2SD2170 Transistors Medium Power Transistor (Motor, Relay drive) (90 +20 −10 , 2A) 2SD2170 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5 (1) (2) 3.0 0.5 (1) Base (2) Collector (3) Emitter 0.4 1.5 1.5 0.4 (3) ROHM : MPT3 EIAJ : SC-62 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation PC Junction temperature Storage temperature Unit V V V A (DC) A (Pulse) Limits 90 +20 −10 90 +20 −10 6 2 3 0.5 ∗1 2 ∗2 150 −55 to +150 Symbol Tj Tstg W °C °C ∗1 Single pulse Pw=10ms,Duty=1/2 ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. zPackaging specifications and hFE Type Package 2SD2170 MPT3 hFE 1k to 10k Marking DM Code Basic ordering unit (pieces) T100 1000 zEquivalent circuit C B R1 E : Emitter B : Base C : Collector R2 R1 R2 E 3.5kΩ 300 Ω zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 80 80 − − 110 110 V V IC=50µA IC=1mA Collector cutoff current ICBO − − 10 µA VCB=70V Emitter cutoff current IEBO − − 3 mA VCE(sat) − hFE 1.5 10000 V − fT 1000 − − − − 80 25 − − MHz Cob Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance pF Conditions VEB=5V ∗1 IC/IB=1A/1mA VCE=2V , IC=1A ∗1 VCE=5V , IE=−0.1A , f=30MHz ∗2 VCB=10V , IE=0A , f=1MHz ∗1 Measure using pulse current. ∗2 Transition frequency of the device. Rev.A 1/2 2SD2170 Transistors zElectrical characteristic curves 5 1.0mA 0.9mA 0.8mA 0.7mA 1.6 0.6mA 1.2 0.5mA 0.4mA 0.8 IB=0.3mA 0.4 10000 Ta=25°C Ta=25°C 5000 VCE=2V 2 1 DC CURRENT GAIN : hFE Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2.0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 VCE=4V 2V 2000 1000 500 200 100 50 0.002 0.001 0 1 2 3 5 4 0.2 1 2 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 COLLECTOR CURRENT : IC (A) 5 COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current 200 10 Ta=25°C f=1MHz IE=0A 100 1 50 C 0.5 0.5 20 3 2.5 D 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) IC/IB=1000 0.2 2 s∗ 1m ms ∗ 10 s∗ m 10 2 0.1 1.5 = Pw COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C 0.1 0.01 0.02 0.05 1 Fig.2 Grounded emitter propagation Fig.3 DC current gain vs. collector current characteristics Fig.1 Grounded emitter output characteristics 1 0.5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 5 0 IC (A) 0 0.1 20 0.01 10 5 0.1 0.5 1 2 5 10 20 50 Ta=25°C ∗Single Nonrepetitive Pulse 0.001 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) VCE (V) Fig.5 Collector output capacitance vs. collector-base voltage Fig.6 Safe operating area Rev.A 1000 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1