TVR
t
1.5
T
T
1
D=1/2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0A
D=t/T
VR=200V
Tj=150℃
DC
0.5
1.5
0A
Io
0V
VR
t
T
1
D=t/T
VR=200V
Tj=150℃
DC
D=1/2
0.5
Sin(θ＝180)
Sin(θ＝180)
0
0
100
200
300
400
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(℃)
Derating Curve (Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(℃)
Derating Curve (Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
20
15
AVE:15.2kV
10
5
AVE:6.60kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06
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Notes
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R1120A