ROHM SST2907AT116

UMT2907A / SST2907A / MMST2907A
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A
zFeatures
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A.
zDimensions (Unit : mm)
UMT2907A
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3
R2F
T106
SST3
R2F
T116
SMT3
R2F
T146
3000
3000
3000
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
UMT2907A SST2907A MMST2907A
SST2907A
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
UMT2907A,
SST2907A,
Collector power
dissipation
MMST2907A
SST2907A
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
VCEO
−60
−60
−5
−0.6
V
V
V
A
0.2
W
0.35
150
−55 to +150
W
°C
°C
VEBO
IC
PC
Tj
Tstg
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
MMST2907A
∗
∗ Mounted on a 7 x 5 x 0.6mm ceramic substrate.
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCBO
BVCEO
−60
−60
−
−
BVEBO
−5
−
−
−
−
−
−
−100
V
V
V
−
−
−
−
−100
−100
−
−0.4
−
−
−
−1.6
−1.3
−2.6
−
−
−
−
−
−
−
300
−
−
−
−
−
8
MHz
pF
−
30
pF
−
50
ns
VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA
−
10
ns
VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA
Collector cutoff current
Emitter cutoff current
ICBO
ICES
IEBO
Collector-emitter saturation voltage
VCE(sat)
−
−
Base-emitter saturation voltage
VBE(sat)
−
−
75
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
hFE
fT
Cob
Cib
ton
td
tr
toff
tstg
tf
100
100
100
50
200
−
−
−
−
−
−
−
−
nA
nA
V
V
Conditions
IC= −10µA
IC= −10mA
IE= −10µA
VCB= −50V
VCB= −30V
VEB= −3V
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
VCE= −10V, IC= −0.1mA
VCE= −10V, IC= −1mA
−
VCE= −10V, IC= −10mA
VCE= −10V, IC= −150mA
VCE= −10V, IC= −500mA
VCE= −20V, IE=50mA, f=100MHz
VCB= −10V, f=100kHz
VEB= −2V, f=100kHz
−
40
ns
VCC= −30V, VBE(OFF)= −1.5V, IC=− 150mA, IB1= −15mA
−
−
−
100
80
30
ns
ns
ns
VCC= −30V, IC= −150mA, IB1=IB2= −15mA
VCC= −30V , IC= −150mA, IB1=IB2= −15mA
VCC= −30V, IC= −150mA, IB1=IB2= −15mA
Rev.B
1/4
UMT2907A / SST2907A / MMST2907A
Transistors
100
COLLECTOR CURRENT : IC (mA)
Ta=25˚C
600
500
400
50
300
200
100
1B=0µA
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : VCE (V)
BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V)
zElectrical characteristic curves
1.8
Ta=25˚C
IC / IB=10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Fig.1 Grounded emitter output
characteristics
0
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Base-emitter saturation
voltage vs. collector current
1000
DC CURRENT GAIN : hFE
Ta=25˚C
VCE=10V
100
10
0.1
1V
1.0
10
COLLECTOR CURRENT : IC (mA)
100
1000
Fig.3 DC current gain vs. collector current ( I )
1000
DC CURRENT GAIN : hFE
VCE=10V
Ta=125˚C
Ta=25˚C
100
Ta=−55˚C
10
0.1
1.0
10
COLLECTOR CURRENT : IC (mA)
100
1000
Fig.4 DC current gain vs. collector current ( II )
Rev.B
2/4
UMT2907A / SST2907A / MMST2907A
Transistors
1000
AC CURRENT GAIN : hFE
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE (sat) (V)
Ta=25˚C
VCE=10V
f=1kHz
100
10
COLLECTOR CURRENT : IC (mA)
100
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
BASE-EMITTER ON VOLTAGE : VBE(on) (V)
1.6
Ta=25˚C
VCE=10V
100
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Cib
10
Cob
100
1000
300MHz
200MHz
10
250MHz
1
200MHz
0.1
1
Fig.8 Gain bandwidth product
vs. collector current
1000
Ta=25˚C
IC / IB=10
TURN ON TIME : ton (ns)
CAPACITANCE (pF)
Ta=25˚C
f=1MHz
10
Ta=25˚C
100MHz
COLLECTOR CURRENT : IC (mA)
Fig.7 Grounded emitter propagation
characteristics
100
10
100
1000
COLLECTOR CURRENT : IC (mA)
100
1000
Ta=25˚C
VCE=10V
0
1.0
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.5 AC current gain vs. collector current
1.8
0.1
COLLECTOR-EMITTER VOLTAGE : VCE(V)
1.0
0.2
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.9 Gain bandwidth product
500
Ta=25˚C
VCC=30V
IC / IB=10
RISE TIME : tr (ns)
10
0.1
Ta=25˚C
IC / IB=10
0.3
100
VCC=30V
100
10V
10
1
0.1
10
1
10
REVERSE BIAS VOLTAGE (V)
Fig.10 Input/output capacitance
vs. voltage
100
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.11 Turn-on time vs.collector
current
5
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.12 Rise time vs. collector
current
Rev.B
3/4
UMT2907A / SST2907A / MMST2907A
Transistors
1000
100
10
1000
Ta=25˚C
VCC=30V
IC=10IB1=10IB2
FALL TIME : tf (ns)
STORAGE TIME : ts (ns)
Ta=25˚C
VCC=30V
IC=10IB1=10IB2
100
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.13 Storage time vs. collector
current
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.14 Fall time vs. collector
current
Rev.B
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0