2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A 0.5max PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V Tj 150 °C fT VCE=12V, IE=–2.0A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 165typ pF VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 20 10 10 –5 1 –2 1max 3max 0.5max 0 1 2 3 12 5˚ 0.5 1 5 –55˚C 10 5 10 18 5 1 0.5 t on tf 0.1 0.2 0.5 5 10 s 0µ 10 18 0.1 1 10 mp) e Te (Cas 1000 P c – T a Derating 130 50 100 Collector-Emitter Voltage V C E (V) 500 nk 10 si 0.03 5 at 500 he 0.1 0.05 ite 0.1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% fin 1 0.5 100 In Collecto r Cur rent I C (A) 5 0.05 Collector-Emitter Voltage V C E (V) 100 ith Without Heatsink Natural Cooling 100 mp) mp Te 0.5 W 1 0.5 50 1.2 Time t(ms) 10 5 10 1.0 s DC 10 0.8 1 Maxim um Power Dissi pation P C (W) 1m ms 0.6 2 50 10 Co lle ctor Cu rre nt I C ( A) 1 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 50 0.2 Collector Current I C (A) Collector Current I C (A) 0.03 5 t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 Transient Thermal Resistance t o n• t s tg • t f (µ s) Switching Ti me DC Cur rent Gain h FE 25˚C 1 0 Base-Emittor Voltage V B E (V) 10 0.5 ) 0 10 18 t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 se – (V C E =4V) 50 e Te C ˚ 55 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 (Ca 4 C V C E (sat) Collector-Emitter Voltage V C E (V) 5 0.02 8 (Cas ) Temp ˚C (Case 0 0.02 0.05 0.1 4 Collector Current I C (A) 125˚C θ j - a (˚C /W) 0 e Temp) 25˚C (Cas 12 –55˚C I B =100mA Temp) –55˚C (Case eT em p) 25 ˚C 200mA 4 V B E (sat) 1 as 400m A 8 16 (C 600mA (V CE =4V) 18 125 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) Collector Current I C (A) 12 1.4 E I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1.4 800 mA C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 1.2 A 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 16 2 3 5.45±0.1 RL (Ω) 1 .6 A ø3.2±0.1 1.05 +0.2 -0.1 VCC (V) 18 2.0±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b IB Tstg 15.6±0.4 9.6 25˚C IC 4.0 VEBO Symbol 1.8 Ratings ICBO 5.0±0.2 Conditions V 2.0 Unit 500 19.9±0.3 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 93